Panasonic XN04503 Datasheet

Composite Transistors

XN4503

Silicon NPN epitaxial planer transistor

For amplification of low frequency output

■ Features

●Two elements incorporated into one package.

●Reduction of the mounting area and assembly cost by one half.

■ Basic Part Number of Element

● 2SD813 × 2 elements

■ Absolute Maximum Ratings (Ta=25˚C)

	Parameter		Symbol	Ratings	Unit
		Collector to base voltage	VCBO	25	V
Rating		Collector to emitter voltage	VCEO	20	V
of		Emitter to base voltage	VEBO	7	V
element
		Collector current	I	0.5	A
			C
		Peak collector current	ICP	1	A
		Total power dissipation	PT	300	mW
Overall		Junction temperature	Tj	150	˚C
		Storage temperature	Tstg	–55 to +150	˚C

Unit: mm

				2.8	+0.2
					–0.3
0.65±0.15				1.5	+0.25	0.65±0.15
					–0.05
		6			1	+0.1	+0.1
+0.2		1.9±0.1 0.95 0.95	5		2	–0.050.3	–0.050.5 1.450.1±
–0.052.9			4		3
+0.2	1.1–0.1	0.8				+0.1	0.16–0.06
	0.1 to 0.3				0.05
		0.4±0.2
					0 to
1 : Collector (Tr1)				4 : Collector (Tr2)
2 : Base (Tr2)				5 : Base (Tr1)
3 : Emitter (Tr2)				6 : Emitter (Tr1)
				EIAJ : SC–74
				Mini Type Package (6–pin)

Marking Symbol: 5Y

Internal Connection

6	Tr1
	1
5	2
4	3
	Tr2

■ Electrical Characteristics		(Ta=25˚C)
Parameter		Symbol		Conditions	min	typ	max	Unit
Collector to base voltage		VCBO		IC = 10 A, IE = 0	25			V
Collector to emitter voltage		VCEO		IC = 1mA, IB = 0	20			V
Emitter to base voltage		VEBO		IE = 10 A, IC = 0	7			V
Collector cutoff current		ICBO		VCB = 25V, IE = 0			0.1	A
		ICEO		VCE = 20V, IB = 0			1	A
Forward current transfer ratio		hFE1		VCE = 2V, IC = 500mA*	65		350
		hFE2		VCE = 2V, IC = 1A*	50
Collector to emitter saturation voltage		VCE(sat)		IC = 500mA, IB = 20mA*		0.2	0.4	V
Base to emitter saturation voltage		VBE(sat)		IC = 500mA, IB = 50mA*			1.2	V
Transition frequency		fT		VCB = 10V, IE = –50mA, f = 200MHz		150		MHz
Collector output capacitance		Cob		VCB = 10V, IE = 0, f = 1MHz		6		pF

* Pulse measurement

1