International Rectifier ST083S12PFK2, ST083S12PFK1L, ST083S12PFK1, ST083S12PFK0, ST083S10PFK2L Datasheet

Bulletin I25185/B

ST083S SERIES

INVERTER GRADE THYRISTORS

Stud Version

		Features	85A
		All diffused design
		Center amplifying gate
		Guaranteed high dv/dt
		Guaranteed high di/dt
		High surge current capability
		Low thermal impedance
		High speed performance

Typical Applications

Inverters

Choppers

Induction heating

All types of force-commutated converters

Major Ratings and Characteristics

Parameters		ST083S	Units
IT(AV)		85	A
	@ TC	85	°C
IT(RMS)		135	A
ITSM	@ 50Hz	2450	A
	@ 60Hz	2560	A
I2t	@ 50Hz	30	KA2s
	@ 60Hz	27	KA2s
VDRM/VRRM		400 to 1200	V
tq range (*)		10 to 30	µs
TJ		- 40 to 125	°C

(*)tq = 10 to 20µs for 400 to 800V devices tq = 15 to 30µs for 1000 to 1200V devices

case style TO-209AC (TO-94)

ST083S Series

ELECTRICAL SPECIFICATIONS

Voltage Ratings

		Voltage	VDRM/VRRM, maximum	VRSM , maximum	IDRM/IRRM max.
	Type number	Code	repetitive peak voltage	non-repetitive peak voltage	@ TJ = TJ max.
			V	V	mA
		04	400	500
	ST083S	08	800	900	30
		10	1000	1100
		12	1200	1300

Current Carrying Capability

Frequency								ITM											ITM											ITM				Units
			180oel											180oel												100ms
50Hz		210					120				330								270					2540						1930
400Hz		200					120				350								210					1190						810
1000Hz		150					80				320								190					630						400				A
2500Hz		70					25				220								85					250						100
Recovery voltage Vr		50					50				50								50					50						50				V
Voltage before turn-on Vd			VDRM											VDRM												VDRM
Rise of on-state currentdi/dt		50					50				-								-					-						-				A/ms
Case temperature		60					85				60								85					60						85				°C
Equivalent values for RC circuit			22W / 0.15µF									22W / 0.15µF												22W / 0.15µF

On-state Conduction

	Parameter	ST083S	Units	Conditions
IT(AV)	Max. average on-state current	85	A	180° conduction, half sine wave
	@ Case temperature	85	°C
IT(RMS)	Max. RMS on-state current	135		DC @ 77°C case temperature
ITSM	Max. peak, one half cycle,	2450		t = 10ms		No voltage
	non-repetitive surge current	2560	A	t = 8.3ms		reapplied
		2060		t = 10ms		100% VRRM
		2160		t = 8.3ms		reapplied	Sinusoidal half wave,
I2 t	Maximum I2t for fusing	30		t = 10ms		No voltage	Initial T = T	J	max
							J
		27	KA2s	t = 8.3ms		reapplied
		21		t = 10ms		100% VRRM
		19		t = 8.3ms		reapplied
I2 Öt	Maximum I2Öt for fusing	300	KA2Ös	t = 0.1 to 10ms, no voltage reapplied

											ST083S Series
On-state Conduction
		Parameter	ST083S			Units	Conditions
	VTM	Max. peak on-state voltage	2.15				ITM= 300A, TJ = TJ max, tp = 10ms sine wave pulse
VT(TO)1		Low level value of threshold	1.46				(16.7% x π x IT(AV) < I < π x IT(AV)), TJ = TJ max.
		voltage				V
	VT(TO)2	High level value of threshold	1.52				(I > π x IT(AV)), TJ = TJ max.
		voltage
	r t1	Low level value of forward	2.32				(16.7% x π x IT(AV) < I < π x IT(AV)), TJ = TJ max.
		slope resistance				mΩ
	r t2	High level value of forward	2.34				(I >			π	x IT(AV)), TJ = TJ max.
		slope resistance
	IH	Maximum holding current	600			mA	TJ = 25°C, I T > 30A
	IL	Typical latching current	1000				TJ = 25°C, V A= 12V, Ra = 6Ω, IG= 1A
Switching
		Parameter	ST083S			Units	Conditions
	di/dt	Max. non-repetitive rate of rise	1000			A/µs	TJ = TJ max, VDRM = rated VDRM
		of turned-on current					ITM = 2 x di/dt
	td	Typical delay time	0.80				TJ= 25°C, V DM = rated VDRM, ITM = 50A DC, tp= 1µs
						µs	Resistive load, Gate pulse: 10V, 5Ω source
			Min		Max		TJ = TJ max, ITM = 100A, commutating di/dt = 10A/µs
	tq	Max. turn-off time (*)	10		30
							V	R	= 50V, t = 200µs, dv/dt: see table in device code
											p
(*) tq = 10 to 20µs for 400 to 800V devices; tq = 15 to 30µs for 1000 to 1200V devices.
Blocking
		Parameter	ST083S			Units	Conditions
	dv/dt	Maximum critical rate of rise of	500			V/ μs	TJ = TJ max., linear to 80% VDRM, higher value
		off-state voltage					available on request
	IRRM	Max. peak reverse and off-state	30			mA	TJ = TJ max, rated VDRM/VRRM applied
	IDRM	leakage current
Triggering
		Parameter	ST083S			Units	Conditions
	PGM	Maximum peak gate power	40			W	TJ = TJ max, f = 50Hz, d% = 50
	PG(AV)	Maximum average gate power	5
	IGM	Max. peak positive gate current	5			A	TJ = TJ max, tp ≤ 5ms
	+VGM	Maximum peak positive	20
		gate voltage				V	TJ = TJ max, tp ≤ 5ms
	-VGM	Maximum peak negative	5
		gate voltage
	IGT	Max. DC gate current required	200			mA
		to trigger
							TJ = 25°C, V A = 12V, Ra = 6Ω
	VGT	Max. DC gate voltage required	3			V
		to trigger
	IGD	Max. DC gate current not to trigger	20			mA	TJ = TJ max, rated VDRM applied
	VGD	Max. DC gate voltage not to trigger	0.25			V