International Rectifier SD253N04S15MBV, SD253N04S15MSV, SD253N04S15MV, SD253N04S15PBV, SD253N08S15MV Datasheet
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DISCRETE POWER DIODES and THYRISTORS
DATA BOOK
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SD253N/R SERIES
FAST RECOVERY DIODES
Features
High power FAST recovery diode series 1.5 to 2.0 µs recovery time
High voltage ratings up to 1600V
High current capability
Optimized turn on and turn off characteristics Low forward recovery
Fast and soft reverse recovery Compression bonded encapsulation Stud version JEDEC DO-205AB (DO-9) Maximum junction temperature 125°C
Stud Version
250A
Typical Applications
Snubber diode for GTO
High voltage free-wheeling diode
Fast recovery rectifier applications
Major Ratings and Characteristics
Parameters |
SD253N/R |
Units |
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IF(AV) |
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250 |
A |
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@ TC |
85 |
°C |
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IF(RMS) |
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392 |
A |
IFSM |
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@ 50Hz |
5350 |
A |
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@ 60Hz |
5600 |
A |
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I2t |
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@ 50Hz |
143 |
KA2s |
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@ 60Hz |
130 |
KA2s |
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VRRM range |
400 to 1600 |
V |
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trr |
range |
1.5 to 2.0 |
µs |
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@ TJ |
25 |
°C |
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TJ |
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- 40 to 125 |
°C |
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case style DO-205AB (DO-9)
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ELECTRICAL SPECIFICATIONS |
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Voltage Ratings |
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Voltage |
VRRM max. repetitive |
VRSM , maximum non- |
IRRM max. |
Type number |
Code |
peak and off-state voltage |
repetitive peak voltage |
TJ = 125°C |
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V |
V |
mA |
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04 |
400 |
500 |
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SD253N/R..S15 |
08 |
800 |
900 |
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10 |
1000 |
1100 |
35 |
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12 |
1200 |
1300 |
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SD253N/R..S20 |
14 |
1400 |
1500 |
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16 |
1600 |
1700 |
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Forward Conduction
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Parameter |
SD253N/R |
Units |
Conditions |
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IF(AV) |
Max. average forward current |
250 |
A |
180° conduction, half sine wave. |
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@ Case temperature |
85 |
°C |
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IF(RMS) |
Max. RMS current |
392 |
A |
DC @ 74°C case temperature |
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IFSM |
Max. peak, one-cycle |
5350 |
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t = 10ms |
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No voltage |
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non-repetitive forward current |
5600 |
A |
t = 8.3ms |
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reapplied |
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4500 |
t = 10ms |
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100% VRRM |
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4710 |
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t = 8.3ms |
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reapplied |
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Sinusoidal half wave, |
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I2t |
Maximum I2t for fusing |
143 |
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t = 10ms |
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No voltage |
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Initial T |
J |
= T |
J |
max. |
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130 |
KA2s |
t = 8.3ms |
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reapplied |
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101 |
t = 10ms |
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100% VRRM |
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92 |
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t = 8.3ms |
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reapplied |
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I2Öt |
Maximum I2Öt for fusing |
1430 |
KA2Ös |
t = 0.1 to 10ms, no voltage reapplied |
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VF(TO)1 Low level of threshold voltage |
0.87 |
V |
(16.7% x p x IF(AV) < I < p x IF(AV)), TJ = TJ max. |
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VF(TO)2 |
High level of threshold voltage |
1.17 |
(I > p x IF(AV)), TJ = TJ max. |
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rf1 |
Low level of forward slope resistance |
0.62 |
mW |
(16.7% x p x IF(AV) < I < p x IF(AV)), TJ = TJ max. |
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rf2 |
High level of forward slope resistance |
0.29 |
(I > p x IF(AV)), TJ = TJ max. |
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VFM |
Max. forward voltage |
1.38 |
V |
Ipk= 785A, TJ = 25°C, tp = 400 µs square pulse |
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Recovery Characteristics
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Test conditions |
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Max. values @ TJ = 125°C |
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Code |
TJ = 25 C |
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typical trr |
Ipk |
di/dt |
Vr |
trr |
Qrr |
Irr |
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@ 25% IRRM |
Square Pulse |
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@ 25% IRRM |
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(ms) |
(A) |
(A/ms) |
(V) |
(ms) |
(mC) |
(A) |
S15 |
1.5 |
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2.9 |
90 |
44 |
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750 |
25 |
- 30 |
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S20 |
2.0 |
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3.2 |
107 |
46 |
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