HIT 2SK3233 Datasheet

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HIT 2SK3233 Datasheet

2SK3233

Silicon N Channel MOS FET

High Speed Power Switching

ADE-208-1369 (Z) 1st. Edition Mar. 2001

Features

Low on-resistance: RDS(on) = 1.1 Ω typ.

Low leakage current: IDSS = 1 µA max (at VDS = 500 V)

High speed switching: tf = 15 ns typ (at VGS = 10 V, VDD = 250 V, ID = 2.5 A)

Low gate charge: Qg = 15 nC typ (at VDD = 400 V, VGS = 10 V, ID = 5 A)

Avalanche ratings

Outline

TO–220CFM

D

G

1 2

 

 

 

 

3

1.

Gate

 

 

 

 

 

2.

Drain

 

S

 

3.

Source

 

 

 

 

2SK3233

Absolute Maximum Ratings (Ta = 25°C)

Item

Symbol

Ratings

Unit

Drain to source voltage

VDSS

500

V

Gate to source voltage

VGSS

±30

V

Drain current

ID

5

A

 

 

 

 

Drain peak current

Note1

20

A

ID (pulse)

Body-drain diode reverse drain

IDR

5

A

current

 

 

 

 

 

 

 

Body-drain diode reverse drain peak

Note1

20

A

IDR (pulse)

current

 

 

 

 

 

 

 

Avalanche current

Note3

5

A

IAP

Channel dissipation

Pch Note2

30

W

Channel to case Tehrmal Impedance

θ ch-c

4.17

°C/W

 

 

 

 

Channel temperature

Tch

150

°C

 

 

 

 

Storage temperature

Tstg

–55 to +150

°C

Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1%

2.Value at Tc = 25°C

3.Tch ≤ 150°C

2

 

 

 

 

 

 

 

 

 

 

2SK3233

 

Electrical Characteristics (Ta = 25°C)

 

 

 

 

 

 

 

 

 

Item

Symbol

Min

Typ

Max

Unit

 

 

 

Test Conditions

 

 

 

 

 

 

 

 

 

 

 

 

 

Drain to source breakdown

V(BR)DSS

500

V

I

D = 10 mA, VGS = 0

 

voltage

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Gate to source leak current

IGSS

±0.1

µA

 

 

 

VGS = ±30 V, VDS = 0

 

 

Zero gate voltage drain current

IDSS

1

µA

 

 

 

VDS = 500 V, VGS = 0

 

 

Gate to source cutoff voltage

VGS(off)

3.0

4.0

V

V DS = 10 V, ID = 1 mA

 

 

Static drain to source on state

RDS(on)

1.1

1.5

Ω

 

 

 

ID = 2.5 A, VGS = 10 V Note4

 

resistance

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Forward transfer admittance

|yfs|

3.0

4.5

S

I D = 2.5 A, VDS = 10 V Note4

 

 

 

 

 

 

 

 

 

 

 

 

 

Input capacitance

Ciss

580

pF

V

DS = 25 V

 

 

 

 

 

 

 

 

 

 

 

 

Output capacitance

Coss

70

pF

V

GS = 0

 

 

 

 

 

 

 

 

 

 

Reverse transfer capacitance

Crss

13

pF

f = 1 MHz

 

 

 

 

 

 

 

 

 

 

 

 

Turn-on delay time

td(on)

20

ns

I

D = 2.5 A

 

 

 

 

 

 

 

 

 

 

 

Rise time

tr

15

ns

V

GS = 10 V

 

 

 

 

 

 

 

 

 

L = 100 Ω

 

Turn-off delay time

td(off)

65

ns

R

 

 

 

 

 

 

 

 

 

 

Fall time

tf

15

ns

Rg = 10 Ω

 

 

 

 

 

 

 

 

 

 

 

Total gate charge

Qg

15

nC

V

DD = 400 V

 

 

 

 

 

 

 

 

 

 

 

Gate to source charge

Qgs

3

nC

V

GS = 10 V

 

 

 

 

 

 

 

 

 

 

 

Gate to drain charge

Qgd

8

nC

I

D = 5 A

 

 

 

 

 

 

 

 

 

 

Body-drain diode forward

VDF

0.85

1.3

V

I F = 5 A, VGS = 0

 

voltage

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Body-drain diode reverse

trr

400

ns

I

F = 5 A, VGS = 0

 

recovery time

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Body-drain diode reverse

Qrr

1.5

µC

 

 

 

diF/dt = 100 A/µs

 

recovery charge

 

 

 

 

 

 

 

 

 

 

Note: 4. Pulse test

3

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