MITSUBISHI PHOTO DIODES
PD8XX2 SERIES
InGaAs AVALANCHE PHOTO DIODES
PD8042, PD8932, PD893D2
Feature
φ50μm active diameter
1000~1600nm wavelength band
Small dark current
Low noise
High responsivity
APPLICATION
Receiver for optical communication system
Symbol |
Parameter |
Conditions |
Ratings |
Unit |
|
|
|
|
|
Ir |
Reverse current |
- |
500 |
μA |
|
|
|
|
|
If |
Forward curent |
- |
2 |
mA |
|
|
|
|
|
Tc |
Case temperature |
- |
-40 ~ +85 |
C |
|
|
|
|
|
Tstg |
Storage temperature |
- |
-40 ~ +100 |
C |
|
|
|
|
|
Note1: The maximum rating means the limitation over which the device should not be operated even instant time, and this does not mean the guarantee of its lifetime.
As for the reliability,please refer to the reliability report from Mitsubishi Semiconductor Quality Assurance Department.
ELECTRICAL / OPTICAL CHARACTERISTICS (Tc=25 C)
Symbol |
Parameter |
Test conditions |
|
Limits |
|
Unit |
|
|
|
|
|||||
Min. |
Typ. |
Max. |
|||||
|
|
|
|
||||
|
|
|
|
|
|
|
|
VBR |
Break-down voltage |
Id=100μA |
40 |
60 |
90 |
V |
|
|
|
|
|
|
|
|
|
Id |
Dark current |
Vr=0.9VBR |
- |
60 |
100 |
nA |
|
|
|
|
|
|
|
|
|
R |
Responsivity |
M=1, λ=1300nm |
- |
0.8 |
- |
A/W |
|
Ct |
Capacitance |
Vr=0.9VBR, f=1MHz |
- |
0.4 *1 |
0.9 |
pF |
|
|
|
|
|
|
|
|
|
fc |
Cut-off frequency |
M=10, λ=1300nm, RL=50Ω, -3dB |
1.0 |
2.5 |
- |
GHz |
|
|
|
|
|
|
|
|
*1 Applied to PD8932: Ct=0.5pF(typ.), PD8042: Ct=0.7pF(typ.)
MITSUBISHI ELECTRIC
As of Mar, 2002