HIT 2SK3153 Datasheet
2SK3153
Silicon N Channel MOS FET
High Speed Power Switching
Features
• Low on-resistance
RDS = 65 mΩ typ.
• High speed switching
• 4 V gate drive device can be driven from 5 V source
Outline
ADE-208-733A (Z)
2nd. Edition
February 1999
TO–220FM
G
D
1. Gate
2. Drain
1
2
3
S
3. Source
2SK3153
Absolute Maximum Ratings (Ta = 25°C)
Item Symbol Ratings Unit
Drain to source voltage V
Gate to source voltage V
Drain current I
Drain peak current I
Body-drain diode reverse drain current I
Avalanche current I
Avalanche energy E
Channel dissipation Pch
DSS
GSS
D
D(pulse)
DR
Note3
AP
Note3
AR
Note1
Note2
Channel temperature Tch 150 °C
Storage temperature Tstg –55 to +150 °C
Note: 1. PW ≤ 10 µs, duty cycle ≤ 1%
2. Value at Tc = 25°C
3. Value at Tch = 25°C, Rg ≥ 50 Ω
Electrical Characteristics (Ta = 25°C)
120 V
±20 V
15 A
60 A
15 A
15 A
19 mJ
30 W
Item Symbol Min Typ Max Unit Test Conditions
Drain to source breakdown voltage V
Gate to source breakdown voltage V
Gate to source leak current I
Zero gate voltege drain current I
Gate to source cutoff voltage V
Static drain to source on state R
resistance R
(BR)DSS
(BR)GSS
GSS
DSS
GS(off)
DS(on)
DS(on)
120 — — V ID = 10 mA, VGS = 0
±20——V I
= ±100 µA, VDS = 0
G
——±10 µAVGS = ±16 V, VDS = 0
——10µAVDS = 120 V, VGS = 0
1.0 — 2.5 V ID = 1 mA, VDS = 10 V
—6585mΩ ID = 8 A, VGS = 10 V
— 80 110 mΩ ID = 8 A, VGS = 4 V
Forward transfer admittance |yfs| 8.5 14 — S ID = 8 A, VDS = 10 V
Input capacitance Ciss — 860 — pF VDS = 10 V
Output capacitance Coss — 360 — pF VGS = 0
Reverse transfer capacitance Crss — 195 — pF f = 1 MHz
Turn-on delay time t
Rise time t
Turn-off delay time t
Fall time t
Body–drain diode forward voltage V
Body–drain diode reverse
recovery time
t
d(on)
r
d(off)
f
DF
rr
— 15 — ns ID = 8 A, VGS = 10 V
— 95 — ns RL = 3.75 Ω
— 200 — ns
— 130 — ns
— 0.9 — V IF = 15 A, VGS = 0
— 100 — ns IF = 15 A, VGS = 0
diF/ dt = 50 A/ µs
Note: 4. Pulse test
Note4
Note4
Note4
2
Main Characteristics
2SK3153
Power vs. Temperature Derating
40
30
20
10
Channel Dissipation Pch (W)
0
50 100 150 200
Case Temperature Tc (°C)
Typical Output Characteristics
50
Pulse Test
V = 10 V
GS
40
6 V
4.5 V
5 V
1000
Maximum Safe Operation Area
300
100
D
30
10
DC Operation
(Tc = 25°C)
3
Drain Current I (A)
1
0.3
0.1
0.1
Operation in
this area is
limited by R
Ta = 25°C
0.3
1
DS(on)
3
Drain to Source Voltage V (V)
Typical Transfer Characteristics
20
V = 10 V
DS
Pulse Test
16
100 µs
PW = 10 ms
(1 shot)
1 ms
30 100
10
10 µs
300 1000
DS
D
30
20
Drain Current I (A)
10
0
246810
Drain to Source Voltage V (V)
4 V
3.5 V
3 V
2.5 V
DS
D
12
8
Drain Current I (A)
4
75°C
0
12345
Gate to Source Voltage V (V)
25°C
Tc = –25°C
GS
3
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