HIT 2SK3163 Datasheet

2SK3163

Silicon N Channel MOS FET

High Speed Power Switching

ADE-208-736A (Z)

2nd Edition

February 1999

Features

• Low on-resistance

R

DS(on)

= 6 mΩ typ.

• Low drive current

• 4 V gate drive device can be driven from 5 V source

Outline

TO–3P

1. Gate

2. Drain

(Flange)

3. Source

1

2

3

D

S

G

2SK3163

2

Absolute Maximum Ratings (Ta = 25°C)

Item Symbol Ratings Unit

Drain to source voltage V

DSS

60 V

Gate to source voltage V

GSS

±20 V

Drain current I

D

75 A

Drain peak current I

D(pulse)

Note 1

300 A

Body-drain diode reverse drain current I

DR

75 A

Avalanche current I

AP

Note 3

50 A

Avalanche energy E

AR

Note 3

214 mJ

Channel dissipation Pch

Note 2

110 W

Channel temperature Tch 150 °C

Storage temperature Tstg –55 to +150 °C

Note: 1. PW ≤ 10 µs, duty cycle ≤ 1%

2. Value at Tc = 25°C

3. Value at Tch = 25°C, Rg ≥ 50 Ω

2SK3163

3

Electrical Characteristics (Ta = 25°C)

Item Symbol Min Typ Max Unit Test Conditions

Drain to source breakdown

voltage

V

(BR)DSS

60——V I

D

= 10 mA, V

GS

= 0

Gate to source leak current I

GSS

——±0.1 µAV

GS

= ±20 V, V

DS

= 0

Zero gate voltege drain

current

I

DSS

——10µAV

DS

= 60 V, V

GS

= 0

Gate to source cutoff voltage V

GS(off)

1.0 — 2.5 V I

D

= 1 mA, V

DS

= 10 V

Note

1

Static drain to source on state R

DS(on)

— 6.0 7.5 mΩ I

D

= 40 A, V

GS

= 10 V

Note 1

resistance — 8.0 12 mΩ I

D

= 40 A, V

GS

= 4 V

Note 1

Forward transfer admittance |y

fs

|5080—SI

D

= 40 A, V

DS

= 10 V

Note 1

Input capacitance Ciss — 7100 — pF V

DS

= 10 V

Output capacitance Coss — 1000 — pF V

GS

= 0

Reverse transfer capacitance Crss — 280 — pF f = 1 MHz

Total gate charge Qg — 125 — nc V

DD

= 25 V

Gate to source charge Qgs — 25 — nc V

GS

= 10 V

Gate to drain charge Qgd — 25 — nc I

D

= 75 A

Turn-on delay time t

d(on)

— 60 — ns V

GS

= 10 V, I

D

= 40 A

Rise time t

r

— 300 — ns R

L

= 0.75 Ω

Turn-off delay time t

d(off)

— 520 — ns

Fall time t

f

— 330 — ns

Body–drain diode forward

voltage

V

DF

— 1.05 — V I

F

= 75 A, V

GS

= 0

Body–drain diode reverse

recovery time

t

rr

— 90 — ns I

F

= 75 A, V

GS

= 0

diF/ dt = 50 A/ µs

Note: 1. Pulse test