International Rectifier ST280S04P1VL, ST280S04P1V, ST280S04P0VL, ST280S04P0V, ST280S04M2VL Datasheet

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International Rectifier ST280S04P1VL, ST280S04P1V, ST280S04P0VL, ST280S04P0V, ST280S04M2VL Datasheet

Bulletin I25161/B

ST280S SERIES

PHASE CONTROLTHYRISTORS

Stud Version

Features

280A

Center amplifying gate

Hermetic metal case with glass-metal seal insulator

International standard case TO-209AB (TO-93)

Threaded studs UNF 3/4 - 16UNF2A or ISO M16x1.5

Compression Bonded Encapsulation for heavy duty operations such as severe thermal cycling

Typical Applications

DC motor controls

Controlled DC power supplies

AC controllers

Major Ratings and Characteristics

Parameters

ST280S

Units

 

 

 

 

 

IT(AV)

 

 

280

A

 

@ TC

85

°C

 

 

 

 

 

IT(RMS)

 

 

440

A

ITSM

@ 50Hz

7850

A

 

@ 60Hz

8220

A

 

 

 

 

 

I2t

@ 50Hz

308

KA2s

 

 

 

 

 

 

@ 60Hz

281

KA2s

 

 

 

 

 

VDRM/VRRM

 

 

400 to 600

V

tq

typical

100

µs

 

 

 

 

 

TJ

 

 

- 40 to 125

°C

case style TO-209AB (TO-93)

ST280S Series

ELECTRICAL SPECIFICATIONS

Voltage Ratings

 

Voltage

VDRM/VRRM, max. repetitive

VRSM , maximum non-

IDRM/IRRM max.

Type number

Code

peak and off-state voltage

repetitive peak voltage

@ TJ = TJ max

 

 

V

V

mA

 

 

 

 

 

ST280S

04

400

500

30

 

 

 

06

600

700

 

 

 

 

 

 

 

On-state Conduction

 

Parameter

ST280S

Units

Conditions

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

IT(AV)

Max. average on-state current

280

A

180° conduction, half sine wave

 

 

 

 

 

@ Case temperature

85

°C

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

IT(RMS)

Max. RMS on-state current

440

A

DC @ 75°C case temperature

 

 

 

 

ITSM

Max. peak, one-cycle

7850

 

t = 10ms

 

No voltage

 

 

 

 

 

 

 

non-repetitive surge current

8220

A

t = 8.3ms

 

reapplied

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

6600

t = 10ms

 

100% VRRM

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

6900

 

t = 8.3ms

 

reapplied

 

Sinusoidal half wave,

 

 

 

 

 

 

 

 

 

 

 

 

 

I2t

Maximum I2t for fusing

310

 

t = 10ms

 

No voltage

 

Initial T

J

= T

J

max.

 

 

 

 

 

 

 

 

 

 

 

 

 

220

KA2s

t = 8.3ms

 

reapplied

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

218

t = 10ms

 

100% VRRM

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

200

 

t = 8.3ms

 

reapplied

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

I2Öt

Maximum I2Öt for fusing

3100

KA2Ös

t = 0.1 to 10ms, no voltage reapplied

 

 

 

VT(TO)1

Low level value of threshold

0.84

 

(16.7% x p x IT(AV) < I < p x IT(AV)), TJ = TJ max.

 

voltage

 

 

 

V

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

VT(TO)2

High level value of threshold

0.88

(I > p x IT(AV)),TJ = TJ max.

 

 

 

 

 

 

 

 

 

 

 

 

voltage

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

rt1

Low level value of on-state

0.50

 

(16.7% x p x IT(AV) < I < p x IT(AV)), TJ = TJ max.

 

slope resistance

 

 

 

mW

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

rt2

High level value of on-state

0.47

(I > p x IT(AV)),TJ = TJ max.

 

 

 

 

 

 

 

 

 

 

 

 

slope resistance

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

VTM

Max. on-state voltage

1.28

V

Ipk= 880A, TJ = TJ max, tp = 10ms sine pulse

IH

Maximum holding current

600

mA

TJ = 25°C, anode supply 12V resistive load

 

 

 

IL

Max. (typical) latching current

1000 (300)

 

 

 

 

 

 

 

 

 

 

Switching

 

Parameter

ST280S

Units

Conditions

 

 

 

 

 

di/dt

Max. non-repetitive rate of rise

1000

A/µs

Gate drive 20V, 20W, tr £ 1µs

 

of turned-on current

TJ = TJ max, anode voltage £ 80% VDRM

td

Typical delay time

1.0

 

Gate current 1A, dig/dt = 1A/µs

µs

Vd = 0.67% VDRM, TJ = 25°C

 

 

 

tq

Typical turn-off time

100

ITM = 300A, TJ = TJ max, di/dt = 20A/µs , VR = 50V

 

 

dv/dt = 20V/µs , Gate 0V 100W, tp = 500µs

 

 

 

 

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