International Rectifier ST780C06L0, ST780C04L3L, ST780C04L3, ST780C04L2L, ST780C04L2 Datasheet
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DISCRETE POWER DIODES and THYRISTORS
DATA BOOK
D-342
Bulletin I25192/B
ST780C..L SERIES
PHASE CONTROL THYRISTORS |
Hockey Puk Version |
1350A
D-343
ST780C..L Series
ELECTRICAL SPECIFICATIONS
Voltage Ratings
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Voltage |
VDRM/VRRM, max. repetitive |
VRSM , maximum non- |
IDRM/IRRM max. |
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Type number |
Code |
peak and off-state voltage |
repetitive peak voltage |
@ TJ = TJ max |
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V |
V |
mA |
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ST780C..L |
04 |
400 |
500 |
80 |
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06 |
600 |
700 |
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On-state Conduction
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Parameter |
ST780C..L |
Units |
Conditions |
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IT(AV) |
Max. average on-state current |
1350 (500) |
A |
180° conduction, half sine wave |
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@ Heatsink temperature |
55 (85) |
°C |
double side (single side) cooled |
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IT(RMS) |
Max. RMS on-state current |
2700 |
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DC @ 25°C heatsink temperature double side cooled |
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ITSM |
Max. peak, one-cycle |
24400 |
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t = 10ms |
No voltage |
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non-repetitive surge current |
25600 |
A |
t = 8.3ms |
reapplied |
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20550 |
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t = 10ms |
100% VRRM |
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21500 |
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t = 8.3ms |
reapplied |
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Sinusoidal half wave, |
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I2t |
Maximum I2t for fusing |
2986 |
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t = 10ms |
No voltage |
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Initial T |
J |
= T max. |
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J |
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2726 |
KA2s |
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t = 8.3ms |
reapplied |
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2112 |
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t = 10ms |
100% VRRM |
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1928 |
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t = 8.3ms |
reapplied |
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I2Öt |
Maximum I2Öt for fusing |
29860 |
KA2Ös |
t = 0.1 to 10ms, no voltage reapplied |
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VT(TO)1 |
Low level value of threshold |
0.80 |
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(16.7% x p x IT(AV) < I < p x IT(AV)), TJ = TJ max. |
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voltage |
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V |
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VT(TO)2 |
High level value of threshold |
0.90 |
(I > p x IT(AV)),TJ = TJ max. |
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voltage |
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rt1 |
Low level value of on-state |
0.14 |
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(16.7% x p x IT(AV) < I < p x IT(AV)), TJ = TJ max. |
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slope resistance |
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mW |
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rt2 |
High level value of on-state |
0.13 |
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(I > p x IT(AV)),TJ = TJ max. |
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slope resistance |
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VTM |
Max. on-state voltage |
1.31 |
V |
Ipk= 3600A, TJ = TJ max, tp = 10ms sine pulse |
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IH |
Maximum holding current |
600 |
mA |
TJ = 25°C, anode supply 12V resistive load |
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IL |
Typical latching current |
1000 |
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Switching
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Parameter |
ST780C..L |
Units |
Conditions |
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di/dt |
Max. non-repetitive rate of rise |
1000 |
A/µs |
Gate drive 20V, 20W, tr £ 1µs |
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of turned-on current |
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TJ = TJ max, anode voltage £ 80% VDRM |
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td |
Typical delay time |
1.0 |
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Gate current 1A, dig/dt = 1A/µs |
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µs |
Vd = 0.67% VDRM, TJ = 25°C |
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tq |
Typical turn-off time |
150 |
ITM = 750A, TJ = TJ max, di/dt = 60A/µs , VR = 50V |
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dv/dt = 20V/µs , Gate 0V 100W, t |
p |
= 500µs |
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D-344
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