HIT 2SK3161-S Datasheet
2SK3161(L), 2SK3161(S)
Silicon N Channel MOS FET
High Speed Power Switching
ADE-208-734A (Z)
2nd. Edition
February 1999
Features
• Low on-resistance
RDS = 90 mΩ typ.
• High speed switching
• 4 V gate drive device can be driven from 5 V source
Outline
1. Gate
2. Drain
3. Source
4. Drain
1
2
3
4
1
2
3
4
LDPAK
G
D
S
2SK3161(L),2SK3161(S)
2
Absolute Maximum Ratings (Ta = 25°C)
Item Symbol Ratings Unit
Drain to source voltage V
DSS
200 V
Gate to source voltage V
GSS
±20 V
Drain current I
D
15 A
Drain peak current I
D(pulse)
Note1
60 A
Body-drain diode reverse drain current I
DR
15 A
Avalanche current I
AP
Note3
15 A
Avalanche energy E
AR
Note3
15 mJ
Channel dissipation Pch
Note2
75 W
Channel temperature Tch 150 °C
Storage temperature Tstg –55 to +150 °C
Note: 1. PW ≤ 10 µs, duty cycle ≤ 1%
2. Value at Tc = 25°C
3. Value at Tch = 25°C, Rg ≥ 50 Ω
Electrical Characteristics (Ta = 25°C)
Item Symbol Min Typ Max Unit Test Conditions
Drain to source breakdown voltage V
(BR)DSS
200 — — V ID = 10 mA, VGS = 0
Gate to source breakdown voltage V
(BR)GSS
±20——V I
G
= ±100 µA, VDS = 0
Gate to source leak current I
GSS
——±10 µAVGS = ±16 V, VDS = 0
Zero gate voltege drain current I
DSS
——10µAVDS = 200 V, VGS = 0
Gate to source cutoff voltage V
GS(off)
1.0 — 2.5 V ID = 1 mA, VDS = 10 V
Static drain to source on state R
DS(on)
— 90 115 mΩ ID = 8 A, VGS = 10 V
Note4
resistance R
DS(on)
— 95 125 mΩ ID = 8 A, VGS = 4 V
Note4
Forward transfer admittance |yfs|1620—S I
D
= 8 A, VDS = 10 V
Note4
Input capacitance Ciss — 1600 — pF VDS = 10 V
Output capacitance Coss — 510 — pF VGS = 0
Reverse transfer capacitance Crss — 250 — pF f = 1 MHz
Turn-on delay time t
d(on)
— 20 — ns ID = 8 A, VGS = 10 V
Rise time t
r
— 120 — ns RL = 3.75 Ω
Turn-off delay time t
d(off)
— 400 — ns
Fall time t
f
— 170 — ns
Body–drain diode forward voltage V
DF
— 0.85 — V IF = 15 A, VGS = 0
Body–drain diode reverse
recovery time
t
rr
— 100 — ns IF = 15 A, VGS = 0
diF/ dt = 50 A/ µs
Note: 4. Pulse test
2SK3161(L),2SK3161(S)
3
Main Characteristics
80
60
40
20
0
50 100 150 200
100
3
10
1
0.1
0.01
12
10
20 100
20
16
12
8
4
0
12345
0
246810
Ta = 25 °C
Tc = 75°C
25°C
–25°C
Channel Dissipation Pch (W)
Case Temperature Tc (°C)
Power vs. Temperature Derating
Drain to Source Voltage V (V)
DS
Drain Current I (A)
D
Maximum Safe Operation Area
Drain to Source Voltage V (V)
DS
Drain Current I (A)
D
Typical Output Characteristics
Gate to Source Voltage V (V)
GS
Drain Current I (A)
D
Typical Transfer Characteristics
Operation in
this area is
limited by R
DS(on)
V = 10 V
Pulse Test
DS
100 µs
1 ms
PW =10 ms (1shot)
DC Operation (Tc = 25°C)
10 µs
50
40
30
20
10
3.5 V
3 V
V =2.5 V
GS
10 V
Pulse Test
6 V
4 V
0.3
0.03
500
30
5
50
200
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