HIT BB302M Datasheet
BB302M
Build in Biasing Circuit MOS FET IC
VHF RF Amplifier
Features
• Build in Biasing Circuit; To reduce using parts cost & PC board space.
• Low noise characteristics;
(NF = 1.7 dB typ. at f = 200 MHz)
• Withstanding to ESD;
Build in ESD absorbing diode. Withstand up to 240V at C=200pF, Rs=0 conditions.
• Provide mini mold packages; MPAK-4(SOT-143mod)
ADE-208-572 A (Z)
2nd. Edition
September 1997
Outline
MPAK-4
2
3
1
4
• Note 1 Marking is “BW–”.
• Note 2 BB302M is individual type number of HITACHI BBFET.
1. Source
2. Gate1
3. Gate2
4. Drain
BB302M
G
G
G1S
G2S
S
G2S
S
G1S
S
G
S
G
G2S
S
G
Absolute Maximum Ratings (Ta = 25°C)
Item Symbol Ratings Unit
Drain to source voltage V
Gate1 to source voltage V
Gate2 to source voltage V
Drain current I
DS
G1S
G2S
D
Channel power dissipation Pch 150 mW
Channel temperature Tch 150 °C
Storage temperature Tstg –55 to +150 °C
Electrical Characteristics (Ta = 25°C)
Item Symbol Min Typ Max Unit Test Conditions
Drain to source breakdown
V
(BR)DSS
voltage
Gate1 to source breakdown
V
(BR)G1SS
voltage
Gate2 to source breakdown
V
(BR)G2SS
voltage
Gate1 to source cutoff current I
Gate2 to source cutoff current I
Gate1 to source cutoff voltage V
Gate2 to source cutoff voltage V
Drain current I
G1SS
G2SS
G1S(off)
G2S(off)
D(op)
Forward transfer admittance |yfs| 15 20 — mS V
Input capacitance c
Output capacitance c
Reverse transfer capacitance c
iss
oss
rss
Power gain PG 22 26 — dB V
Noise figure NF — 1.7 2.2 dB RG = 120kΩ
12——V I
+10 — — V I
±10——V I
— — +100 nA V
——±100 nA V
0.4 — 1.0 V V
0.4 — 1.0 V V
9 1318mAV
2.2 3.0 4.0 pF VDS = 9V, VG1 = 9V
0.8 1.1 1.5 pF V
— 0.017 0.04 pF f = 1MHz
12 V
+10
V
– 0
±10 V
25 mA
= 200µA
D
V
= V
G1S
= +10µA
1
V
= VDS = 0
G2S
= ±10µA
2
V
= VDS = 0
G1S
= +9V
V
= VDS = 0
G2S
= ±9V
V
= VDS = 0
G1S
= 9V, V
D
I
= 100µA
D
= 9V, V
D
I
= 100µA
D
= 9V, V
D
V
= 6V, RG = 120kΩ
G2S
= 9V, V
D
V
=6V
R
= 120kΩ, f = 1kHz
G
=6V, RG = 120kΩ
G2S
= 9V, V
D
V
=6V
G2S
f = 200MHz
G2S
= 0
1
1
1
= 6V
= 9V
= 9V
= 9V
= 9V
2
Main Characteristics
BB302M
Test Circuit for Operating Items (I , |yfs|, Ciss, Coss, Crss, NF, PG)
V
G2 V
Gate 2
Drain
A
I
D
D(op)
Gate 1
Source
R
G
G1
Application Circuit
V = 6 to 0.3 V
AGC
BBFET
V = 9 V
DS
RFC
Output
Input
R
G
V = 9 V
GG
3
BB302M
Maximum Channel Power
200
150
100
50
Channel Power Dissipation Pch (mW)
0
Dissipation Curve
50 100 150 200
Ambient Temperature Ta (°C)
25
Typical Output Characteristics
V = 6 V
G2S
V = V
G1 DS
20
D
15
10
Drain Current I (mA)
5
0
246810
Drain to Source Voltage V (V)
Ω
Ω
56 k
68 k
82 k
100 k
120 k
150 k
220 k
G
R = 270 k
DS
Ω
Ω
180 k
Ω
Ω
Ω
Ω
Ω
Drain Current vs.
Gate2 to Source Voltage
25
Ω
20
D
56 k
15
10
Drain Current I (mA)
5
0
1.2 2.4 3.8 4.8 6.0
R = 220 k
V = V = 9 V
DS
Gate2 to Source Voltage V (V)
G
68 k
82 k
100 k
120 k
150 k
180 k
200 k
G1
Ω
Ω
Ω
Ω
G2S
Drain Current vs. Gate1 Voltage
20
V = 9 V
16
DS
R = 100 k
G
Ω
6 V
5 V
4 V
Ω
D
12
3 V
2 V
Ω
8
Ω
Drain Current I (mA)
Ω
4
0
246810
Gate1 Voltage V (V)
V = 1 V
G2S
G1
4
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