International Rectifier SD200R16MBV, SD200R16MSV, SD200R16MV, SD200R16PBV, SD200R16PSV Datasheet

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International Rectifier SD200R16MBV, SD200R16MSV, SD200R16MV, SD200R16PBV, SD200R16PSV Datasheet

Bulletin I2080/A

SD200N/R SERIES

STANDARD RECOVERY DIODES

Features

Wide current range

High voltage ratings up to 2400V

High surge current capabilities

Stud cathode and stud anode version Standard JEDEC types

Stud Version

200A

Typical Applications

Converters

Power supplies

Machine tool controls

High power drives

Medium traction applications

Major Ratings and Characteristics

Parameters

SD200N/R

Units

 

 

 

 

IF(AV)

 

200

A

 

@ TC

110

°C

 

 

 

 

IF(RMS)

 

314

A

IFSM

@ 50Hz

4700

A

 

@ 60Hz

4920

A

 

 

 

 

I2t

@ 50Hz

110

KA2s

 

 

 

 

 

@ 60Hz

101

KA2s

 

 

 

 

VRRM range

 

400 to 2400

V

 

 

 

 

TJ

 

- 40 to 180

°C

 

 

 

 

case style DO-205AC (DO-30)

SD200N/R Series

ELECTRICAL SPECIFICATIONS

Voltage Ratings

 

Voltage

VRRM , maximum repetitive

VRSM , maximum non-

IRRM max.

Type number

Code

peak reverse voltage

repetitive peak rev. voltage

@ TJ = TJ max.

 

 

V

V

mA

 

 

 

 

 

 

04

400

500

 

 

 

 

 

 

SD200N/R

08

800

900

15

 

 

 

12

1200

1300

 

 

 

16

1600

1700

 

 

20

2000

2100

 

 

24

2400

2500

 

 

 

 

 

 

Forward Conduction

 

 

 

Parameter

SD200N/R

Units

Conditions

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

IF(AV)

Max. average forward current

200

A

180° conduction, half sine wave

 

 

 

 

 

@ Case temperature

110

°C

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

IF(AV)

Max. average forward current

220

A

180° conduction, half sine wave

 

 

 

 

 

@ Case temperature

100

°C

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

IF(RMS)

Max. RMS forward current

314

A

DC @ 95°C case temperature

 

 

 

 

IFSM

Max. peak, one-cycle forward,

4700

 

 

t = 10ms

 

No voltage

 

 

 

 

 

 

 

non-repetitive surge current

4920

A

t = 8.3ms

 

reapplied

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

3950

t = 10ms

 

100% VRRM

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

4140

 

 

t = 8.3ms

 

reapplied

 

Sinusoidal half wave,

 

 

 

 

 

 

 

 

 

 

 

 

 

 

I

2 t

Maximum I2t for fusing

110

 

 

t = 10ms

 

No voltage

 

Initial T = T

J

max.

 

 

 

 

 

 

 

 

 

 

 

J

 

 

 

 

 

101

KA2s

 

t = 8.3ms

 

reapplied

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

78

 

t = 10ms

 

100% VRRM

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

71

 

 

t = 8.3ms

 

reapplied

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

I2 Öt

Maximum I2Öt for fusing

1100

KA2Ös

t = 0.1 to 10ms, no voltage reapplied

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

VF(TO)1

Low level value of threshold

0.90

 

 

(16.7% x p x IF(AV) < I < p x IF(AV)), TJ = TJ max.

 

 

 

voltage

 

 

 

 

 

 

V

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

VF(TO)2

High level value of threshold

1.00

(I > p x IF(AV)),TJ = TJ max.

 

 

 

 

 

 

 

 

 

 

 

 

 

voltage

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

rf1

Low level value of forward

0.79

 

 

(16.7% x p x IF(AV) < I < p x IF(AV)), TJ = TJ max.

 

 

 

slope resistance

 

 

 

 

 

 

mW

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

rf2

High level value of forward

0.64

 

(I > p x IF(AV)),TJ = TJ max.

 

 

 

 

 

 

 

 

 

 

 

 

 

slope resistance

 

 

 

 

 

 

 

 

 

 

 

 

 

 

VFM

Max. forward voltage drop

1.40

V

Ipk= 630A, TJ = TJ max, tp = 10ms sinusoidal wave

SD200N/R Series

Thermal and Mechanical Specifications

 

Parameter

SD200N/R

Units

Conditions

 

 

 

 

 

TJ

Max. junction operating temperature range

-40 to 180

°C

 

Tstg

Max. storage temperature range

-55 to 200

 

 

 

RthJC

Max. thermal resistance, junction to case

0.23

K/W

DC operation

RthCS

Max. thermal resistance, case to heatsink

0.08

Mounting surface, smooth, flat and greased

 

T

Max. allowed mounting torque ±10%

14

Nm

Not lubricated threads

 

 

 

 

 

wt

Approximate weight

120

g

 

 

 

 

 

 

 

Case style

DO-205AC(DO-30)

See Outline Table

 

 

 

 

 

RthJC Conduction

(The following table shows the increment of thermal resistence RthJC when devices operate at different conduction angles than DC)

Conduction angle

Sinusoidal conduction

Rectangular conduction

Units

Conditions

 

 

 

 

 

180°

0.041

0.030

 

T J = TJ max.

120°

0.049

0.051

 

 

 

 

 

K/W

 

90°

0.063

0.068

 

 

 

 

 

 

 

 

60°

0.093

0.096

 

 

 

 

 

 

 

30°

0.156

0.157

 

 

Ordering Information Table

Device Code

SD

20

0

N

24

P

B

C

1

2

3

4

5

6

7

8

1 - Diode

2- Essential part number

3- 0 = Standard recovery

4- N = Stud Normal Polarity (Cathode to Stud) R = Stud Reverse Polarity (Anode to Stud)

5- Voltage code: Code x 100 = VRRM (See Voltage Ratings table)

6- P = Stud base DO-205AC (DO-30) 1/2" 20UNF-2A

M = Stud base DO-205AC (DO-30) M12 X 1.75

7- B = Flag top terminal (for Cathode/ Anode Leads) S = Isolated lead with silicone sleeve

(Red = Reverse Polarity; Blue = Normal Polarity) None = Non isolated lead

8- C = Ceramic Housing (over 1600V)

V = Glass-metal seal (only up to 1600V)

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