International Rectifier ST1200C20K3L, ST1200C20K3, ST1200C18K1, ST1200C18K0L, ST1200C18K0 Datasheet
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Bulletin I25196/A |
ST1200C..K SERIES
PHASE CONTROL THYRISTORS |
Hockey Puk Version |
1650A
Features
Center amplifying gate
Metal case with ceramic insulator
International standard case A-24 (K-PUK)
High profile hockey-puk
TypicalApplications
DC motor controls
Controlled DC power supplies
AC controllers
case style A-24 (K-PUK)
Major Ratings and Characteristics
Parameters |
ST1200C..K |
Units |
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IT(AV) |
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1650 |
A |
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@ Ths |
55 |
°C |
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IT(RMS) |
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3080 |
A |
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@ Ths |
25 |
°C |
ITSM |
@ 50Hz |
30500 |
A |
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@ 60Hz |
32000 |
A |
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I2t |
@ 50Hz |
4651 |
KA2s |
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@ 60Hz |
4250 |
KA2s |
VDRM/VRRM |
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1200 to 2000 |
V |
tq |
typical |
200 |
µs |
TJ |
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- 40 to 125 |
°C |
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ST1200C..K Series |
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ELECTRICAL SPECIFICATIONS |
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Voltage Ratings |
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Voltage |
VDRM/VRRM, max. repetitive |
VRSM , maximum non- |
IDRM/IRRM max. |
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Type number |
Code |
peak and off-state voltage |
repetitive peak voltage |
@ TJ = TJ max |
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V |
V |
mA |
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12 |
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1200 |
1300 |
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14 |
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1400 |
1500 |
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ST1200C..K |
16 |
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1600 |
1700 |
100 |
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18 |
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1800 |
1900 |
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20 |
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2000 |
2100 |
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On-state Conduction
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Parameter |
ST1200C..K |
Units |
Conditions |
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IT(AV) |
Max. average on-state current |
1650 (700) |
A |
180° conduction, half sine wave |
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@ Heatsink temperature |
55 (85) |
°C |
double side (single side) cooled |
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IT(RMS) |
Max. RMS on-state current |
3080 |
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DC @ 25°C heatsink temperature double side cooled |
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ITSM |
Max. peak, one-cycle |
30500 |
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t = 10ms |
No voltage |
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non-repetitive surge current |
32000 |
A |
t = 8.3ms |
reapplied |
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25700 |
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t = 10ms |
100% VRRM |
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26900 |
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t = 8.3ms |
reapplied |
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Sinusoidal half wave, |
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I2t |
Maximum I2t for fusing |
4651 |
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t = 10ms |
No voltage |
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Initial T |
J |
= T max. |
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J |
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4250 |
KA2s |
t = 8.3ms |
reapplied |
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3300 |
t = 10ms |
100% VRRM |
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3000 |
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t = 8.3ms |
reapplied |
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I2Öt |
Maximum I2Öt for fusing |
46510 |
KA2Ös |
t = 0.1 to 10ms, no voltage reapplied |
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VT(TO)1 |
Low level value of threshold |
0.91 |
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(16.7% x p x IT(AV) < I < p x IT(AV)), TJ = TJ max. |
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voltage |
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V |
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VT(TO)2 |
High level value of threshold |
1.01 |
(I > p x IT(AV)),TJ = TJ max. |
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voltage |
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rt1 |
Low level value of on-state |
0.21 |
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(16.7% x p x IT(AV) < I < p x IT(AV)), TJ = TJ max. |
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slope resistance |
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mW |
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rt2 |
High level value of on-state |
0.19 |
(I > p x IT(AV)),TJ = TJ max. |
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slope resistance |
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VTM |
Max. on-state voltage |
1.73 |
V |
Ipk= 4000A, TJ = TJ max, tp = 10ms sine pulse |
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IH |
Maximum holding current |
600 |
mA |
TJ = 25°C, anode supply 12V resistive load |
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IL |
Typical latching current |
1000 |
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ST1200C..K Series |
Switching
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Parameter |
ST1200C..K |
Units |
Conditions |
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di/dt |
Max. non-repetitive rate of rise |
1000 |
A/µs |
Gate drive 20V, 20Ω, tr ≤ 1µs |
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of turned-on current |
TJ = TJ max, anode voltage ≤ 80% VDRM |
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td |
Typical delay time |
1.9 |
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Gate current 1A, dig/dt = 1A/µs |
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µs |
Vd = 0.67% VDRM, TJ = 25°C |
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tq |
Typical turn-off time |
200 |
ITM = 550A, TJ = TJ max, di/dt = 40A/µs, VR = 50V |
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Ω, |
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dv/dt = 20V/µs, Gate 0V 100 tp |
= 500µs |
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Blocking
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Parameter |
ST1200C..K |
Units |
Conditions |
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dv/dt |
Maximum critical rate of rise of |
500 |
V/µs |
T |
= T |
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max. linear to 80% rated V |
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off-state voltage |
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J |
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J |
DRM |
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IRRM |
Max. peak reverse and off-state |
100 |
mA |
TJ = TJ max, rated VDRM/VRRM applied |
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IDRM |
leakage current |
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Triggering
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Parameter |
ST1200C..K |
Units |
Conditions |
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PGM |
Maximum peak gate power |
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16 |
W |
TJ = TJ max, tp ≤ 5ms |
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PG(AV) |
Maximum average gate power |
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3 |
TJ = TJ max, f = 50Hz, d% = 50 |
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IGM |
Max. peak positive gate current |
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3.0 |
A |
TJ = TJ max, tp ≤ 5ms |
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+VGM |
Maximum peak positive |
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20 |
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gate voltage |
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V |
TJ = TJ max, tp ≤ 5ms |
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-VGM |
Maximum peak negative |
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5.0 |
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gate voltage |
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TYP. |
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MAX. |
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IGT |
DC gate current required |
200 |
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TJ = - 40°C |
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100 |
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200 |
mA |
TJ = 25°C |
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to trigger |
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Max. required gate trigger/ cur- |
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50 |
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TJ = 125°C |
rent/ voltage are the lowest value |
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which will trigger all units 12V |
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1.4 |
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TJ = - 40°C |
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VGT |
DC gate voltage required |
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anode-to-cathode applied |
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1.1 |
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3.0 |
V |
TJ = 25°C |
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to trigger |
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0.9 |
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- |
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TJ = 125°C |
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IGD |
DC gate current not to trigger |
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10 |
mA |
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Max. gate current/voltage not to |
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TJ = TJ max |
trigger is the max. value which |
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VGD |
DC gate voltage not to trigger |
0.25 |
V |
will not trigger any unit with rated |
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VDRM anode-to-cathode applied |
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