International Rectifier ST300C20C2L, ST300C20C2, ST300C20C1L, ST300C20C1, ST300C20C0L Datasheet

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DISCRETE POWER DIODES and THYRISTORS

DATA BOOK

D-350

International Rectifier ST300C20C2L, ST300C20C2, ST300C20C1L, ST300C20C1, ST300C20C0L Datasheet

Bulletin I25157/B

ST300C..C SERIES

PHASE CONTROL THYRISTORS

Hockey Puk Version

Features

650A

Center amplifying gate

Metal case with ceramic insulator

International standard case TO-200AB (E-PUK)

Typical Applications

DC motor controls

Controlled DC power supplies

AC controllers

case style TO-200AB (E-PUK)

Major Ratings and Characteristics

Parameters

ST300C..C

Units

 

 

 

 

IT(AV)

 

650

A

 

@ Ths

55

°C

 

 

 

 

IT(RMS)

 

1290

A

 

@ Ths

25

°C

 

 

 

 

ITSM

@ 50Hz

8000

A

 

@ 60Hz

8380

A

 

 

 

 

I2t

@ 50Hz

320

KA2s

 

@ 60Hz

292

KA2s

VDRM/VRRM

 

400 to 2000

V

tq

typical

100

µs

TJ

 

- 40 to 125

°C

 

 

 

 

D-351

ST300C..C Series

ELECTRICAL SPECIFICATIONS

Voltage Ratings

 

Voltage

VDRM/VRRM, max. repetitive

VRSM , maximum non-

IDRM/IRRM max.

Type number

Code

peak and off-state voltage

repetitive peak voltage

@ TJ = TJ max

 

 

V

V

mA

 

04

400

500

 

 

 

 

 

 

 

08

800

900

 

 

 

 

 

 

ST300C..C

12

1200

1300

50

 

 

 

16

1600

1700

 

 

 

 

 

 

 

 

18

1800

1900

 

 

 

 

 

 

 

20

2000

2100

 

On-state Conduction

 

Parameter

ST300C..C

Units

Conditions

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

IT(AV)

Max. average on-state current

650 (320)

A

180° conduction, half sine wave

 

 

 

@ Heatsink temperature

55 (75)

°C

double side (single side) cooled

 

 

 

 

 

 

 

 

 

IT(RMS)

Max. RMS on-state current

1290

 

 

DC @ 25°C heatsink temperature double side cooled

ITSM

Max. peak, one-cycle

8000

 

 

t = 10ms

No voltage

 

 

 

 

 

non-repetitive surge current

8380

A

t = 8.3ms

reapplied

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

6730

 

 

t = 10ms

100% VRRM

 

 

 

 

 

 

7040

 

 

t = 8.3ms

reapplied

 

Sinusoidal half wave,

 

 

 

 

 

 

 

 

 

 

 

I2t

Maximum I2t for fusing

320

 

 

t = 10ms

No voltage

 

Initial T

J

= T max.

 

 

 

 

 

 

 

 

 

J

 

 

292

KA2s

t = 8.3ms

reapplied

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

226

t = 10ms

100% VRRM

 

 

 

 

 

 

 

 

 

 

 

 

 

 

207

 

 

t = 8.3ms

reapplied

 

 

 

 

 

 

 

 

 

 

 

 

 

I2Öt

Maximum I2Öt for fusing

3200

KA2Ös

t = 0.1 to 10ms, no voltage reapplied

 

VT(TO)1

Low level value of threshold

0.97

 

 

(16.7% x p x IT(AV) < I < p x IT(AV)), TJ = TJ max.

 

voltage

 

 

 

 

V

 

 

 

 

 

 

VT(TO)2

High level value of threshold

0.98

(I > p x IT(AV)),TJ = TJ max.

 

 

 

 

 

 

 

 

 

voltage

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

rt1

Low level value of on-state

0.74

 

 

(16.7% x p x IT(AV) < I < p x IT(AV)), TJ = TJ max.

 

slope resistance

 

 

 

 

mW

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

rt2

High level value of on-state

0.73

 

(I > p x IT(AV)),TJ = TJ max.

 

 

 

 

 

 

 

 

 

slope resistance

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

VTM

Max. on-state voltage

2.18

V

Ipk= 1635A, TJ = TJ max, tp = 10ms sine pulse

IH

Maximum holding current

600

mA

TJ = 25°C, anode supply 12V resistive load

IL

Typical latching current

1000

 

 

 

 

 

 

 

 

D-352

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