Zetex (Now Diodes) FMMT5088, FMMT5089 Schematic [ru]
SOT23 NPN SILICON PLANAR
SMALL SIGNAL TRANSISTORS
ISSUE 2 - SEPTEMBER 1995
FMMT5088
FMMT5089
PARTMARKING DETAIL FMMT5088 - 1Q
FMMT5089 - 1R
C
COMPLEMENTARY TYPES FMMT5088 - FMMT5087
FMMT5089 - None Available
B
ABSOLUTE MAXIMUM RATINGS.
PARAMETER SYMBOL FMMT5088 FMMT5089 UNIT
Collector-Base Voltage V
Collector-Emitter Voltage V
Emitter-Base Voltage V
Continuous Collector Current I
Power Dissipation at T
=25°C P
amb
Operating and Storage Temperature Range T
ELECTRICAL CHARACTERISTICS (at T
CBO
CEO
EBO
C
tot
j:Tstg
amb
= 25°C).
FMMT5088 FMMT5089
PARAMETER SYMBOL MIN. MAX. MIN. MAX. UNIT CONDITIONS.
Collector-Base
Breakdown Voltage
Collector-Emitter
Breakdown Voltage
Collector- Base
Cut-Off Current
Emitter-Base Current I
Emitter Saturation
Voltages
Static Forward
Current Transfer
Ratio
Transition
Frequency
Output Capacitance C
Emitter-base
Capacitance
V
(BR)CBO
V
(BR)CEO
I
CBO
EBO
V
CE(sat)
V
BE(sat)
h
FE
f
T
obo
C
ebo
35 25 V IC=1mA, IB=0
30 30 V
50
50
0.5
0.8
900 400
300
350
300
450
400
50 50 MHz
44pFV
10 10 pF VBE=0.5V, f=1MHz,
Noise Figure N 3 2 dB I
Small Signal Current
Transfer Ratio
h
fe
*Measured under pulsed conditions. Pulse width=300
350 1400 450 1800 IC=1mA, VCE=5V
µs. Duty cycle ≤2% ++ Periodic Sample test Only
Spice parameter data is available upon request for this device
35 30 V
30 25 V
4.5 4.5 V
50 50 mA
330 330 mW
-55 to +150 °C
=100µA,I
I
C
VCB=20V, IE=0
50nAnA
100nAnA
V
=15V, IE=0
CB
V
EB(off)
V
EB(off)
=3V, IC=0
=4.5V, IC=0
0.5
=10mA, IB=1mA
I
0.8VV
1200
C
I
=100µA, V
C
=1mA, VCE=5V
I
C
I
=10mA, VCE=5V
C
=500µA, V
I
C
f=20MHz
=5V, f=1MHz, IE=0
CB
=0
I
C
=200mA, VCE=5V,
C
=10KΩ, f=10Hz to
R
g
15KHz
f=1KHz ++
E
=0*
CE
CE
=5V
=5V
E
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