4AK19
Silicon N Channel MOS FET
High Speed Power Switching
ADE-208-727 (Z) 1st. Edition February 1999
Features
•Low on-resistance
N Channel: RDS(on) ≤ 0.5 Ω, VGS = 10 V, ID = 2.5 A RDS(on) ≤ 0.6 Ω, VGS = 4 V, ID = 2.5 A
•4 V gate drive devices.
•High density mounting
Outline
SP-10
3 |
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1 2 |
3 4 5 6 |
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5 |
7 |
9 |
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7 8 9 |
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D |
D |
D |
D |
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10 |
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4 |
6 |
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8 |
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G |
G |
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G |
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2 G |
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1, 10. Source |
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1 S |
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S 10 |
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2, 4, 6, 8. Gate |
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3, 5, 7, 9. Drain |
4AK19
Absolute Maximum Ratings (Ta = 25°C)
Item |
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Symbol |
Ratings |
Unit |
Drain to source voltage |
VDSS |
120 |
V |
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Gate to source voltage |
VGSS |
±20 |
V |
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Drain current |
ID |
5 |
A |
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Drain peak current |
Note1 |
10 |
A |
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ID(pulse) |
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Body-drain diode reverse drain current |
IDR |
5 |
A |
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Channel dissipation |
Pch(Tc = 25°C) Note2 |
28 |
W |
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Channel dissipation |
Pch Note2 |
3.5 |
W |
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Channel temperature |
Tch |
150 |
°C |
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Storage temperature |
Tstg |
–55 to +150 |
°C |
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Note: 1. |
PW ≤ 10 µs, duty cycle ≤ 1% |
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2. |
4 devices poeration |
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Electrical Characteristics (Ta = 25°C) |
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Item |
Symbol |
Min |
Typ |
Max |
Unit |
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Test Conditions |
Drain to source breakdown voltage |
V(BR)DSS |
120 |
— |
— |
V |
I |
D = 10 mA, VGS = 0 |
Gate to source breakdown voltage |
V(BR)GSS |
±20 |
— |
— |
V |
I |
G = ±100 µA, VDS = 0 |
Zero gate voltege drain current |
IDSS |
— |
— |
100 |
µA |
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VDS = 100 V, VGS = 0 |
Gate to source leak current |
IGSS |
— |
— |
±10 |
µA |
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VGS = ±16 V, VDS = 0 |
Gate to source cutoff voltage |
VGS(off) |
1.0 |
— |
2.0 |
V |
I D = 1 mA, VDS = 10 V |
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Static drain to source on state |
RDS(on) |
— |
0.3 |
0.5 |
Ω |
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ID = 2.5 A, VGS = 10 V Note3 |
resistance |
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Static drain to source on state |
RDS(on) |
— |
0.35 |
0.6 |
Ω |
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ID = 2.5 A, VGS = 4 V Note3 |
resistance |
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Forward transfer admittance |
|yfs| |
3 |
5 |
— |
S |
I D = 2.5 A, VDS = 10 V Note3 |
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Input capacitance |
Ciss |
— |
25 |
— |
pF |
V |
DS = 10 V |
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Output capacitance |
Coss |
— |
140 |
— |
pF |
V |
GS = 0 |
Reverse transfer capacitance |
Crss |
— |
3 |
— |
pF |
f = 1 MHz |
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Gate series resistance |
Rg |
— |
2.5 |
— |
k Ω |
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VDS = 0, VGS = 0, f = 1 MHz |
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Turn-on delay time |
td(on) |
— |
0.3 |
— |
µs |
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VGS = 10 V, ID = 2.5 A |
Rise time |
tr |
— |
0.45 |
— |
µs |
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RL = 12 Ω |
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Turn-off delay time |
td(off) |
— |
6.6 |
— |
µs |
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Fall time |
tf |
— |
1.4 |
— |
µs |
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Body–drain diode forward voltage |
VDF |
— |
1.1 |
— |
V |
I |
F = 5 A, VGS = 0 |
Body–drain diode reverse |
trr |
— |
600 |
— |
ns |
I |
F = 5 A, VGS = 0 |
recovery time |
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diF/ dt = 50A/ µs |
Note: 3. Pulse test
2
4AK19
Main Characteristics
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8 |
Maximum Channel Dissipation Curve |
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46 |
Maximum Channel Dissipation Curve |
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Condition : Channel dissipation of |
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(W) |
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Condition : Channel dissipation of |
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each die is idetical |
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each die is idetical |
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Pch |
6 |
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Pch |
32 |
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Dissipation |
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4 Device Operation |
Dissipation |
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4 Device Operation |
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4 |
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3 Device Operation |
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28 |
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3 Device Operation |
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2 Device Operation |
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2 Device Operation |
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Channel |
2 |
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1 Device Operation |
Channel |
14 |
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1 Device Operation |
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0 |
50 |
100 |
150 |
200 |
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0 |
50 |
100 |
150 |
200 |
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Ambient Temperature |
Ta (°C) |
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Case Temperature |
Tc (°C) |
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Drain Current I D (A)
Maximum Safe Operation Area
50 |
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20 |
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10 |
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10 |
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PW |
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100 |
µs |
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5 |
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1 |
µs |
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= |
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DC |
10 |
ms |
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2 |
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ms |
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Operation |
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1 |
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(1shot) |
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0.5 |
Operation in |
(Tc |
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this area is |
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= |
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25°C) |
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0.2 |
limited by R DS(on) |
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0.1 |
Ta = 25 °C |
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0.05 |
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1 |
3 |
10 |
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30 |
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100 |
300 |
1000 |
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Drain to Source Voltage V DS (V) |
Drain Current I D (A)
5 |
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Typical Output Characteristics |
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10 V |
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Pulse Test |
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4 |
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4 V |
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3 V |
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1 |
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2.5 V |
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VGS = 2 V |
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4 |
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8 |
12 |
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16 |
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20 |
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Drain to Source Voltage |
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VDS (V) |
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3