Zetex (Now Diodes) FMMT2484 Schematic [ru]
SOT23 NPN SILICON PLANAR
SMALL SIGNAL TRANSISTOR
ISSUE 2 MARCH 94 ✪
FEATURES
* 60 Volt V
PARTMARKING DETAIL 4G
CEO
FMMT2484
C
E
B
ABSOLUTE MAXIMUM RATINGS.
SOT23
PARAMETER SYMBOL VALUE UNIT
Collector-Base Voltage V
Collector-Emitter Voltage V
Emitter-Base Voltage V
Peak Pulse Current I
Continuous Collector Current I
Power Dissipation at T
=25°C P
amb
Operating and Storage Temperature Range T
ELECTRICAL CHARACTERISTICS (at T
amb
CBO
CEO
EBO
CM
C
tot
j:Tstg
= 25°C unless otherwise stated).
60 V
60 V
6V
200 mA
50 mA
330 mW
-55 to +150 °C
PARAMETER SYMBOL MIN. MAX. UNIT CONDITIONS.
Collector-Base
Breakdown Voltage
Collector-Emitter
Breakdown Voltage
Emitter-Base
Breakdown Voltage
Collector Cut-Off Current I
Emitter Cut-Off Current I
Collector-Emitter
Saturation Voltage
Base-Emitter Voltage V
Static Forward
Current Transfer
Ratio
Output Capacitance C
Input Capacitance C
Noise Figure N 3 dB
*Measured under pulsed conditions. Pulse width=300
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
CBO
EBO
V
CE(sat)
BE
h
FE
obo
ibo
60 V
=10µA, I
I
C
=0
E
60 V IC=10mA, IB=0*
6V
10
10
nA
µA
=10µA, I
I
E
V
=45V, IE=0
CB
=45V, IE=0, T
V
CB
=0
C
10 nA VBE=5V
0.35 V
=1mA, I
I
C
=100µA*
B
0.95 V IC=1mA, VCE=5V*
30
100
20
175
200
250
500
800
6pFV
6pFV
3dB
µs. Duty cycle ≤ 2%
I
=1µA, V
C
=10µA, V
I
C
=10µA, V
I
C
=100µA, V
I
C
I
=500µA, V
C
=1mA, VCE=5V*
I
C
=10mA, VCE=5V*
I
C
CB
BE
=200µA, V
I
C
f=1kHz, f=200Hz
=200µA, V
I
C
f=30Hz to 15kHz at -3dB points
=5V*
CE
=5V*
CE
=5V, T
CE
CE
CE
=5V, IE=0, f=140KHz
=0.5V, IE=0, f=140KHz
CE
CE
amb
=5V*
=5V*
=5V, R
=5V, R
=150°C
amb
=55°C
=2kΩ
g
=2kΩ
g
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