International Rectifier ST110S16P2L, ST110S16P2, ST110S16P1L, ST110S16P1, ST110S16P0L Datasheet

Bulletin I25167/B

ST110S SERIES

PHASE CONTROL THYRISTORS

Features

Center gate

Hermetic metal case with ceramic insulator

(Also available with glass-metal seal up to 1200V)

International standard case TO-209AC (TO-94)

Threaded studs UNF 1/2 - 20UNF2A

Compression Bonded Encapsulation for heavy duty operations such as severe thermal cycling

Stud Version

110A

TypicalApplications

DC motor controls

Controlled DC power supplies

AC controllers

Major Ratings and Characteristics

Parameters			ST110S	Units
IT(AV)			110	A
	@ TC		90	°C
IT(RMS)			175	A
ITSM	@ 50Hz		2700	A
	@ 60Hz		2830	A
I2t	@ 50Hz		36.4	KA2s
	@ 60Hz		33.2	KA2s
VDRM/VRRM			400 to 1600	V
tq	typical		100	µs
TJ			- 40 to 125	°C

case style TO-209AC (TO-94)

ST110S Series

ELECTRICAL SPECIFICATIONS

Voltage Ratings

	Voltage	VDRM/VRRM, max. repetitive	VRSM , maximum non-	IDRM/IRRM max.
Type number	Code	peak and off-state voltage	repetitive peak voltage	@ TJ = TJ max
		V	V	mA
	04	400	500
	08	800	900
ST110S	12	1200	1300	20
	14	1400	1500
	16	1600	1700

On-state Conduction

		Parameter	ST110S		Units		Conditions
	IT(AV)	Max. average on-state current	110		A		180° conduction, half sine wave
		@ Case temperature	90		°C
	IT(RMS)	Max. RMS on-state current	175		A		DC @ 85°C case temperature
	ITSM	Max. peak, one-cycle	2700				t = 10ms	No voltage
		non-repetitive surge current	2830				t = 8.3ms	reapplied
					A
			2270				t = 10ms	100% VRRM
			2380				t = 8.3ms	reapplied		Sinusoidal half wave,
I2t		Maximum I2t for fusing	36.4				t = 10ms	No voltage		Initial TJ = TJ max.
			33.2		KA2s		t = 8.3ms	reapplied
			25.8				t = 10ms	100% VRRM
			23.5				t = 8.3ms	reapplied
	I2Öt	Maximum I2Öt for fusing	364		KA2Ös		t = 0.1 to 10ms, no voltage reapplied
	VT(TO)1	Low level value of threshold	0.90				(16.7% x p x IT(AV) < I < p x IT(AV)), TJ = TJ max.
		voltage
					V
	VT(TO)2	High level value of threshold	0.92				(I > p x IT(AV)),TJ = TJ max.
		voltage
	rt1	Low level value of on-state	1.79				(16.7% x p x IT(AV) < I < p x IT(AV)), TJ = TJ max.
		slope resistance
					mW
	rt2	High level value of on-state	1.81				(I > p x IT(AV)),TJ = TJ max.
		slope resistance
	VTM	Max. on-state voltage	1.52		V		Ipk= 350A, TJ = TJ max, tp = 10ms sine pulse
	IH	Maximum holding current	600		mA		TJ = 25°C, anode supply 12V resistive load
	IL	Typical latching current	1000

Switching

		Parameter	ST110S	Units	Conditions
	di/dt	Max. non-repetitive rate of rise	500	A/µs	Gate drive 20V, 20W, tr £ 1µs
		of turned-on current			TJ = TJ max, anode voltage £ 80% VDRM
	td	Typical delay time	2.0		Gate current 1A, dig/dt = 1A/µs
				µs	Vd = 0.67% VDRM, TJ = 25°C
	tq	Typical turn-off time	100		ITM = 100A, TJ = TJ max, di/dt = 10A/µs, VR = 50V
					dv/dt = 20V/µs, Gate 0V 100W, tp = 500µs

										ST110S Series
	Blocking
		Parameter	ST110S				Units	Conditions
	dv/dt	Maximum critical rate of rise of		500			V/µs	TJ = TJ max. linear to 80% rated VDRM
			off-state voltage
	IRRM	Max. peak reverse and off-state		20			mA	TJ = TJ max, rated VDRM/VRRM applied
	IDRM	leakage current
Triggering
		Parameter	ST110S				Units	Conditions
	PGM	Maximum peak gate power		5			W	TJ = TJ max, tp ≤ 5ms
	PG(AV)	Maximum average gate power		1				TJ = TJ max, f = 50Hz, d% = 50
	IGM	Max. peak positive gate current		2.0			A	TJ = TJ max, tp ≤ 5ms
	+VGM	Maximum peak positive		20
		gate voltage
							V	TJ = TJ max, tp ≤ 5ms
	-VGM	Maximum peak negative		5.0
		gate voltage
			TYP.		MAX.
	IGT	DC gate current required						TJ = - 40°C
			180		-
		to trigger	90		150		mA	TJ = 25°C		Max. required gate trigger/ cur-
			40		-			TJ = 125°C
										rent/ voltage are the lowest value
										which will trigger all units 12V
	VGT	DC gate voltage required	2.9		-			TJ = - 40°C
										anode-to-cathode applied
		to trigger	1.8		3.0		V	TJ = 25°C
			1.2		-			TJ = 125°C
	IGD	DC gate current not to trigger		10			mA			Max. gate current/ voltage not to
								TJ = TJ max		trigger is the max. value which
	VGD	DC gate voltage not to trigger	0.25				V			will not trigger any unit with rated
										VDRM anode-to-cathode applied
	Thermal and Mechanical Specification
		Parameter	ST110S				Units	Conditions
	TJ	Max. operating temperature range	-40 to 125				°C
	Tstg	Max. storage temperature range	-40 to 150
	RthJC	Max. thermal resistance,		0.195				DC operation
		junction to case
							K/W
	RthCS	Max. thermal resistance,		0.08				Mounting surface, smooth, flat and greased
		case to heatsink
	T	Mounting torque, ± 10%		15.5				Non lubricated threads
				(137)			Nm
				14			(lbf-in)	Lubricated threads
				(120)
	wt	Approximate weight		130			g
		Case style	TO - 209AC (TO-94)					See Outline Table