HIT 2SK3207 Datasheet
2SK3207
Silicon N Channel MOS FET
High Speed Power Switching
Features
• Low on-resistance
RDS = 70 mΩ typ.
• High speed switching
• 4V gate drive device can be driven from 5V source
Outline
ADE-208-758A(Z)
Target Specification 2nd. Edition
Feb 1999
TO–220FM
G
D
1. Gate
2. Drain
1
2
3
S
3. Source
2SK3207
Absolute Maximum Ratings (Ta = 25°C)
Item Symbol Ratings Unit
Drain to source voltage V
Gate to source voltage V
Drain current I
Drain peak current I
Body-drain diode reverse drain current I
Avalanche current IAP*
Avalanche energy EAR*
Channel dissipation Pch*
DSS
GSS
D
D(pulse)
DR
1
*
3
3
2
Channel temperature Tch 150 °C
Storage temperature Tstg –55 to +150 °C
Note: 1. PW ≤ 10µs, duty cycle ≤ 1 %
2. Value at Tc = 25°C
3. Value at Tch = 25°C, Rg ≥ 50Ω
150 V
±20 V
18 A
72 A
18 A
18 A
24 mJ
35 W
2
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