HIT HA13154A, HA13153A Datasheet

HA13153A, HA13154A
15 W × 4-Channel BTL Power IC
ADE-207-181B (Z)
3rd Edition
Jul. 1999
Description
The HA13153A/HA13154A is high output and low distortion 4 ch BTL power IC designed for digital car audio.
Function
4 ch BTL power amplifiers
Built-in standby circuit
Built-in muting circuit
Built-in protection circuit (surge, T.S.D, and ASO)
Features
Few external parts lead to compact set-area possibility than HA13150A/HA13151/HA13152 (C: 3, R:
1)
Popping noise minimized
Low output noise
Built-in high reliability protection circuit
Pin to pin with HA13150A/HA13151/HA13152/HA13155
HA13153A, HA13154A
Block Diagram
STBY
2
IN-1
1
IN-2
11
IN-3
13
14
IN V
CC
Buffer & Mute-1
Buffer & Mute-2
Buffer & Mute-3
PV
18
CC
C2
0.1 µ/16 V
4400 µ/16 V
6
PVCC1
2
Amp-1
Amp-2
Amp-3
C1
3
4
5
7
8
9
15
16
V
CC
13.2 V
17
19
R1
7.5 k
10
23
IN-4
MUTE
Buffer & Mute-4
Protector (ASO, Surge, TSD)
12 22 TAB
10 µ/10 V
C3
Amp-4
20
21
C2 should be polyester film capacitors with no secondary resonance (non-inductive), to assure stable operation.
Notes: Standby
1. Power is turned on when a signal of
3.5 V or 0.05 mA is impressed at pin 2. When pin 2 is open or connected to
5 V
2
37.5 k
23.5 k
GND, standby is turned on (output off).
2.
Muting Muting is turned off (output on) when
5 V
10
a signal of 3.5 V or 0.2 mA is impressed at pin 10. When pin 10 is open or connected to
25 k
GND, muting is turned on (output off).
3.
TAB (header of IC) connected to GND.
Unit R:
Q1 ON
BIAS ON
Q2 ON
MUTE ON
C: F
2
HA13153A, HA13154A
Absolute Maximum Ratings
Item Symbol Rating Unit
Operating supply voltage V Supply voltage when no signal* Peak supply voltage* Output current* Power dissipation*
2
3
4
1
CC
VCC (DC) 26 V VCC (PEAK) 50 V IO (PEAK) 3 A P
T
Junction temperature Tj 150 °C Operating temperature Topr –30 to +85 °C Storage temperature Tstg –55 to +125 °C
Notes: 1. Tolerance within 30 seconds.
2. Tolerance in surge pulse waveform.
3. Value per 1 channel.
4. Value when attached on the infinite heat sink plate at Ta = 25 °C. The derating carve is as shown in the graph below.
100
18 V
83 W
83 W
(W)
T
50
Power dissipation P
28 W
0
25
A: When heat sink is infinite (θj-a = 1.5°C/W) B: When θf (thermal resistance of heat sink) = 3°C/W (θj-a = 4.5°C/W)
A
B
50
85
100
Ambient temperature Ta (°C)
150
3
HA13153A, HA13154A
Electrical Characteristics (VCC = 13.2 V, f = 1 kHz, RL = 4 , Rg = 600 , Ta = 25°C)
HA13153A
Item Symbol Min Typ Max Unit Test Conditions
Quiescent current I Output offset voltage V Gain G Gain difference between
channels Rated output power Po 15 W VCC = 13.2 V
Max output power Pomax 25 W VCC = 13.7 V, RL = 4 Total harmonic distortion T.H.D. 0.02 % Po = 3 W Output noise voltage WBN 0.15 mVrms Rg = 0
Ripple rejection SVR 55 dB Rg = 600 , f = 120 Hz Channel cross talk C.T. 70 dB Rg = 600
Input impedance Rin 25 k Standby current IQ2——10µA Standby control voltage
(high) Standby control voltage
(low) Muting control voltage
(high) Muting control voltage
(low) Muting attenuation ATTM 70 dB Vout = 0 dBm
1 350 mA Vin = 0
Q
–300 0 +300 mV
30.5 32 33.5 dB –1.0 0 +1.0 dB
G
Q
V
V
THD = 10%, R
BW = 20 to 20 kHz
Vout = 0 dBm
V
STH
V
STL
V
MH
V
ML
3.5 V
CC
0 1.5 V
3.5 V
CC
0 1.5 V
V
V
= 4
L
4
HA13153A, HA13154A
HA13154A
Item Symbol Min Typ Max Unit Test Conditions
Quiescent current I Output offset voltage V Gain G Gain difference between
channels Rated output power Po 15 W VCC = 13.2 V
Max output power Pomax 25 W VCC = 13.7 V, RL = 4 Total harmonic distortion T.H.D. 0.02 % Po = 3 W Output noise voltage WBN 0.25 mVrms Rg = 0
Ripple rejection SVR 45 dB Rg = 600 , f = 120 Hz Channel cross talk C.T. 60 dB Rg = 600
Input impedance Rin 25 kW Standby current IQ2——10µA Standby control voltage
(high) Standby control voltage
(low) Muting control voltage
(high) Muting control voltage
(low) Muting attenuation ATTM 60 dB Vout = 0 dBm
1 350 mA Vin = 0
Q
–300 0 +300 mV
38.5 40 41.5 dB –1.0 0 +1.0 dB
G
Q
V
V
THD = 10%, R
BW = 20 to 20 kHz
Vout = 0 dBm
V
STH
V
STL
V
MH
V
ML
3.5 V
CC
0 1.5 V
3.5 V
CC
0 1.5 V
V
V
= 4
L
5
HA13153A, HA13154A
Characteristics Curve
400
300
(mA)
Q
200
100
Quiescent current I
0
0
Quiescent current vs. Supply Voltage (HA13153A)
8 101214161820
Supply Voltage V
Output Power vs. Supply Voltage (HA13153A)
45
RL = 4 , f = 1 kHz
40 35 30 25 20 15 10
Output Power Po, Pomax (W)
5 0
8 101214161820
0
Supply Voltage V
(V)
CC
Pomax
Po(THD = 10 %)
(V)
CC
6
HA13153A, HA13154A
Total Harmonic Distortion vs. Frequency (HA13153A)
5
VCC = 13.2 V, RL = 4
2 1
0.5
0.2
0.1
0.05
Total Harmonic Distortion THD (%)
0.02
0.01
0.5
0.2
0.1
0.05
Total Harmonic Distortion THD (%)
0.02
Po = 8.0 W (Ch1–Ch4)
Po = 3.0 W (Ch1–Ch4)
20 50 100 200 500 1k 2k 5k
Frequency f (Hz)
Total Harmonic Distortion vs. Output Power (HA13153A)
5
VCC = 13.2 V, RL = 4 , f = 1 kHz
2 1
10 kHz (Ch1–Ch4)
1 kHz (Ch1–Ch4)
100 Hz (Ch1–Ch4)
10k 20k
0.01
0.02 0.05 0.1 0.2 0.5 1 2 5 Output Power Po (W)
10 20
7
HA13153A, HA13154A
80
70
60
50
(dB)
T
40
30
Crosstalk C
20
10
0
20 50 100 200 500 1k 2k 5k
Crosstalk vs. Frequency (HA13153A) (1)
Input Ch1, VCC = 13.2 V, Vout = 0 dBm
Ch2 Ch3 Ch4
10k 20k
Frequency f (Hz)
Crosstalk vs. Frequency (HA13153A) (2)
80
Input Ch2, VCC = 13.2 V, Vout = 0 dBm
70
60
Ch1
50
(dB)
T
Crosstalk C
Ch3 Ch4
40
30
20
10
0
20 50 100 200 500 1k 2k 5k
Frequency f (Hz)
10k 20k
8
Crosstalk vs. Frequency (HA13153A) (3)
80
Input Ch3, VCC = 13.2 V, Vout = 0 dBm
70
60
Ch1
50
(dB)
T
Crosstalk C
Ch2 Ch4
40
30
20
10
0
20 50 100 200 500 1k 2k 5k
Frequency f (Hz)
HA13153A, HA13154A
10k 20k
Crosstalk vs. Frequency (HA13153A) (4)
80
70
60
Input Ch4, VCC = 13.2 V, Vout = 0 dBm
50
(dB)
T
Crosstalk C
Ch1 Ch2
40
Ch3
30
20
10
0
20 50 100 200 500 1k 2k 5k
Frequency f (Hz)
10k 20k
9
HA13153A, HA13154A
Supply Voltage Rejection Ratio vs. Frequency (HA13153A)
80
VCC = 13.2 V, RL = 4 , Vripple = 0 dBm, Rg = 620
70
60
50
Ch1
40
Ch2 Ch3 Ch4
30
20
10
Supply Voltage Rejection Ratio SVR (dB)
0
20 50 100 200 500 1k 2k 5k
Frequency f (Hz)
10k 20k
50k
Wide Band Noise vs. Signal Source Resistance (HA13153A)
5
VCC = 13.2 V, RL = 4 , Vin = 0
2 1
0.5
0.2
0.1
0.05
Wide Band Noise WBN (mV)
0.02
0.01 20 50 100 200 500 1k 2k 5k
Mute OFF Ch1–Ch4
Mute ON Ch1–Ch4
Signal Source Resistance Rg ()
10k 20k
50k
10
(W)
T
HA13153A, HA13154A
Power Dissipation vs. Output Power (HA13153A)
500
RL = 4 , f = 1 kHz, 1ch operation
200 100
50
20 10
5
Power Dissipation P
= 16 V (Ch1–Ch4)
V
CC
= 13.2 V (Ch1–Ch4)
V
CC
2 1
0.02 0.05 0.1 0.2 0.5 1 2 5 Output Power Po (W)
Power Dissipation vs. Frequency (HA13153A)
15
VCC = 13.2 V, RL = 4 , Po = 10 W, 1ch operation
(W)
T
10
10 20
Ch1–Ch4
5
Power Dissipation P
0
20 50 100 200 500 1k 2k 5k
Frequency f (Hz)
10k 20k
11
HA13153A, HA13154A
40
VCC = 13.2 V, RL = 4 , V
35
30
25
(dB)
V
20
15
Gain G
10
5
0
20 50 100 200 500 1k 2k 5k 10k 20k 50k100k200k 500k
10
Gain vs. Frequency (HA13153A)
= 0 dBm
OUT
Ch1–Ch4
Frequency f (Hz)
1M
12
Quiescent current vs. Supply Voltage (HA13154A)
400
300
(mA)
Q
200
100
Quiescent current I
0
8 101214161820
0
HA13153A, HA13154A
Supply Voltage V
Output Power vs. Supply Voltage (HA13154A)
45
RL = 4 , f = 1 kHz
40 35 30 25 20 15 10
Output Power Po, Pomax (W)
5 0
8 101214161820
0
Supply Voltage V
(V)
CC
Pomax
Po(THD = 10 %)
(V)
CC
13
HA13153A, HA13154A
Total Harmonic Distortion vs. Frequency (HA13154A)
5
2 1
0.5
VCC = 13.2 V, RL = 4
0.2
0.1
0.05
Total Harmonic Distortion THD (%)
0.02
0.01 20 50 100 200 500
Total Harmonic Distortion vs. Output Power (HA13154A)
5
2
1
0.5
0.2
PO = 8.0 W (Ch1–Ch4)
PO = 3.0 W (Ch1–Ch4)
1 k 2 k 20 k10 k5 k
Frequency f (Hz)
VCC = 13.2 V, RL = 4
10 kHz (Ch1–Ch4)
14
0.1
0.05
Total Harmonic Distortion THD (%)
0.02
0.01
0.02 0.05 0.1 0.2 0.5
1 kHz (Ch1–Ch4)
100 kHz (Ch1-Ch4)
Output Power Po (W)
12 20105
Crosstalk vs. Frequency (HA13154A) (1)
80
Input Ch1, VCC = 13.2 V, Vout = 0 dB
70
60
HA13153A, HA13154A
50
(dB)
T
40
30
Crosstalk C
20
10
0
20 50 100 200 500
80
70
60
50
(dB)
T
40
Ch2 Ch3 Ch4
Crosstalk vs. Frequency (HA13154A) (2)
Input Ch2, VCC = 13.2 V, Vout = 0 dB
Ch1 Ch3 Ch4
1 k 2 k 20 k10 k5 k
Frequency f (Hz)
30
Crosstalk C
20
10
0
20 50 100 200 500
1 k 2 k 20 k10 k5 k
Frequency f (Hz)
15
HA13153A, HA13154A
80
Input Ch3, VCC = 13.2 V, Vout = 0 dB
70 60
Crosstalk vs. Frequency (HA13154A) (3)
50
(dB)
T
40 30
Crosstalk C
20
10
0
20 50 100 200 500
80
70
60
50
(dB)
T
40
Ch1 Ch2 Ch4
Crosstalk vs. Frequency (HA13154A) (4)
Input Ch4, VCC = 13.2 V, Vout = 0 dB
Ch1 Ch2 Ch3
1 k 2 k 20 k10 k5 k
Frequency f (Hz)
16
30
Crosstalk C
20
10
0
20 50 100 200 500
1 k 2 k 20 k10 k5 k
Frequency f (Hz)
Supply Voltage Rejection Ratio vs. Frequency (HA13154A)
80
VCC = 13.2 V, RL = 4 , Vripple = 0 dB
70
60
50
40
30
20
10
Supply Voltage Rejection Ratio SVR (dB)
0
20 50 100 200 500
Ch1 Ch2 Ch3 Ch4
1 k 2 k 20 k 50 k10 k5 k
Frequency f (Hz)
HA13153A, HA13154A
Wide Band Noise vs. Signal Source Resistance (HA13154A)
5
VCC = 13.2 V, RL = 4 , Vin = 0
2 1
0.5
0.2
0.1
0.05
Wide Band Noise WBN (mV)
0.02
0.01 20 50 100 200 500
Mute OFF Ch1–Ch4
Mute ON Ch1–Ch4
1 k 2 k 20 k 50 k10 k5 k
Signal Source Resistance Rg ()
17
HA13153A, HA13154A
500
200 100
(W)
T
50
20
Power Dissipation vs. Output Power (HA13154A)
RL = 4 , f = 1 kHz, 1ch operation
10
5
Power Dissipation P
= 16 V (Ch1–Ch4)
V
CC
= 13.2 V (Ch1–Ch4)
V
CC
2 1
0.02 0.05 0.1 0.2 0.5 1 2 5 Output Power Po (W)
Power Dissipation vs. Frequency (HA13154A)
VCC = 13.2 V, RL = 4 , Po = 10 W, 1ch operation
(W)
T
10
10 20
Ch1–Ch4
18
5
Power Dissipation P
0
20 50 100 200 500 1k 2k 5k1510k 20k
Frequency f (Hz)
50
45
40
35
(dB)
V
30
25
Gain G
20
15
10
HA13153A, HA13154A
Gain vs. Frequency (HA13154A)
VCC = 13.2 V, RL = 4 , V
20 50 100 200 500 1k 2k 5k 10k 20k 50k100k200k 500k
10
Frequency f (Hz)
OUT
= 0 dBm
Ch1–Ch4
1M
19
HA13153A, HA13154A
Package Dimensions
30.18 ± 0.25
4.32 ± 0.05
3.80 ± 0.05
17.50 ± 0.13
19.81
φ
3.80 ± 0.05
2.79
2 – R1.84 ± 0.19
10.70 ± 0.12
4.50 ± 0.12
+ 0.05
1.55
– 0.1
17.78 ± 0.254.14 ± 0.33
Unit: mm
1.12
0.70
+0.09 –0.1
0.25
27.94
231
M
1.27
+ 0.06
0.40
– 0.04
Hitachi Code JEDEC EIAJ Weight
(reference value)
5.08
4.29
SP-23TE Conforms —
8.5 g
20
HA13153A, HA13154A
Cautions
1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent, copyright, trademark, or other intellectual property rights for information contained in this document. Hitachi bears no responsibility for problems that may arise with third party’s rights, including intellectual property rights, in connection with use of the information contained in this document.
2. Products and product specifications may be subject to change without notice. Confirm that you have received the latest product standards or specifications before final design, purchase or use.
3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However, contact Hitachi’s sales office before using the product in an application that demands especially high quality and reliability or where its failure or malfunction may directly threaten human life or cause risk of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation, traffic, safety equipment or medical equipment for life support.
4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly for maximum rating, operating supply voltage range, heat radiation characteristics, installation conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable failure rates or failure modes in semiconductor devices and employ systemic measures such as fail­safes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other consequential damage due to operation of the Hitachi product.
5. This product is not designed to be radiation resistant.
6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without written approval from Hitachi.
7. Contact Hitachi’s sales office for any questions regarding this document or Hitachi semiconductor products.
Hitachi, Ltd.
Semiconductor & Integrated Circuits. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan Tel: Tokyo (03) 3270-2111 Fax: (03) 3270-5109
URL NorthAmerica : http:semiconductor.hitachi.com/
For further information write to:
Hitachi Semiconductor (America) Inc. 179 East Tasman Drive, San Jose,CA 95134 Tel: <1> (408) 433-1990 Fax: <1>(408) 433-0223
Europe : http://www.hitachi-eu.com/hel/ecg Asia (Singapore) : http://www.has.hitachi.com.sg/grp3/sicd/index.htm Asia (Taiwan) : http://www.hitachi.com.tw/E/Product/SICD_Frame.htm Asia (HongKong) : http://www.hitachi.com.hk/eng/bo/grp3/index.htm Japan : http://www.hitachi.co.jp/Sicd/indx.htm
Hitachi Europe GmbH Electronic components Group Dornacher Straβe 3 D-85622 Feldkirchen, Munich Germany Tel: <49> (89) 9 9180-0 Fax: <49> (89) 9 29 30 00
Hitachi Europe Ltd. Electronic Components Group. Whitebrook Park Lower Cookham Road Maidenhead Berkshire SL6 8YA, United Kingdom Tel: <44> (1628) 585000 Fax: <44> (1628) 778322
Hitachi Asia Pte. Ltd. 16 Collyer Quay #20-00 Hitachi Tower Singapore 049318 Tel: 535-2100 Fax: 535-1533
Hitachi Asia Ltd. Taipei Branch Office 3F, Hung Kuo Building. No.167, Tun-Hwa North Road, Taipei (105) Tel: <886> (2) 2718-3666 Fax: <886> (2) 2718-8180
Copyright ' Hitachi, Ltd., 1998. All rights reserved. Printed in Japan.
Hitachi Asia (Hong Kong) Ltd. Group III (Electronic Components) 7/F., North Tower, World Finance Centre, Harbour City, Canton Road, Tsim Sha Tsui, Kowloon, Hong Kong Tel: <852> (2) 735 9218 Fax: <852> (2) 730 0281 Telex: 40815 HITEC HX
21
Loading...