SANYO DTA8E-N, DTA8C-N, DTA8G-N Datasheet

Ordering number : EN1877C

Silicon Planar Type

DTC8-N

8A Bidirectional Thyristor

Features

•Peak OFF-state voltage : 200 to 600V

•RMS ON-state current : 8A

•TO-220 package.

Absolute Maximum Ratings at Ta=25°C			DTC8C-N	DTC8E-N DTC8G-N			unit
Repetitive Peak	VDRM		200		400	600	V
OFF-StateVoltage			→		→
RMS ON-State Current	IT(RMS)	Tc=105°C, single-phase				8	A
		full-wave	→		→
Surge ON-State Current	ITSM	Peak 1 cycle, 50Hz				80	A
Amperes Squared-Seconds	∫i2T·dt	1ms≤ t≤ 10ms	→		→	32	A2s
Peak Gate Power Dissipation	PGM	f≥50Hz, duty≤ 10%	→		→	5	W
Average Gate Power Dissipation	PG(AV)		→		→	0.5	W
Peak Gate Current	IGM	f≥50Hz, duty≤ 10%	→		→	±2	A
Peak Gate Voltage	VGM	f≥50Hz, duty≤ 10%	→		→	±10	V
Junction Temperature	Tj		→		→	125	°C
Strage Temperature	Tstg				→ –40 to +125		°C
Weght			→		→	1.8	g
Electrical Characteristics at Ta=25°C				min	typ	max	unit
Repetitive Peak	IDRM	Tj=125°C, VD=VDRM				2	mA
OFF-State Current
Peak ON-State Voltage	VTM	ITM=12A				1.5	V
Critical Rate of Rise of	dv/dt	Tj=125°C, VD=200V (C),		10			V/µs
OFF-State Voltage		400V (E to G)
Holding Current	IH	RL=100Ω				50	mA
Gate Trigger Current* (I)	IGT	VD=12V, RL=20Ω				30	mA
(II)	IGT	VD=12V, RL=20Ω				30	mA
(III)	IGT	VD=12V, RL=20Ω				50	mA
(IV)	IGT	VD=12V, RL=20Ω				30	mA
Gate Trigger Voltage* (I)	VGT	VD=12V, RL=20Ω				2	V
(II)	VGT	VD=12V, RL=20Ω				2	V
(III)	VGT	VD=12V, RL=20Ω				2	V
(IV)	VGT	VD=12V, RL=20Ω				2	V
Gate Nontrigger Voltage	VGD	Tc=125°C, VD=VDRM		0.2			V
Thermal Resistance	Rth(j-c)	Between junction and case, AC				2	°C/W

Package Dimensions 1155A

* : The gate trigger mode is shown below.					(unit : mm)
	Trigger mode	T2	T1	G
	I	+	–	+
	II	+	–	–
	III	–	+	+
	IV	–	+	–

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TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110 JAPAN

O0797GI/3109MO, TS No.1877-1/3