2SK3233
Silicon N Channel MOS FET
High Speed Power Switching
ADE-208-1369 (Z) 1st. Edition Mar. 2001
Features
•Low on-resistance: RDS(on) = 1.1 Ω typ.
•Low leakage current: IDSS = 1 µA max (at VDS = 500 V)
•High speed switching: tf = 15 ns typ (at VGS = 10 V, VDD = 250 V, ID = 2.5 A)
•Low gate charge: Qg = 15 nC typ (at VDD = 400 V, VGS = 10 V, ID = 5 A)
•Avalanche ratings
Outline
TO–220CFM
D
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1 2 |
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3 |
1. |
Gate |
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2. |
Drain |
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3. |
Source |
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2SK3233
Absolute Maximum Ratings (Ta = 25°C)
Item |
Symbol |
Ratings |
Unit |
Drain to source voltage |
VDSS |
500 |
V |
Gate to source voltage |
VGSS |
±30 |
V |
Drain current |
ID |
5 |
A |
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Drain peak current |
Note1 |
20 |
A |
ID (pulse) |
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Body-drain diode reverse drain |
IDR |
5 |
A |
current |
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Body-drain diode reverse drain peak |
Note1 |
20 |
A |
IDR (pulse) |
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current |
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Avalanche current |
Note3 |
5 |
A |
IAP |
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Channel dissipation |
Pch Note2 |
30 |
W |
Channel to case Tehrmal Impedance |
θ ch-c |
4.17 |
°C/W |
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Channel temperature |
Tch |
150 |
°C |
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Storage temperature |
Tstg |
–55 to +150 |
°C |
Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1%
2.Value at Tc = 25°C
3.Tch ≤ 150°C
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2SK3233 |
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Electrical Characteristics (Ta = 25°C) |
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Item |
Symbol |
Min |
Typ |
Max |
Unit |
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Test Conditions |
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Drain to source breakdown |
V(BR)DSS |
500 |
— |
— |
V |
I |
D = 10 mA, VGS = 0 |
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voltage |
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Gate to source leak current |
IGSS |
— |
— |
±0.1 |
µA |
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VGS = ±30 V, VDS = 0 |
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Zero gate voltage drain current |
IDSS |
— |
— |
1 |
µA |
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VDS = 500 V, VGS = 0 |
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Gate to source cutoff voltage |
VGS(off) |
3.0 |
— |
4.0 |
V |
V DS = 10 V, ID = 1 mA |
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Static drain to source on state |
RDS(on) |
— |
1.1 |
1.5 |
Ω |
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ID = 2.5 A, VGS = 10 V Note4 |
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resistance |
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Forward transfer admittance |
|yfs| |
3.0 |
4.5 |
— |
S |
I D = 2.5 A, VDS = 10 V Note4 |
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Input capacitance |
Ciss |
— |
580 |
— |
pF |
V |
DS = 25 V |
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Output capacitance |
Coss |
— |
70 |
— |
pF |
V |
GS = 0 |
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Reverse transfer capacitance |
Crss |
— |
13 |
— |
pF |
f = 1 MHz |
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Turn-on delay time |
td(on) |
— |
20 |
— |
ns |
I |
D = 2.5 A |
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Rise time |
tr |
— |
15 |
— |
ns |
V |
GS = 10 V |
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L = 100 Ω |
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Turn-off delay time |
td(off) |
— |
65 |
— |
ns |
R |
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Fall time |
tf |
— |
15 |
— |
ns |
Rg = 10 Ω |
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Total gate charge |
Qg |
— |
15 |
— |
nC |
V |
DD = 400 V |
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Gate to source charge |
Qgs |
— |
3 |
— |
nC |
V |
GS = 10 V |
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Gate to drain charge |
Qgd |
— |
8 |
— |
nC |
I |
D = 5 A |
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Body-drain diode forward |
VDF |
— |
0.85 |
1.3 |
V |
I F = 5 A, VGS = 0 |
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voltage |
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Body-drain diode reverse |
trr |
— |
400 |
— |
ns |
I |
F = 5 A, VGS = 0 |
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recovery time |
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Body-drain diode reverse |
Qrr |
— |
1.5 |
— |
µC |
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diF/dt = 100 A/µs |
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recovery charge |
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Note: 4. Pulse test
3