HIT 2SK3212 Datasheet
2SK3212
Silicon N Channel MOS FET
High Speed Power Switching
Features
• Low on-resistance
RDS = 0.1 Ω typ.
• High speed switching
• 4 V gate drive device can be driven from 5 V source
Outline
ADE-208-752 (Z)
1st. Edition
February 1999
TO–220FM
G
D
1. Gate
2. Drain
1
2
3
S
3. Source
2SK3212
Absolute Maximum Ratings (Ta = 25°C)
Item Symbol Ratings Unit
Drain to source voltage V
Gate to source voltage V
Drain current I
Drain peak current I
Body-drain diode reverse drain current I
Avalanche current I
Avalanche energy E
Channel dissipation Pch
DSS
GSS
D
D(pulse)
DR
Note3
AP
Note3
AR
Note1
Note2
Channel temperature Tch 150 °C
Storage temperature Tstg –55 to +150 °C
Note: 1. PW ≤ 10 µs, duty cycle ≤ 1%
2. Value at Tc = 25°C
3. Value at Tch = 25°C, Rg ≥ 50 Ω
Electrical Characteristics (Ta = 25°C)
100 V
±20 V
10 A
40 A
10 A
10 A
10 mJ
20 W
Item Symbol Min Typ Max Unit Test Conditions
Drain to source breakdown voltage V
Gate to source breakdown voltage V
Gate to source leak current I
Zero gate voltege drain current I
Gate to source cutoff voltage V
Static drain to source on state R
resistance R
(BR)DSS
(BR)GSS
GSS
DSS
GS(off)
DS(on)
DS(on)
100 — — V ID = 10 mA, VGS = 0
±20——V I
= ±100 µA, VDS = 0
G
——±10 µAVGS = ±16 V, VDS = 0
——10µAVDS = 100 V, VGS = 0
1.0 — 2.5 V ID = 1 mA, VDS = 10 V
— 100 130 mΩ ID = 5 A, VGS = 10 V
— 130 180 mΩ ID = 5 A, VGS = 4 V
Forward transfer admittance |yfs| 4.5 7.5 — S ID = 5 A, VDS = 10 V
Input capacitance Ciss — 420 — pF VDS = 10 V
Output capacitance Coss — 185 — pF VGS = 0
Reverse transfer capacitance Crss — 100 — pF f = 1 MHz
Turn-on delay time t
Rise time t
Turn-off delay time t
Fall time t
Body–drain diode forward voltage V
Body–drain diode reverse
recovery time
t
d(on)
r
d(off)
f
DF
rr
— 12 — ns ID = 5 A, VGS = 10 V
— 60 — ns RL = 10 Ω
— 105 — ns
—70—ns
— 0.9 — V IF = 10 A, VGS = 0
— 90 — ns IF = 10 A, VGS = 0
diF/ dt = 50 A/ µs
Note: 4. Pulse test
Note4
Note4
Note4
2
Main Characteristics
2SK3212
Power vs. Temperature Derating
40
30
20
10
Channel Dissipation Pch (W)
0
50 100 150 200
Case Temperature Tc (°C)
Typical Output Characteristics
10
10 V
8
6 V
D
6
4 V
Pulse Test
3.5 V
100
Maximum Safe Operation Area
50
20
D
10
5
PW =10 ms (1shot)
DC Operation (Tc = 25°C)
2
1
Drain Current I (A)
Operation in
0.5
this area is
limited by R
0.2
Ta = 25 °C
0.1
12 5
DS(on)
Drain to Source Voltage V (V)
Typical Transfer Characteristics
10
V = 10 V
DS
Pulse Test
8
D
6
1 ms
10 20
10 µs
100 µs
50
DS
100
200
4
Drain Current I (A)
2
0
246810
Drain to Source Voltage V (V)
3 V
V =2.5 V
GS
DS
4
Drain Current I (A)
2
0
Tc = 75°C
12345
Gate to Source Voltage V (V)
–25°C
25°C
GS
3
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