HIT 2SK3209 Datasheet
2SK3209
Silicon N Channel MOS FET
High Speed Power Switching
Features
• Low on-resistance
RDS =35mΩ typ.
• High speed switching
• 4V gate drive device can be driven from 5V source
Outline
ADE-208-759(Z)
Target Specification
1st. Edition
December 1998
TO–220FM
G
D
1. Gate
2. Drain
1
2
3
S
3. Source
2SK3209
Absolute Maximum Ratings (Ta = 25°C)
Item Symbol Ratings Unit
Drain to source voltage V
Gate to source voltage V
Drain current I
Drain peak current I
Body-drain diode reverse drain current I
Avalanche current I
Avalanche energy E
Channel dissipation Pch
DSS
GSS
D
D(pulse)
DR
Note3
AP
Note3
AR
Note1
Note2
Channel temperature Tch 150 °C
Storage temperature Tstg –55 to +150 °C
Note: 1. PW ≤ 10µs, duty cycle ≤ 1 %
2. Value at Tc = 25°C
3. Value at Tch = 25°C, Rg ≥ 50Ω
Electrical Characteristics (Ta = 25°C)
150 V
±20 V
25 A
100 A
25 A
25 A
46 mJ
35 W
Item Symbol Min Typ Max Unit Test Conditions
Drain to source breakdown voltage V
Gate to source breakdown voltage V
Gate to source leak current I
Zero gate voltege drain current I
Gate to source cutoff voltage V
Static drain to source on state R
resistance R
(BR)DSS
(BR)GSS
GSS
DSS
GS(off)
DS(on)
DS(on)
150 — — V ID = 10mA, VGS = 0
±20——V I
= ±100µA, VDS = 0
G
——±10 µAVGS = ±16V, VDS = 0
——10µAVDS = 150 V, VGS = 0
1.0 — 2.5 V ID = 1mA, VDS = 10V
— 0.035 0.045 Ω ID =15A, VGS = 10V
— 0.042 0.063 Ω ID =15A, VGS = 4V
Forward transfer admittance |yfs|1830—S ID =15A, VDS = 10V
Input capacitance Ciss — 2600 — pF VDS = 10V
Output capacitance Coss — 820 — pF VGS = 0
Reverse transfer capacitance Crss — 350 — pF f = 1MHz
Turn-on delay time t
Rise time t
Turn-off delay time t
Fall time t
Body–drain diode forward voltage V
Body–drain diode reverse
recovery time
t
d(on)
r
d(off)
f
DF
rr
— 25 — ns ID =15A, VGS = 10V
— 180 — ns RL = 2Ω
— 600 — ns
— 280 — ns
— 0.95 — V IF = 25A, VGS = 0
— 100 — ns IF = 25A, VGS = 0
diF/ dt =50A/µs
Note: 4. Pulse test
Note4
Note4
Note4
2
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