HIT 2SK3159 Datasheet
2SK3159
Silicon N Channel MOS FET
High Speed Power Switching
Features
• Low on-resistance
RDS = 23 mΩ typ.
• High speed switching
• 4 V gate drive device can be driven from 5 V source
Outline
ADE-208-774 (Z)
Target Specification
1st. Edition
February 1999
TO–3P
G
D
1. Gate
1
2
3
S
2. Drain
(Flange)
3. Source
2SK3159
Absolute Maximum Ratings (Ta = 25°C)
Item Symbol Ratings Unit
Drain to source voltage V
Gate to source voltage V
Drain current I
Drain peak current I
Body-drain diode reverse drain current I
Avalanche current I
Avalanche energy E
Channel dissipation Pch
DSS
GSS
D
D(pulse)
DR
Note3
AP
Note3
AR
Note1
Note2
Channel temperature Tch 150 °C
Storage temperature Tstg –55 to +150 °C
Note: 1. PW ≤ 10 µs, duty cycle ≤ 1%
2. Value at Tc = 25°C
3. Value at Tch = 25°C, Rg ≥ 50 Ω
Electrical Characteristics (Ta = 25°C)
150 V
±20 V
50 A
200 A
50 A
50 A
187 mJ
125 W
Item Symbol Min Typ Max Unit Test Conditions
Drain to source breakdown voltage V
Gate to source breakdown voltage V
Gate to source leak current I
Zero gate voltege drain current I
Gate to source cutoff voltage V
Static drain to source on state R
resistance R
(BR)DSS
(BR)GSS
GSS
DSS
GS(off)
DS(on)
DS(on)
150 — — V ID = 10 mA, VGS = 0
±20——V I
= ±100 µA, VDS = 0
G
——±10 µAVGS = ±16 V, VDS = 0
——10µAVDS = 150 V, VGS = 0
1.0 — 2.5 V ID = 1 mA, VDS = 10 V
—2330mΩ ID = 25 A, VGS = 10 V
—2848mΩ ID = 25 A, VGS = 4 V
Forward transfer admittance |yfs|2745—S ID = 25 A, VDS = 10 V
Input capacitance Ciss — 4000 — pF VDS = 10 V
Output capacitance Coss — 1650 — pF VGS = 0
Reverse transfer capacitance Crss — 590 — pF f = 1 MHz
Turn-on delay time t
Rise time t
Turn-off delay time t
Fall time t
Body–drain diode forward voltage V
Body–drain diode reverse
recovery time
t
d(on)
r
d(off)
f
DF
rr
— 30 — ns ID = 25 A, VGS = 10 V
— 280 — ns RL = 1.2 Ω
— 830 — ns
— 450 — ns
— 0.95 — V IF = 50 A, VGS = 0
— 200 — ns IF = 50 A, VGS = 0
diF/ dt = 50 A/ µs
Note: 4. Pulse test
Note4
Note4
Note4
2
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