Wide Band Noise vs. Signal Source Resistance (HA13153A)
5
VCC = 13.2 V, RL = 4 Ω, Vin = 0
2
1
0.5
0.2
0.1
0.05
Wide Band Noise WBN (mV)
0.02
0.01
2050 100 200500 1k2k5k
Mute OFF Ch1–Ch4
Mute ON Ch1–Ch4
Signal Source Resistance Rg (Ω)
10k 20k
50k
10
(W)
T
HA13153A, HA13154A
Power Dissipation vs. Output Power (HA13153A)
500
RL = 4 Ω, f = 1 kHz, 1ch operation
200
100
50
20
10
5
Power Dissipation P
= 16 V (Ch1–Ch4)
V
CC
= 13.2 V (Ch1–Ch4)
V
CC
2
1
0.020.05 0.1 0.20.5125
Output Power Po (W)
Power Dissipation vs. Frequency (HA13153A)
15
VCC = 13.2 V, RL = 4 Ω, Po = 10 W, 1ch operation
(W)
T
10
1020
Ch1–Ch4
5
Power Dissipation P
0
2050 100 200500 1k2k5k
Frequency f (Hz)
10k 20k
11
HA13153A, HA13154A
40
VCC = 13.2 V, RL = 4 Ω, V
35
30
25
(dB)
V
20
15
Gain G
10
5
0
2050 100 200 500 1k 2k5k 10k 20k 50k100k200k 500k
10
Gain vs. Frequency (HA13153A)
= 0 dBm
OUT
Ch1–Ch4
Frequency f (Hz)
1M
12
Quiescent current vs. Supply Voltage (HA13154A)
400
300
(mA)
Q
200
100
Quiescent current I
0
8 101214161820
0
HA13153A, HA13154A
Supply Voltage V
Output Power vs. Supply Voltage (HA13154A)
45
RL = 4 Ω, f = 1 kHz
40
35
30
25
20
15
10
Output Power Po, Pomax (W)
5
0
8 101214161820
0
Supply Voltage V
(V)
CC
Pomax
Po(THD = 10 %)
(V)
CC
13
HA13153A, HA13154A
Total Harmonic Distortion vs. Frequency (HA13154A)
5
2
1
0.5
VCC = 13.2 V, RL = 4 Ω
0.2
0.1
0.05
Total Harmonic Distortion THD (%)
0.02
0.01
2050 100 200500
Total Harmonic Distortion vs. Output Power (HA13154A)
5
2
1
0.5
0.2
PO = 8.0 W (Ch1–Ch4)
PO = 3.0 W (Ch1–Ch4)
1 k 2 k20 k10 k5 k
Frequency f (Hz)
VCC = 13.2 V, RL = 4 Ω
10 kHz (Ch1–Ch4)
14
0.1
0.05
Total Harmonic Distortion THD (%)
0.02
0.01
0.020.05 0.1 0.20.5
1 kHz (Ch1–Ch4)
100 kHz (Ch1-Ch4)
Output Power Po (W)
1220105
Crosstalk vs. Frequency (HA13154A) (1)
80
Input Ch1, VCC = 13.2 V, Vout = 0 dB
70
60
HA13153A, HA13154A
50
(dB)
T
40
30
Crosstalk C
20
10
0
2050 100 200500
80
70
60
50
(dB)
T
40
Ch2
Ch3
Ch4
Crosstalk vs. Frequency (HA13154A) (2)
Input Ch2, VCC = 13.2 V, Vout = 0 dB
Ch1
Ch3
Ch4
1 k 2 k20 k10 k5 k
Frequency f (Hz)
30
Crosstalk C
20
10
0
2050 100 200500
1 k 2 k20 k10 k5 k
Frequency f (Hz)
15
HA13153A, HA13154A
80
Input Ch3, VCC = 13.2 V, Vout = 0 dB
70
60
Crosstalk vs. Frequency (HA13154A) (3)
50
(dB)
T
40
30
Crosstalk C
20
10
0
2050 100 200500
80
70
60
50
(dB)
T
40
Ch1
Ch2
Ch4
Crosstalk vs. Frequency (HA13154A) (4)
Input Ch4, VCC = 13.2 V, Vout = 0 dB
Ch1
Ch2
Ch3
1 k2 k20 k10 k5 k
Frequency f (Hz)
16
30
Crosstalk C
20
10
0
2050 100 200500
1 k2 k20 k10 k5 k
Frequency f (Hz)
Supply Voltage Rejection Ratio vs. Frequency (HA13154A)
80
VCC = 13.2 V, RL = 4 Ω, Vripple = 0 dB
70
60
50
40
30
20
10
Supply Voltage Rejection Ratio SVR (dB)
0
2050 100 200500
Ch1
Ch2
Ch3
Ch4
1 k 2 k20 k 50 k10 k5 k
Frequency f (Hz)
HA13153A, HA13154A
Wide Band Noise vs. Signal Source Resistance (HA13154A)
5
VCC = 13.2 V, RL = 4 Ω, Vin = 0
2
1
0.5
0.2
0.1
0.05
Wide Band Noise WBN (mV)
0.02
0.01
2050 100 200500
Mute OFF Ch1–Ch4
Mute ON Ch1–Ch4
1 k 2 k20 k 50 k10 k5 k
Signal Source Resistance Rg (Ω)
17
HA13153A, HA13154A
500
200
100
(W)
T
50
20
Power Dissipation vs. Output Power (HA13154A)
RL = 4 Ω, f = 1 kHz, 1ch operation
10
5
Power Dissipation P
= 16 V (Ch1–Ch4)
V
CC
= 13.2 V (Ch1–Ch4)
V
CC
2
1
0.020.05 0.1 0.20.5125
Output Power Po (W)
Power Dissipation vs. Frequency (HA13154A)
VCC = 13.2 V, RL = 4 Ω, Po = 10 W, 1ch operation
(W)
T
10
1020
Ch1–Ch4
18
5
Power Dissipation P
0
2050 100 200500 1k2k5k1510k 20k
Frequency f (Hz)
50
45
40
35
(dB)
V
30
25
Gain G
20
15
10
HA13153A, HA13154A
Gain vs. Frequency (HA13154A)
VCC = 13.2 V, RL = 4 Ω, V
2050 100 200 500 1k 2k5k 10k 20k 50k100k200k 500k
10
Frequency f (Hz)
OUT
= 0 dBm
Ch1–Ch4
1M
19
HA13153A, HA13154A
Package Dimensions
30.18 ± 0.25
4.32 ± 0.05
3.80 ± 0.05
17.50 ± 0.13
19.81
φ
3.80 ± 0.05
2.79
2 – R1.84 ± 0.19
10.70 ± 0.12
4.50 ± 0.12
+ 0.05
1.55
– 0.1
17.78 ± 0.254.14 ± 0.33
Unit: mm
1.12
0.70
+0.09
–0.1
0.25
27.94
231
M
1.27
+ 0.06
0.40
– 0.04
Hitachi Code
JEDEC
EIAJ
Weight
(reference value)
5.08
4.29
SP-23TE
Conforms
—
8.5 g
20
HA13153A, HA13154A
Cautions
1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent,
copyright, trademark, or other intellectual property rights for information contained in this document.
Hitachi bears no responsibility for problems that may arise with third party’s rights, including
intellectual property rights, in connection with use of the information contained in this document.
2. Products and product specifications may be subject to change without notice. Confirm that you have
received the latest product standards or specifications before final design, purchase or use.
3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However,
contact Hitachi’s sales office before using the product in an application that demands especially high
quality and reliability or where its failure or malfunction may directly threaten human life or cause risk
of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation,
traffic, safety equipment or medical equipment for life support.
4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly
for maximum rating, operating supply voltage range, heat radiation characteristics, installation
conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used
beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable
failure rates or failure modes in semiconductor devices and employ systemic measures such as failsafes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other
consequential damage due to operation of the Hitachi product.
5. This product is not designed to be radiation resistant.
6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without
written approval from Hitachi.
7. Contact Hitachi’s sales office for any questions regarding this document or Hitachi semiconductor
products.
Hitachi, Ltd.
Semiconductor & Integrated Circuits.
Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan
Tel: Tokyo (03) 3270-2111 Fax: (03) 3270-5109
URLNorthAmerica : http:semiconductor.hitachi.com/
For further information write to:
Hitachi Semiconductor
(America) Inc.
179 East Tasman Drive,
San Jose,CA 95134
Tel: <1> (408) 433-1990
Fax: <1>(408) 433-0223
Europe: http://www.hitachi-eu.com/hel/ecg
Asia (Singapore): http://www.has.hitachi.com.sg/grp3/sicd/index.htm
Asia (Taiwan): http://www.hitachi.com.tw/E/Product/SICD_Frame.htm
Asia (HongKong): http://www.hitachi.com.hk/eng/bo/grp3/index.htm
Japan: http://www.hitachi.co.jp/Sicd/indx.htm
Hitachi Asia Ltd.
Taipei Branch Office
3F, Hung Kuo Building. No.167,
Tun-Hwa North Road, Taipei (105)
Tel: <886> (2) 2718-3666
Fax: <886> (2) 2718-8180
Copyright ' Hitachi, Ltd., 1998. All rights reserved. Printed in Japan.
Hitachi Asia (Hong Kong) Ltd.
Group III (Electronic Components)
7/F., North Tower, World Finance Centre,
Harbour City, Canton Road, Tsim Sha Tsui,
Kowloon, Hong Kong
Tel: <852> (2) 735 9218
Fax: <852> (2) 730 0281
Telex: 40815 HITEC HX
21
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