International Rectifier ST180S04M0L, ST180S04M0, ST180S20P1L, ST180S20P1, ST180S20P0L Datasheet
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DISCRETE POWER DIODES and THYRISTORS
DATA BOOK
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ST180S SERIES
PHASE CONTROL THYRISTORS
Features
Center amplifying gate
Hermetic metal case with ceramic insulator
(Also available with glass-metal seal up to 1200V)
International standard case TO-209AB (TO-93)
Threaded studs UNF 3/4 - 16UNF2A or ISO M16x1.5
Compression Bonded Encapsulation for heavy duty operations such as severe thermal cycling
Stud Version
200A
Typical Applications
DC motor controls
Controlled DC power supplies
AC controllers
Major Ratings and Characteristics |
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Parameters |
ST180S |
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Units |
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IT(AV) |
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200 |
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A |
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@ TC |
85 |
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°C |
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IT(RMS) |
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314 |
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A |
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ITSM |
@ 50Hz |
5000 |
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A |
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@ 60Hz |
5230 |
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A |
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I2t |
@ 50Hz |
125 |
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KA2s |
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@ 60Hz |
114 |
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KA2s |
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VDRM/VRRM |
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400 to 2000 |
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V |
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case style |
tq |
typical |
100 |
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µs |
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TO-209AB (TO-93) |
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TJ |
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- 40 to 125 |
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°C |
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ELECTRICAL SPECIFICATIONS |
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Voltage Ratings |
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Voltage |
VDRM/VRRM, max. repetitive |
VRSM , maximum non- |
IDRM/IRRM max. |
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Type number Code |
peak and off-state voltage |
repetitive peak voltage |
@ TJ = TJ max |
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V |
V |
mA |
04 |
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400 |
500 |
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08 |
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800 |
900 |
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12 |
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1200 |
1300 |
30 |
ST180S |
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1600 |
1700 |
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16 |
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18 |
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1800 |
1900 |
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20 |
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2000 |
2100 |
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On-state Conduction
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Parameter |
ST180S |
Units |
Conditions |
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IT(AV) |
Max. average on-state current |
200 |
A |
180° conduction, half sine wave |
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@ Case temperature |
85 |
°C |
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IT(RMS) |
Max. RMS on-state current |
314 |
A |
DC @ 76°C case temperature |
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ITSM |
Max. peak, one-cycle |
5000 |
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t = 10ms |
No voltage |
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non-repetitive surge current |
5230 |
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t = 8.3ms |
reapplied |
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A |
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4200 |
t = 10ms |
100% VRRM |
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4400 |
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t = 8.3ms |
reapplied |
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Sinusoidal half wave, |
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I2t |
Maximum I2t for fusing |
125 |
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t = 10ms |
No voltage |
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Initial TJ = TJ max. |
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114 |
KA2s |
t = 8.3ms |
reapplied |
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88 |
t = 10ms |
100% VRRM |
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81 |
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t = 8.3ms |
reapplied |
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I2Öt |
Maximum I2Öt for fusing |
1250 |
KA2Ös |
t = 0.1 to 10ms, no voltage reapplied |
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VT(TO)1 |
Low level value of threshold |
1.08 |
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(16.7% x p x IT(AV) < I < p x IT(AV)), TJ = TJ max. |
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voltage |
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V |
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VT(TO)2 |
High level value of threshold |
1.14 |
(I > p x IT(AV)),TJ = TJ max. |
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voltage |
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rt1 |
Low level value of on-state |
1.18 |
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(16.7% x p x IT(AV) < I < p x IT(AV)), TJ = TJ max. |
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slope resistance |
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mW |
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rt2 |
High level value of on-state |
1.14 |
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(I > p x IT(AV)),TJ = TJ max. |
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slope resistance |
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VTM |
Max. on-state voltage |
1.75 |
V |
Ipk= 570A, TJ = 125°C, tp = 10ms sine pulse |
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IH |
Maximum holding current |
600 |
mA |
TJ = TJ max, anode supply 12V resistive load |
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IL |
Max. (typical) latching current |
1000 (300) |
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Switching
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Parameter |
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ST180S |
Units |
Conditions |
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di/dt |
Max. non-repetitive rate of rise |
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1000 |
A/µs |
Gate drive 20V, 20W, tr £ 1µs |
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of turned-on current |
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TJ = TJ max, anode voltage £ 80% VDRM |
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td |
Typical delay time |
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1.0 |
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Gate current 1A, dig/dt = 1A/µs |
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µs |
Vd = 0.67% VDRM, TJ = 25°C |
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tq |
Typical turn-off time |
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100 |
ITM = 300A, TJ = TJ max, di/dt = 20A/µs , VR = 50V |
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To Order |
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dv/dt = 20V/µs , Gate 0V 100W, tp = 500µs |
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