SANYO DZB9.1C, DZB8.2C, DZB7.5C, DZB6.8C, DZB30C Datasheet

Ordering number :EN653F

				DZB6.2 to DZB30
				Sillicon Diffused Junction Type
				1.0W Zener Diodes
	Features		Package Dimensions
	· Plastic molded structure.		unit:mm
	· Voltage regulator use.		1083
	· Power dissipation:P=1.0W.
				[DZB6.2 to DZB30]
	· Zener voltage:V=6.2 to 30V
	Z

A:Anode

Specifications

Absolute Maximum Ratings at Ta = 25˚C

Parameter	Symbol	Conditions	Ratings	Unit
Power Dissipation	P		1.0	W
Junction Temperature	Tj		150	˚C
Storage Temperature	Tstg		–40 to +150	˚C

Electrical Characteristics at Ta = 25˚C

Type No.			Zener Characteristics			Forward Voltage Drop		Reverse Current
		Zener Voltage		Dynamic	Measured		Measured		Measured
		VZ		Resistance
					Current	VF	Current	IR	Voltage
		[V]		[Ω]	IZ	[V]	[A]	[ A]	[V]
	typ	min	max	max	[mA]	max		max
DZB6.2U	6.2	5.60	6.80	60	–10	2	0.2	–10	–2.0
6.8C	6.8	6.45	7.14	60	–10	2	0.2	–10	–3.0
7.5C	7.5	7.13	7.81	30	–10	2	0.2	–10	–4.5
8.2C	8.2	7.79	8.61	30	–10	2	0.2	–10	–4.9
9.1C	9.1	8.65	9.55	30	–10	2	0.2	–10	–5.5
10C	10	9.50	10.50	30	–10	2	0.2	–10	–6.0
11C	11	10.50	11.50	30	–10	2	0.2	–10	–7.0
12C	12	11.40	12.60	30	–10	2	0.2	–10	–8.0
13C	13	12.40	13.60	30	–10	2	0.2	–10	–9.0
15C	15	14.30	15.80	30	–10	2	0.2	–10	–10.0
16C	16	15.20	16.80	30	–10	2	0.2	–10	–11.0
18C	18	17.10	18.90	30	–10	2	0.2	–10	–13.0
20C	20	19.00	21.00	30	–10	2	0.2	–10	–14.0
22C	22	20.90	23.10	30	–10	2	0.2	–10	–16.0
24C	24	22.80	25.20	30	–10	2	0.2	–10	–17.0
27C	27	25.70	28.30	30	–10	2	0.2	–10	–19.0
30C	30	28.50	31.50	30	–10	2	0.2	–10	–21.0

SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquarters

TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN

33098HA (KT)/13196GI/2089TA/1199MO/9205KI, TS No.653-1/2