SANYO DTA6G-N, DTA6E-N, DTA6C-N Datasheet

Ordering number : EN1874C

Silicon Planar Type

DTA6-N

6A Bidirectional Thyristor

Features

•Peak OFF-state voltage : 200 to 600V

•RMS ON-state current : 6A

•TO-220 package.

Absolute Maximum Ratings at Ta=25°C				DTA6C-N	DTA6E-N DT6AG-N			unit
Repetitive Peak		VDRM		200		400	600	V
OFF-StateVoltage				→		→
RMS ON-State Current		IT(RMS)	Tc=104°C, single-phase				6	A
			full-wave	→		→
Surge ON-State Current		ITSM	Peak 1 cycle, 50Hz				60	A
Amperes Squared-Seconds		∫i2T·dt	1ms≤ t≤ 10ms	→		→	18	A2s
Peak Gate Power Dissipation		PGM	f≥50Hz, duty≤ 10%	→		→	5	W
Average Gate Power Dissipation		PG(AV)		→		→	0.5	W
Peak Gate Current		IGM	f≥50Hz, duty≤ 10%	→		→	±2	A
Peak Gate Voltage		VGM	f≥50Hz, duty≤ 10%	→		→	±10	V
Junction Temperature		Tj		→		→	125	°C
Strage Temperature		Tstg				→ –40 to +125		°C
Weght				→		→	1.8	g
Electrical Characteristics at Ta=25°C					min	typ	max	unit
Repetitive Peak		IDRM	Tj=125°C, VD=VDRM				2	mA
OFF-State Current
Peak ON-State Voltage		VTM	ITM=9A				1.5	V
Critical Rate of Rise of		dv/dt	Tj=125°C, VD=200V (C),		10			V/µs
OFF-State Voltage			400V (E to G)
Holding Current		IH	RL=100Ω				50	mA
Gate Trigger Current	(I)	IGT	VD=12V, RL=20Ω				30	mA
	(II)	IGT	VD=12V, RL=20Ω				30	mA
	(III)	IGT	VD=12V, RL=20Ω				50	mA
	(IV)	IGT	VD=12V, RL=20Ω				30	mA
Gate Trigger Voltage	(I)	VGT	VD=12V, RL=20Ω				2	V
	(II)	VGT	VD=12V, RL=20Ω				2	V
	(III)	VGT	VD=12V, RL=20Ω				2	V
	(IV)	VGT	VD=12V, RL=20Ω				2	V
Gate Nontrigger Voltage		VGD	Tc=125°C, VD=Rated voltage		0.2			V
Thermal Resistance		Rth(j-c)	Between junction and case, AC				2	°C/W

					Package Dimensions 1155A
* : The gate trigger mode is shown below.					(unit : mm)
	Trigger mode	T2	T1	G
	I	+	–	+
	II	+	–	–
	III	–	+	+
	IV	–	+	–

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TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110 JAPAN

O0797GI/3109MO, TS No.1874-1/3