International Rectifier SD303C04S20C, SD303C08S10C, SD303C08S20C, SD303C10S10C, SD303C10S15C Datasheet

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Bulletin I2066/B

SD303C..C SERIES

FAST RECOVERY DIODES

Features

High power FAST recovery diode series 1.0 to 2.0 µs recovery time

High voltage ratings up to 2500V

High current capability

Optimized turn on and turn off characteristics Low forward recovery

Fast and soft reverse recovery

Press-puk encapsulation

Case style conform to JEDEC DO-200AA Maximum junction temperature 125°C

Typical Applications

Snubber diode for GTO

High voltage free-wheeling diode

Fast recovery rectifier applications

Hockey Puk Version

350A

case style DO-200AA

Major Ratings and Characteristics

Parameters			SD303C..C	Units
IF(AV)			350	A
		@ Ths	55	°C
IF(RMS)			550	A
		@ Ths	25	°C
IFSM		@ 50Hz	5770	A
		@ 60Hz	6040	A
I2t		@ 50Hz	166	KA2s
		@ 60Hz	152	KA2s
VRRM	range		400 to 2500	V
trr	range		1.0 to 2.0	µs
		@ TJ	25	°C
TJ			- 40 to 125	°C

D-655

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SD303C..C Series

ELECTRICAL SPECIFICATIONS

Voltage Ratings

			Voltage	VRRM max. repetitive	VRSM , maximum non-	IRRM max.
	Type number		Code	peak and off-state voltage	repetitive peak voltage	TJ = 125°C
				V	V	mA
			04	400	500
	SD303C..S10C		08	800	900
			10	1000	1100
			12	1200	1300	35
	SD303C..S15C		14	1400	1500
			16	1600	1700
	SD303C..S20C		20	2000	2100
			25	2500	2600

Forward Conduction

	Parameter	SD303C..C	Units	Conditions
IF(AV)	Max. average forward current	350(175)	A	180° conduction, half sine wave.
	@ Heatsink temperature	55(75)	°C	Double side (single side) cooled
IF(RMS)	Max. RMS current	550	A	@ 25°C heatsink temperature double side cooled
IFSM	Max. peak, one-cycle	5770		t = 10ms		No voltage
	non-repetitive forward current	6040	A	t = 8.3ms		reapplied
		4850		t = 10ms		100% VRRM
		5080		t = 8.3ms		reapplied		Sinusoidal half wave,
I2t	Maximum I2t for fusing	166		t = 10ms		No voltage		Initial T	J	= T	max.
											J
		152	KA2s	t = 8.3ms		reapplied
		117		t = 10ms		100% VRRM
		107		t = 8.3ms		reapplied
I2Öt	Maximum I2Öt for fusing	1660	KA2Ös	t = 0.1 to 10ms, no voltage reapplied
VF(TO)1 Low level of threshold voltage		1.14	V	(16.7% x p x IF(AV) < I < p x IF(AV)), TJ = TJ max.
VF(TO)2	High level of threshold voltage	1.63		(I > p x IF(AV)), TJ = TJ max.
rf1	Low level of forward slope resistance	1.14	mW	(16.7% x p x IF(AV) < I < p x IF(AV)), TJ = TJ max.
rf2	High level of forward slope resistance	0.77		(I > p x IF(AV)), TJ = TJ max.
VFM	Max. forward voltage	2.26	V	Ipk= 1100A, TJ = 25°C, tp = 10ms sinusoidal wave

Recovery Characteristics

Code	TJ = 25	o	C	Test conditions			Max. values @ TJ= 125°C
	typical trr			Ipk	di/dt	Vr	trr	Qrr	Irr
	@ 25% IRRM			Square Pulse			@ 25% IRRM
	(ms)			(A)	(A/ms)	(V)	(ms)	(mC)	(A)
S10	1.0						2.4	52	33
S15	1.5			750	25	-30	2.9	90	44
S20	2.0						3.2	107	46
							D-656

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SD303C..C Series

Fig. 3 - Current Ratings Characteristics

Fig. 4 - Current Ratings Characteristics

Fig. 5 - Forward Power Loss Characteristics

Fig. 6 - Forward Power Loss Characteristics

Fig. 7 - Maximum Non-repetitive Surge Current

Single and Double Side Cooled

Fig. 8 - Maximum Non-repetitive Surge Current

Single and Double Side Cooled

D-659

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