HIT 2SK3154 Datasheet
2SK3154
Silicon N Channel MOS FET
High Speed Power Switching
Features
• Low on-resistance
RDS = 100 mΩ typ.
• High speed switching
• 4 V gate drive device can be driven from 5 V source
Outline
ADE-208-682A (Z)
2nd. Edition
February 1999
TO–220AB
G
D
3
1. Gate
2. Drain(Flange)
3. Source
1
2
S
2SK3154
Absolute Maximum Ratings (Ta = 25°C)
Item Symbol Ratings Unit
Drain to source voltage V
Gate to source voltage V
Drain current I
Drain peak current I
Body-drain diode reverse drain current I
Avalanche current I
Avalanche energy E
Channel dissipation Pch
DSS
GSS
D
D(pulse)
DR
Note3
AP
Note3
AR
Note1
Note2
Channel temperature Tch 150 °C
Storage temperature Tstg –55 to +150 °C
Note: 1. PW ≤ 10 µs, duty cycle ≤ 1%
2. Value at Tc = 25°C
3. Value at Tch = 25°C, Rg ≥ 50 Ω
Electrical Characteristics (Ta = 25°C)
150 V
±20 V
15 A
60 A
15 A
15 A
16 mJ
50 W
Item Symbol Min Typ Max Unit Test Conditions
Drain to source breakdown voltage V
Gate to source breakdown voltage V
Gate to source leak current I
Zero gate voltege drain current I
Gate to source cutoff voltage V
Static drain to source on state R
resistance R
(BR)DSS
(BR)GSS
GSS
DSS
GS(off)
DS(on)
DS(on)
150 — — V ID = 10 mA, VGS = 0
±20——V I
= ±100 µA, VDS = 0
G
——±10 µAVGS = ±16 V, VDS = 0
——10µAVDS = 150 V, VGS = 0
1.0 — 2.5 V ID = 1mA, VDS = 10 V
— 0.10 0.13 Ω ID = 8 A, VGS = 10 V
— 0.12 0.15 Ω ID = 8 A, VGS = 4 V
Forward transfer admittance |yfs| 8.5 14 — S ID = 8 A, VDS = 10 V
Input capacitance Ciss — 850 — pF VDS = 10 V
Output capacitance Coss — 300 — pF VGS = 0
Reverse transfer capacitance Crss — 160 — pF f = 1 MHz
Turn-on delay time t
Rise time t
Turn-off delay time t
Fall time t
Body–drain diode forward voltage V
Body–drain diode reverse
recovery time
t
d(on)
r
d(off)
f
DF
rr
— 13 — ns ID = 8 A, VGS = 10 V
— 100 — ns RL = 3.75 Ω
— 195 — ns
— 110 — ns
— 0.9 — V IF = 15 A, VGS = 0
— 140 — ns IF = 15 A, VGS = 0
diF/ dt = 50 A/ µs
Note: 4. Pulse test
Note4
Note4
Note4
2
Main Characteristics
2SK3154
Power vs. Temperature Derating
80
60
40
20
Channel Dissipation Pch (W)
0
50 100 150 200
Case Temperature Tc (°C)
Typical Output Characteristics
20
10 V
5 V
4 V
16
Pulse Test
3.5 V
500
200
100
50
D
20
10
5
2
1
0.5
0.2
0.1
0.05
0.1
Operation in
this area is
limited by R
Ta = 25°C
0.3
Drain Current I (A)
DC Operation
(Tc = 25°C)
DS(on)
1
3
Drain to Source Voltage V (V)
Typical Transfer Characteristics
20
Maximum Safe Operation Area
V = 10 V
DS
Pulse Test
16
10 µs
100 µs
PW = 10 ms(1shot)
1 ms
10
30
DS
1000
300100
D
12
8
Drain Current I (A)
4
0
246810
Drain to Source Voltage V (V)
3 V
V = 2.5 V
GS
DS
D
12
8
Drain Current I (A)
4
0
75°C
12345
Gate to Source Voltage V (V)
25°C
Tc = –25°C
GS
3
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