HA13155
33 W × 4-Channel BTL Power IC
ADE-207-187A (Z)
2nd Edition
Jul. 1999
Description
The HA13155 is four-channel BTL amplifier IC designed for car audio, featuring high output and low
distortion, and applicable to digital audio equipment. It provides 33 W output per channel, with a 13.7 V
power supply and at Max distortion.
Functions
• 4 ch BTL power amplifiers
• Built-in standby circuit
• Built-in muting circuit
• Built-in protection circuit (surge, T.S.D, and ASO)
Features
• Requires few external parts
• Popping noise minimized
• Low output noise
• Built-in high reliability protection circuit
• Pin to pin with HA13150A/HA13151/HA13152/HA13153
HA13155
Block Diagram
11
13
C11
0.1 µ/16 V
C9
14
IN V
STBY
2
IN-1
1
IN-2
IN-3
CC
Buffer & Mute-1
Buffer & Mute-2
Buffer & Mute-3
PV
18
CC
PVCC1
2
Amp-1
Amp-2
Amp-3
6
4400 µ/16 V
3
R1
2.2
4
5
R2
2.2C20.1 µ
7
R3
2.2
8
9
R4
2.2C40.1 µ
15
R5
2.2
16
C1
0.1 µ
C3
0.1 µ
C5
0.1 µ
V
CC
13.2 V
17
R6
2.2C60.1 µ
19
20
21
R7
2.2
0.1 µ
R8
2.2C80.1 µ
C7
R9
7.5 k
10
23
IN-4
MUTE
Buffer & Mute-4
Protector
(ASO, Surge, TSD)
12 22 TAB
10 µ/10 V
Amp-4
C10
C1 to C8 should be polyester film capacitors with no secondary resonance (non-inductive),
to assure stable operation.
Notes: Standby
1.
Power is turned on when a signal of
3.5 V or 0.05 mA is impressed at pin 2.
When pin 2 is open or connected to
5 V
2
37.5 k
23.5 k
Q1 ON
BIAS ON
GND, standby is turned on (output off).
Muting
2.
Muting is turned off (output on) when
a signal of 3.5 V or 0.2 mA is impressed
at pin 10.
When pin 10 is open or connected to
5 V
10
25 k
Q2 ON
MUTE ON
GND, muting is turned on (output off).
TAB (header of IC) connected to GND.3.
Unit R: Ω
C: F
↓
↓
2
Absolute Maximum Ratings
Item Symbol Rating Unit
Operating supply voltage V
Supply voltage when no signal*
Peak supply voltage*
Output current*
Power dissipation*
2
3
4
1
CC
VCC (DC) 26 V
VCC (PEAK) 50 V
IO (PEAK) 4 A
P
T
Junction temperature Tj 150 °C
Operating temperature Topr –30 to +85 °C
Storage temperature Tstg –55 to +125 °C
Notes: 1. Tolerance within 30 seconds.
2. Tolerance in surge pulse waveform.
3. Value per 1 channel.
4. Value when attached on the infinite heat sink plate at Ta = 25 °C.
The derating carve is as shown in the graph below.
100
18 V
83 W
HA13155
83 W
(W)
T
50
Power dissipation P
28 W
0
25
A: When heat sink is infinite (θj-a = 1.5°C/W)
B: When θf (thermal resistance of heat sink) = 3°C/W
(θj-a = 4.5°C/W)
A
B
50
85
100
Ambient temperature Ta (°C)
150
3
HA13155
Electrical Characteristics (VCC = 13.2 V, f = 1 kHz, RL = 4 Ω, Rg = 600 Ω, Ta = 25°C)
Item Symbol Min Typ Max Unit Test Conditions
Quiescent current I
Output offset voltage ∆V
Gain G
Gain difference between
channels
Rated output power Po — 19 — W VCC = 13.2 V
Max output power Pomax — 33 — W VCC = 13.7 V, RL = 4 Ω
Total harmonic distortion T.H.D. — 0.02 — % Po = 3 W
Output noise voltage WBN — 0.15 — mVrms Rg = 0 Ω
Ripple rejection SVR — 55 — dB Rg = 600 Ω, f = 120 Hz
Channel cross talk C.T. — 70 — dB Rg = 600 Ω
Input impedance Rin — 25 — kΩ
Standby current IQ2——10µA
Standby control voltage
(high)
Standby control voltage
(low)
Muting control voltage
(high)
Muting control voltage
(low)
Muting attenuation ATTM — 70 — dB Vout = 0 dBm
1 — 300 — mA Vin = 0
Q
–250 0 +250 mV
30.5 32 33.5 dB
–1.0 0 +1.0 dB
∆G
Q
V
V
THD = 10%, R
BW = 20 to 20 kHz
Vout = 0 dBm
V
STH
V
STL
V
MH
V
ML
3.5 — V
CC
0 — 1.5 V
3.5 — V
CC
0 — 1.5 V
V
V
= 4 Ω
L
4
Characteristics Curve
(mA)
Q
Quiescent current I
400
300
200
100
Quiescent current vs. Supply Voltage
0
8 101214161820
0
HA13155
Supply Voltage V
Output Power vs. Supply Voltage
70
RL = 4 Ω, f = 1 kHz
60
50
40
30
20
Output Power Po, Pomax (W)
10
0
0
8 101214161820
Supply Voltage V
(V)
CC
Pomax
Po(THD = 10 %)
(V)
CC
5
HA13155
Total Harmonic Distortion vs. Frequency
VCC = 13.2 V, RL = 4 Ω
2
1
0.5
0.2
0.1
0.05
Total Harmonic Distortion THD (%)
Po = 8.0 W (Ch1–Ch4)
0.02
0.01
20 50 100 200 500 1k 2k 5k510k 20k
Po = 1.5 W (Ch1–Ch4)
Frequency f (Hz)
Total Harmonic Distortion vs. Output Power
VCC = 13.2 V, RL = 4 Ω, f = 1 kHz
2
1
0.5
0.2
0.1
0.05
Total Harmonic Distortion THD (%)
0.02
0.01
0.02 0.05 0.1 0.2 0.5 1 2 5510 20
0.01
10 kHz (Ch1–Ch4)
1 kHz (Ch1–Ch4)
100 Hz (Ch1–Ch4)
Output Power Po (W)
6
Crosstalk vs. Frequency (1)
Input Ch1, VCC = 13.2 V, Vout = 0 dBm
70
60
Ch2
50
(dB)
T
Crosstalk C
Ch3
Ch4
40
30
20
10
0
20 50 100 200 500 1k 2k 5k8010k 20k
Frequency f (Hz)
HA13155
Crosstalk vs. Frequency (2)
Input Ch2, VCC = 13.2 V, Vout = 0 dBm
70
60
Ch1
50
(dB)
T
Crosstalk C
Ch3
Ch4
40
30
20
10
0
20 50 100 200 500 1k 2k 5k8010k 20k
Frequency f (Hz)
7
HA13155
Crosstalk vs. Frequency (3)
Input Ch3, VCC = 13.2 V, Vout = 0 dBm
70
60
Ch1
50
(dB)
T
Crosstalk C
Ch2
Ch4
40
30
20
10
0
20 50 100 200 500 1k 2k 5k8010k 20k
Frequency f (Hz)
Crosstalk vs. Frequency (4)
Input Ch4, VCC = 13.2 V, Vout = 0 dBm
70
60
Ch1
50
(dB)
T
Crosstalk C
Ch2
Ch3
40
30
20
10
0
20 50 100 200 500 1k 2k 5k8010k 20k
Frequency f (Hz)
8
Supply Voltage Rejection Ratio vs. Frequency
VCC = 13.2 V, RL = 4 Ω, Vripple = 0 dBm, Rg = 620 Ω
70
60
50
Ch1
40
Ch2
Ch3
Ch4
30
20
10
Supply Voltage Rejection Ratio SVR (dB)
0
20 50 100 200 500 1k 2k 5k8010k 20k
Frequency f (Hz)
HA13155
50k
Wide Band Noise vs. Signal Source Resistance
VCC = 13.2 V, RL = 4 Ω, Vik = 0
2
1
0.5
0.2
0.1
0.05
Wide Band Noise WBN (mV)
0.02
0.01
20 50 100 200 500 1k 2k 5k510k 20k
Mute OFF Ch1–Ch4
Mute ON Ch1–Ch4
Signal Source Resistance Rg (Ω)
50k
9
HA13155
Power Dissipation vs. Output Power
RL = 4 Ω, f = 1 kHz, 1ch operation
20
10
(W)
T
5
2
1
0.5
Power Dissipation P
0.2
0.1
0.02 0.05 0.1 0.2 0.5 1 2 55010 20
0.01
VCC = 13.2 V, RL = 4 Ω, Po = 10 W, 1ch operation
(W)
T
10
= 16 V (Ch1–Ch4)
V
CC
= 13.2 V (Ch1–Ch4)
V
CC
Output Power Po (W)
Power Dissipation vs. Frequency
Ch1–Ch4
10
5
Power Dissipation P
0
20 50 100 200 500 1k 2k 5k1510k 20k
Frequency f (Hz)
Gain vs. Frequency
40
VCC = 13.2 V, RL = 4 Ω, V
35
30
25
(dB)
V
20
15
Gain G
10
5
0
20 50 100 200 500 1k 2k 5k 10k 20k 50k 100k200k 500k
Frequency f (Hz)
OUT
= 0 dBm
Ch1–Ch4
HA13155
1M
11
HA13155
Package Dimensions
3.80 ± 0.05
17.50 ± 0.13
30.18 ± 0.25
19.81
4.32 ± 0.05
φ
3.80 ± 0.05
2.79
2 – R1.84 ± 0.19
10.70 ± 0.12
4.50 ± 0.12
+ 0.05
1.55
– 0.1
17.78 ± 0.254.14 ± 0.33
Unit: mm
1.12
0.70
+0.09
–0.1
0.25
27.94
231
M
1.27
+ 0.06
0.40
– 0.04
Hitachi Code
JEDEC
EIAJ
Weight
(reference value)
5.08
4.29
SP-23TE
Conforms
—
8.5 g
12
HA13155
Cautions
1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent,
copyright, trademark, or other intellectual property rights for information contained in this document.
Hitachi bears no responsibility for problems that may arise with third party’s rights, including
intellectual property rights, in connection with use of the information contained in this document.
2. Products and product specifications may be subject to change without notice. Confirm that you have
received the latest product standards or specifications before final design, purchase or use.
3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However,
contact Hitachi’s sales office before using the product in an application that demands especially high
quality and reliability or where its failure or malfunction may directly threaten human life or cause risk
of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation,
traffic, safety equipment or medical equipment for life support.
4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly
for maximum rating, operating supply voltage range, heat radiation characteristics, installation
conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used
beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable
failure rates or failure modes in semiconductor devices and employ systemic measures such as failsafes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other
consequential damage due to operation of the Hitachi product.
5. This product is not designed to be radiation resistant.
6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without
written approval from Hitachi.
7. Contact Hitachi’s sales office for any questions regarding this document or Hitachi semiconductor
products.
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Copyright ' Hitachi, Ltd., 1998. All rights reserved. Printed in Japan.
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13
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