International Rectifier ST730C16L3L, ST730C16L3, ST730C16L2L, ST730C16L1L, ST730C16L1 Datasheet
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DISCRETE POWER DIODES and THYRISTORS
DATA BOOK
D-334
To Order
Previous Datasheet |
Index |
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Bulletin I25191/B
ST730C..L SERIES
PHASE CONTROL THYRISTORS |
Hockey Puk Version |
Features |
990A |
Center amplifying gate
Metal case with ceramic insulator
International standard case TO-200AC (B-PUK)
Typical Applications
DC motor controls
Controlled DC power supplies
AC controllers
case style TO-200AC (B-PUK)
Major Ratings and Characteristics
Parameters |
ST730C..L |
Units |
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IT(AV) |
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990 |
A |
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@ Ths |
55 |
°C |
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IT(RMS) |
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2000 |
A |
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@ Ths |
25 |
°C |
ITSM |
@ 50Hz |
17800 |
A |
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@ 60Hz |
18700 |
A |
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I2t |
@ 50Hz |
1591 |
KA2s |
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@ 60Hz |
1452 |
KA2s |
VDRM/VRRM |
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800 to 1800 |
V |
tq |
typical |
150 |
µs |
TJ |
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- 40 to 125 |
°C |
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D-335
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Index |
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ST730C..L Series
ELECTRICAL SPECIFICATIONS
Voltage Ratings
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Voltage |
VDRM/VRRM, max. repetitive |
VRSM , maximum non- |
IDRM/IRRM max. |
Type number |
Code |
peak and off-state voltage |
repetitive peak voltage |
@ TJ = TJ max |
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V |
V |
mA |
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08 |
800 |
900 |
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12 |
1200 |
1300 |
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ST730C..L |
14 |
1400 |
1500 |
80 |
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16 |
1600 |
1700 |
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18 |
1800 |
1900 |
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On-state Conduction
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Parameter |
ST730C..L |
Units |
Conditions |
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IT(AV) |
Max. average on-state current |
990 (375) |
A |
180° conduction, half sine wave |
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@ Heatsink temperature |
55 (85) |
°C |
double side (single side) cooled |
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IT(RMS) |
Max. RMS on-state current |
2000 |
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DC @ 25°C heatsink temperature double side cooled |
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ITSM |
Max. peak, one-cycle |
17800 |
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t = 10ms |
No voltage |
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non-repetitive surge current |
18700 |
A |
t = 8.3ms |
reapplied |
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15000 |
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t = 10ms |
100% VRRM |
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15700 |
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t = 8.3ms |
reapplied |
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Sinusoidal half wave, |
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I2t |
Maximum I2t for fusing |
1591 |
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t = 10ms |
No voltage |
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Initial T |
J |
= T max. |
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J |
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1452 |
KA2s |
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t = 8.3ms |
reapplied |
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1125 |
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t = 10ms |
100% VRRM |
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1027 |
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t = 8.3ms |
reapplied |
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I2Öt |
Maximum I2Öt for fusing |
15910 |
KA2Ös |
t = 0.1 to 10ms, no voltage reapplied |
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VT(TO)1 |
Low level value of threshold |
0.98 |
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(16.7% x p x IT(AV) < I < p x IT(AV)), TJ = TJ max. |
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voltage |
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V |
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VT(TO)2 |
High level value of threshold |
1.12 |
(I > p x IT(AV)),TJ = TJ max. |
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voltage |
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rt1 |
Low level value of on-state |
0.32 |
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(16.7% x p x IT(AV) < I < p x IT(AV)), TJ = TJ max. |
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slope resistance |
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mW |
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rt2 |
High level value of on-state |
0.27 |
(I > p x IT(AV)),TJ = TJ max. |
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slope resistance |
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VTM |
Max. on-state voltage |
1.62 |
V |
Ipk= 2000A, TJ = TJ max, tp = 10ms sine pulse |
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IH |
Maximum holding current |
600 |
mA |
TJ = 25°C, anode supply 12V resistive load |
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IL |
Typical latching current |
1000 |
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Switching
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Parameter |
ST730C..L |
Units |
Conditions |
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di/dt |
Max. non-repetitive rate of rise |
1000 |
A/µs |
Gate drive 20V, 20W, tr £ 1µs |
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of turned-on current |
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TJ = TJ max, anode voltage £ 80% VDRM |
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td |
Typical delay time |
1.0 |
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Gate current 1A, dig/dt = 1A/µs |
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µs |
Vd = 0.67% VDRM, TJ = 25°C |
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tq |
Typical turn-off time |
150 |
ITM = 750A, TJ = TJ max, di/dt = 60A/µs , VR = 50V |
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dv/dt = 20V/µs , Gate 0V 100W, t |
p |
= 500µs |
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D-336
To Order
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