Panasonic XP04114 Datasheet

Composite Transistors

XP4114

Silicon PNP epitaxial planer transistor

For switching/digital circuits

■ Features

●Two elements incorporated into one package. (Transistors with built-in resistor)

●Reduction of the mounting area and assembly cost by one half.

■ Basic Part Number of Element

● UN1114 × 2 elements

■ Absolute Maximum Ratings (Ta=25˚C)

	Parameter		Symbol	Ratings	Unit
Rating		Collector to base voltage	VCBO	–50	V
		Collector to emitter voltage	VCEO	–50	V
of
element		Collector current	I	–100	mA
			C
		Total power dissipation	PT	150	mW
Overall		Junction temperature	Tj	150	˚C
		Storage temperature	Tstg	–55 to +150	˚C

■ Electrical Characteristics (Ta=25˚C)

Unit: mm

	2.1±0.1		±0.05
0.425	1.25±0.1	0.425
			0.2

0.1		0.65			1		6
±
2.0		0.65			2		5
					3		4
		0.2
															+0.05
0.90.1±		0.7±0.1													–0.020.12
										to 0.1					0.2		±0.1
							0
1 : Emitter (Tr1)							4 : Emitter (Tr2)
2 : Base (Tr1)							5 : Base (Tr2)
3 : Collector (Tr2)							6 : Collector (Tr1)
							EIAJ : SC–88
							S–Mini Type Package (6–pin)

Marking Symbol: BK

Internal Connection

1	Tr1
	6
2	5
3	4
	Tr2

Parameter	Symbol		Conditions	min	typ	max	Unit
Collector to base voltage	VCBO	IC = –10µA, IE = 0		–50			V
Collector to emitter voltage	V	I = –2mA, I = 0		–50			V
	CEO	C	B
Collector cutoff current	ICBO	VCB = –50V,EI = 0				– 0.1	µA
	ICEO	VCE = –50V,BI = 0				– 0.5	µA
Emitter cutoff current	I	V = –6V, I = 0				– 0.2	mA
	EBO	EB	C
Forward current transfer ratio	h	V	= –10V, I = –5mA	80
	FE	CE	C
Collector to emitter saturation voltage	V	I = –10mA, I = – 0.3mA				– 0.25	V
	CE(sat)	C	B
Output voltage high level	VOH	VCC = –5V, VB = – 0.5V, RL = 1kΩ		–4.9			V
Output voltage low level	VOL	VCC = –5V, VB = –2.5V, RL = 1kΩ				– 0.2	V
Transition frequency	f	V	= –10V, I = 1mA, f = 200MHz		80		MHz
	T	CB	E
Input resistance	R1			–30%	10	+30%	kΩ
Resistance ratio	R1/R2			0.17	0.21	0.25

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