HIT 2SK3076-S, 2SK3076-L Datasheet

2SK3076(L),2SK3076(S)

Silicon N Channel MOS FET

High Speed Power Switching

ADE-208-656 (Z) 1st. Edition Jun 1998

Features

•Low on-resistance

•High speed switching

•Low drive current.

•Built-in fast recovery diode (trr=120 ns)

Outline

LDPAK

4

4

D

G	1	2
		3
1 2	3	1.	Gate
		2.	Drain
S		3.	Source
		4.	Drain

2SK3076(L),2SK3076(S)

Absolute Maximum Ratings (Ta = 25°C)

Item		Symbol	Ratings	Unit
Drain to source voltage		VDSS	500	V
Gate to source voltage		VGSS	±30	V
Drain current		ID	7	A
Drain peak current		Note1	28	A
		ID(pulse)
Body-drain diode reverse drain current		IDR	7	A
Channel dissipation		Pch Note2	60	W
Channel temperature		Tch	150	°C
Storage temperature		Tstg	–55 to +150	°C
Note: 1.	PW ≤ 10µs, duty cycle ≤ 1 %
2.	Value at Tc = 25°C

Electrical Characteristics (Ta = 25°C)

Item	Symbol	Min	Typ	Max	Unit			Test Conditions
Drain to source breakdown voltage	V(BR)DSS	500	—	—	V	I		D = 10mA, VGS = 0
Gate to source breakdown voltage	V(BR)GSS	±30	—	—	V	I		G = ±100µA, VDS = 0
Gate to source leak current	IGSS	—	—	±10	µA			VGS = ±25V, VDS = 0
Zero gate voltege drain current	IDSS	—	—	250	µA			VDS = 400 V, VGS = 0
Gate to source cutoff voltage	VGS(off)	2.0	—	3.0	V	I D			= 1mA, VDS = 10V
Static drain to source on state	RDS(on)	—	0.7	0.9	Ω			ID	= 4A, VGS = 10VNote4
resistance
Forward transfer admittance	|yfs|	3.5	6.0	—	S	I D			= 4A, VDS = 10V Note4
Input capacitance	Ciss	—	1100	—	pF	V		DS = 10V
Output capacitance	Coss	—	310	—	pF	V		GS = 0
Reverse transfer capacitance	Crss	—	50	—	pF	f = 1MHz
Turn-on delay time	td(on)	—	15	—	ns	I		D =4A, VGS = 10V
Rise time	tr	—	55	—	ns	R		L	= 7.5Ω
Turn-off delay time	td(off)	—	100	—	ns
Fall time	tf	—	48	—	ns
Body–drain diode forward voltage	VDF	—	0.9	—	V	I		F = 7A, VGS = 0
Body–drain diode reverse	trr	—	120	—	ns	I		F = 7A, VGS = 0
recovery time								diF/ dt =100A/µs

Note: 4. Pulse test

2

2SK3076(L),2SK3076(S)

Main Characteristics

Power vs. Temperature Derating

Maximum Safe Operation Area

	80						100
(W)						(A)	30												10
																					µs
	60						10											100
Pch											PW
						D											1			µs
										DC		=						ms
						I
													10
							3
														ms
	40						1
ChannelDissipation						DrainCurrent					Operation					(1shot)
									Operation in
							0.3		this area is						(Tc		=	25°C)
	20						0.1		limited by R DS(on)
							0.03
								Ta = 25 °C
							0.01
	0	50	100	150	200		0.1		0.3	1			3				10			30		100
		Case Temperature		Tc (°C)				Drain to Source Voltage											V DS (V)

Drain Current I D (A)

20	Typical Output Characteristics						20	Typical Transfer Characteristics
	10 V		4 V
				6 V					–25°C
16						(A)	16				Ta = 25°C
			Pulse Test
12						D	12				75°C
						I
4				5 V		DrainCurrent	4
8							8
			VGS = 4 V							V DS = 20 V
										Pulse Test
0	10	20	30	40	50		0	2	4	6	8	10
	Drain to Source Voltage			VDS (V)				Gate to Source Voltage			V GS (V)

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