HIT 2SK3163 Datasheet

2SK3163

Silicon N Channel MOS FET
High Speed Power Switching

Features

• Low on-resistance

R

= 6 mΩ typ.

DS(on)

• Low drive current

• 4 V gate drive device can be driven from 5 V source

Outline

ADE-208-736A (Z)

2nd Edition

February 1999

TO–3P

G

D

1. Gate

1

S

2

3

2. Drain
(Flange)

3. Source

2SK3163

Absolute Maximum Ratings (Ta = 25°C)

Item Symbol Ratings Unit

Drain to source voltage V
Gate to source voltage V
Drain current I
Drain peak current I
Body-drain diode reverse drain current I
Avalanche current I
Avalanche energy E
Channel dissipation Pch

DSS

GSS

D

D(pulse)

DR

Note 3

AP

Note 3

AR

Note 2

Note 1

Channel temperature Tch 150 °C
Storage temperature Tstg –55 to +150 °C

Note: 1. PW ≤ 10 µs, duty cycle ≤ 1%

2. Value at Tc = 25°C

3. Value at Tch = 25°C, Rg ≥ 50 Ω

60 V
±20 V
75 A
300 A
75 A
50 A
214 mJ
110 W

2

2SK3163

Electrical Characteristics (Ta = 25°C)

Item Symbol Min Typ Max Unit Test Conditions

Drain to source breakdown

V

(BR)DSS

60——V I

voltage
Gate to source leak current I
Zero gate voltege drain

GSS

I

DSS

——±0.1 µAV
——10µAV

current
Gate to source cutoff voltage V

Static drain to source on state R

GS(off)

DS(on)

1.0 — 2.5 V ID = 1 mA, VDS = 10 V

— 6.0 7.5 mΩ ID = 40 A, VGS = 10 V
resistance — 8.0 12 mΩ ID = 40 A, VGS = 4 V
Forward transfer admittance |yfs|5080—SI
Input capacitance Ciss — 7100 — pF VDS = 10 V
Output capacitance Coss — 1000 — pF VGS = 0
Reverse transfer capacitance Crss — 280 — pF f = 1 MHz
Total gate charge Qg — 125 — nc VDD = 25 V
Gate to source charge Qgs — 25 — nc VGS = 10 V
Gate to drain charge Qgd — 25 — nc ID = 75 A
Turn-on delay time t
Rise time t
Turn-off delay time t
Fall time t
Body–drain diode forward

V

d(on)

r

d(off)

f

DF

— 60 — ns VGS = 10 V, ID = 40 A

— 300 — ns RL = 0.75 Ω

— 520 — ns

— 330 — ns

— 1.05 — V IF = 75 A, VGS = 0
voltage

Body–drain diode reverse

t

rr

— 90 — ns IF = 75 A, VGS = 0
recovery time

Note: 1. Pulse test

= 10 mA, VGS = 0

D

= ±20 V, VDS = 0

GS

= 60 V, VGS = 0

DS

1

= 40 A, VDS = 10 V

D

diF/ dt = 50 A/ µs

Note

Note 1

Note 1

Note 1

3

2SK3163

Main Characteristics

200

Power vs. Temperature Derating

150

100

50

Channel Dissipation Pch (W)

0

50 100 150 200

Case Temperature Tc (°C)

Typical Output Characteristics

100

V = 10 V

GS

5 V

80

4 V

Pulse Test

3.5 V

1000

Maximum Safe Operation Area

300
100

D

30

(Tc = 25°C)

10

Operation in

3

this area is

Drain Current I (A)

limited by R

1

DS(on)

0.3
Ta = 25°C

0.1

0.1 0.3 1
Drain to Source Voltage V (V)

Typical Transfer Characteristics

100

V = 10 V

DS

Pulse Test

80

PW = 10 ms (1 shot)

DC Operation

3

10

100 µs

1 ms

DS

10 µs

30

100

D

60

40

Drain Current I (A)

20

0

Drain to Source Voltage V (V)

4

3 V

2.5 V

246810

DS

D

60

40

Drain Current I (A)

20

0

75°C

12345

Gate to Source Voltage V (V)

25°C

Tc = –25°C

GS

2SK3163

Drain to Source Saturation Voltage vs.

Gate to Source Voltage

2.0
Pulse Test

1.6

DS(on)

V (V)

1.2

0.8

0.4

Drain to Source Saturation Voltage

10 A

0

48

Gate to Source Voltage V (V)

I = 50 A

D

20 A

12

16 20

GS

Static Drain to Source on State Resistance

vs. Temperature

20

Ω

Pulse Test

16

DS(on)

R (m )

12

4 V

8

4

I = 50 A

D

V = 10 V

GS

20 A

10 A

10, 20, 50 A

0

Static Drain to Source on State Resistance

–50 0 50 100 150 200

Case Temperature Tc (°C)

Static Drain to Source on State Resistance

vs. Drain Current

100

Ω

50

DS(on)

20

R (m )

10

5

2

Drain to Source On State Resistance

1

1

2

V = 4 V

GS

10 V

10

Drain Current I (A)

Pulse Test

20 100

D

Forward Transfer Admittance vs.

Drain Current

500

V = 10 V

200

fs

DS

Pulse Test

100

50

Tc = –25 °C

20
10

5
2

25 °C

75 °C

1

Forward Transfer Admittance |y | (S)

0.5

0.1 0.3 1 3 10 30 100
Drain Current I (A)

D

505

200

5

2SK3163

Body–Drain Diode Reverse

Recovery Time

1000

500

200

100

50

20

Reverse Recovery Time trr (ns)

10

di / dt = 50 A / µs
V = 0, Ta = 25 °C

GS

0.1 0.3 1 3 10 30 100
Reverse Drain Current I (A)

DR

Typical Capacitance vs.
Drain to Source Voltage

30000

10000

3000

1000

Capacitance C (pF)

300

100

01020304050

Drain to Source Voltage V (V)

Ciss

Coss

Crss

V = 0

GS

f = 1 MHz

DS

100

I = 75 A

D

V

CE

80

60

GE

V = 50 V

CC

25 V
10 V

40

Dynamic Input Characteristics

20

V = 50 V

CC

25 V

Collector to Emitter Voltage V (V)

0

80 160 240 320 400

10 V

V

CE

Gate Charge Qg (nc)

20

1000

Switching Characteristics

500

16

GE

200

12

100

8

4

50

Switching Time t (ns)

20

Gate to Emitter Voltage V (V)

0

10

0.1 0.2

0.5
Drain Current I (A)

t

d(off)

t

f

t

r

t

d(on)

V = 10 V, V = 30 V

GS

DD

PW = 5 µs, duty < 1 %

10 100

20

2

1

5

D

50

6

2SK3163

Reverse Drain Current vs.

Source to Drain Voltage

100

10 V

80

F

5 V

60

V = 0, –5 V

GS

40

20

Reverse Drain Current I (A)

0

0.4 0.8 1.2 1.6 2.0

Source to Drain Voltage V (V)

Pulse Test

SDF

Maximum Avalanche Energy vs.

Channel Temperature Derating

250

I = 50 A

AP

V = 25 V

AR

200

DD

duty < 0.1 %
Rg > 50

Ω

150

100

50

0

Repetitive Avalanche Energy E (mJ)

25 50 75 100 125 150

Channel Temperature Tch (°C)

Vin
15 V

Avalanche Test Circuit Avalanche Waveform

V

DSS

V – V

DSS DD

AR

1

2

V

DS

L

E = • L • I •

AP

2

Monitor

I

AP

Monitor

I

Rg

D. U. T

V

DD

AP

V

I

D

50Ω

V

DD

0

V

DS

(BR)DSS

7

2SK3163

3

Normalized Transient Thermal Impedance vs. Pulse Width

s (t)

1

γ

D = 1

0.5

0.3

0.2

0.1

0.1

0.05

0.03
Normalized Transient Thermal Impedance

0.02

0.01

1shot pulse

0.01
10 µ

100 µ 1 m 10 m 100 m 1 10

Pulse Width PW (S)

Tc = 25°C

θ γ θ

ch – c(t) = s (t) • ch – c

θ

ch – c = 1.14 °C/W, Tc = 25 °C

P

DM

PW

T

D =

PW

T

Switching Time Test Circuit Waveform

R

L

V

DD

= 30 V

Vout
Monitor

Vin

Vout

td(on)

10%

10%

90%

tr

90%

td(off)

90%

10%

t

f

Vin Monitor

Vin
10 V

D.U.T.

50Ω

8

Package Dimensions

16.0 max

0.5 typ

φ

3.2 ± 0.2

1.0 typ

2SK3163

Unit: mm

5.0 max

1.5 typ

5.0 ± 0.3

1.6 typ

1.4 max

3.6 typ

5.45 ± 0.2 5.45 ± 0.2

2.0 typ

2.0 typ

1.0 ± 0.2

0.9 typ

1.0 typ

20.1 max18.0 ± 0.5

14.9 ± 0.2

0.3 typ

2.8 typ

0.6 ± 0.2

Hitachi Code

EIAJ

JEDEC

TO–3P

SC–65

—

9

2SK3163

Cautions

1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent, copyright,
trademark, or other intellectual property rights for information contained in this document. Hitachi bears no
responsibility for problems that may arise with third party’s rights, including intellectual property rights, in
connection with use of the information contained in this document.

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received the latest product standards or specifications before final design, purchase or use.

3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However, contact
Hitachi’s sales office before using the product in an application that demands especially high quality and
reliability or where its failure or malfunction may directly threaten human life or cause risk of bodily injury,
such as aerospace, aeronautics, nuclear power, combustion control, transportation, traffic, safety equipment
or medical equipment for life support.

4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly for
maximum rating, operating supply voltage range, heat radiation characteristics, installation conditions and
other characteristics. Hitachi bears no responsibility for failure or damage when used beyond the guaranteed
ranges. Even within the guaranteed ranges, consider normally foreseeable failure rates or failure modes in
semiconductor devices and employ systemic measures such as fail-safes, so that the equipment incorporating
Hitachi product does not cause bodily injury, fire or other consequential damage due to operation of the
Hitachi product.

5. This product is not designed to be radiation resistant.

6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without
written approval from Hitachi.

7. Contact Hitachi’s sales office for any questions regarding this document or Hitachi semiconductor products.

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10

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