FUJITSU MB88152A, MB88152A-100, MB88152A-101, MB88152A-102, MB88152A-110 DATA SHEET

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FUJITSU MICROELECTRONICS

 

DS04-29125-2Ea

 

 

DATA SHEET

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Spread Spectrum Clock Generator

MB88152A

MB88152A-100/101/102/110/111/112

DESCRIPTION

MB88152A is a clock generator for EMI (Electro Magnetic Interference) reduction. The peak of unnecessary radiation noise (EMI) can be attenuated by making the oscillation frequency slightly modulate periodically with the internal modulator. It corresponds to both of the center spread which modulates input frequency as Middle Centered and down spread which modulates so as not to exceed input frequency.

FEATURES

Input frequency : 16.6 MHz to 134 MHz

Output frequency : 16.6 MHz to 134 MHz

Modulation rate : ± 0.5%, ± 1.5% (Center spread), − 1.0%, − 3.0% (Down spread)

Equipped with oscillation circuit: Range of oscillation 16.6 MHz to 48 MHz

Modulation clock output Duty : 40% to 60%

Modulation clock Cycle-Cycle Jitter : Less than 100 ps

Low current consumption by CMOS process : 5.0 mA (24 MHz : Typ-sample, no load)

Power supply voltage : 3.3 V ± 0.3 V

Operating temperature : − 40 °C to +85 °C

Package : SOP 8-pin

Copyright©2007-2008 FUJITSU MICROELECTRONICS LIMITED All rights reserved 2007.6

MB88152A

PRODUCT LINE-UP

MB88152A has three kinds of input frequency, and two kinds of modulation type (center/down spread), total six lineups.

Product

Input/Output Frequency

Modulation type

Modulation enable pin

 

 

 

 

MB88152A-100

16.6 MHz to 134 MHz

 

No

 

 

 

 

MB88152A-101

16.6 MHz to 67 MHz

Down spread

Yes

 

 

 

MB88152A-102

40 MHz to 134 MHz

 

 

 

 

 

 

 

MB88152A-110

16.6 MHz to 134 MHz

 

No

 

 

 

 

MB88152A-111

16.6 MHz to 67 MHz

Center spread

Yes

 

 

 

MB88152A-112

40 MHz to 134 MHz

 

 

 

 

 

 

 

PIN ASSIGNMENT

TOP VIEW

XIN

1

 

8

XENS

XIN

1

 

8

FREQ1

XOUT 2

MB88152A-101

7

FREQ

XOUT 2

 

7

FREQ0

MB88152A-102

MB88152A-100

VSS

3

MB88152A-111

6

VDD

VSS

3

MB88152A-110

6

VDD

 

 

MB88152A-112

 

 

 

 

 

 

 

SEL

4

 

5

CKOUT

SEL

4

 

5

CKOUT

 

 

 

 

 

 

 

 

 

 

FPT-8P-M02 FPT-8P-M02

PIN DESCRIPTION

Pin name

I/O

Pin no.

Description

 

 

 

 

XIN

I

1

Crystal resonator connection pin/clock input pin

 

 

 

 

XOUT

O

2

Crystal resonator connection pin

 

 

 

 

VSS

 

3

GND pin

 

 

 

 

SEL

I

4

Modulation rate setting pin

 

 

 

 

CKOUT

O

5

Modulated clock output pin

 

 

 

 

VDD

 

6

Power supply voltage pin

 

 

 

 

FREQ/FREQ0

I

7

Frequency setting pin

 

 

 

 

XENS/FREQ1

I

8

Modulation enable setting pin/frequency setting pin

 

 

 

 

2

MB88152A

I/O CIRCUIT TYPE

Pin

Circuit type

Remarks

CMOS hysteresis input

SEL

FREQ

FREQ0

FREQ1

XENS

• CMOS output

• IOL = 4 mA

CKOUT

Note : For XIN and XOUT pins, refer to “■OSCILLATION CIRCUIT”.

3

MB88152A

HANDLING DEVICES

Preventing Latch-up

A latch-up can occur if, on this device, (a) a voltage higher than VDD or a voltage lower than VSS is applied to an input or output pin or (b) a voltage higher than the rating is applied between VDD and VSS pins. The latch-up, if it occurs, significantly increases the power supply current and may cause thermal destruction of an element. When you use this device, be very careful not to exceed the maximum rating.

Handling unused pins

Do not leave an unused input pin open, since it may cause a malfunction. Handle by, using a pull-up or pull-down resistor.

Unused output pin should be opened.

The attention when the external clock is used

Input the clock to XIN pin, and XOUT pin should be opened when you use the external clock.

Please pay attention so that an overshoot and an undershoot do not occur to an input clock of XIN pin.

Power supply pins

Please design connecting the power supply pin of this device by as low impedance as possible from the current supply source.

We recommend connecting electrolytic capacitor (about 10 µF) and the ceramic capacitor (about 0.01 µF) in parallel between VSS and VDD pins near the device, as a bypass capacitor.

Oscillation Circuit

Noise near the XIN and XOUT pins may cause the device to malfunction. Design printed circuit boards so that electric wiring of XIN or XOUT pin and resonator (or ceramic oscillator) do not intersect other wiring.

Design the printed circuit board that surrounds the XIN and XOUT pins with ground.

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FUJITSU MB88152A, MB88152A-100, MB88152A-101, MB88152A-102, MB88152A-110 DATA SHEET

MB88152A

BLOCK DIAGRAM

VDD

SEL

Modulation rate setting

 

 

 

 

 

 

Frequency setting

 

 

FREQ/FREQ0

 

 

 

 

Modulation enable /

PLL block

CKOUT

 

Frequency setting

XENS/FREQ1

 

Clock output

 

 

 

XOUT

Reference clock

 

 

XIN

Rf = 1 MΩ

 

 

VSS

 

1

 

 

 

 

 

 

 

 

 

 

M

 

 

 

 

 

Phase

Charge

V/I

IDAC

ICO

 

compare

pump

conversion

 

 

Modulation

Reference

 

 

 

 

1

 

Loop filter

 

clock

clock

 

 

output

 

 

 

 

N

 

 

 

 

 

 

 

 

 

 

Modulation

 

 

 

 

 

 

 

1

 

 

 

 

 

 

 

Modulation logic

rate setting/

 

 

 

L

 

 

 

 

 

MB88152A PLL block

 

 

Modulation

 

 

 

 

 

 

 

 

 

 

enable setting

A glitchless IDAC (current output D/A converter) provides precise modulation, thereby dramatically reducing EMI.

5

MB88152A

PIN SETTING

When changing the pin setting, the stabilization wait time for the modulation clock is required. The stabilization wait time for the modulation clock takes the maximum value of Lock-Up time in “■ ELECTRICAL CHARACTERISTICS • AC characteristics Lock-Up time”.

Modulation enable setting

XENS

 

Modulation

 

 

 

 

L

Modulation

 

MB88152A-101, MB88152A-102,

H

No modulation

 

MB88152A-111, MB88152A-112

 

 

 

 

Note : MB88152A-100 and MB88152A-110 do not have XENS pin.

SEL modulation rate setting

SEL

 

Modulation rate

Remarks

 

 

 

 

 

 

 

 

± 0.5%

 

MB88152A-110,

 

 

 

 

MB88152A-111,

Center spread

L

 

 

 

MB88152A-112

 

 

 

 

 

 

 

− 1.0%

 

MB88152A-100,

 

 

 

 

 

 

 

 

MB88152A-101,

Down spread

 

 

 

 

MB88152A-102

 

 

 

 

 

 

 

 

 

± 1.5%

 

MB88152A-110,

 

 

 

 

MB88152A-111,

Center spread

H

 

 

 

MB88152A-112

 

 

 

 

 

 

 

− 3.0%

 

MB88152A-100,

 

 

 

 

 

 

 

 

MB88152A-101,

Down spread

 

 

 

 

MB88152A-102

 

 

 

 

 

 

 

Note : The modulation rate can be changed at the level of the terminal.

Frequency setting

FREQ

 

 

 

Frequency

 

 

 

 

 

 

 

L

 

 

16.6 MHz to 40 MHz

 

MB88152A-101, MB88152A-111

 

 

 

 

 

 

 

40 MHz to 80 MHz

 

MB88152A-102, MB88152A-112

 

 

 

 

 

 

 

 

 

 

 

 

H

 

 

33 MHz to 67 MHz

 

MB88152A-101, MB88152A-111

 

 

 

 

 

 

 

66 MHz to 134 MHz

 

MB88152A-102, MB88152A-112

 

 

 

 

 

 

 

 

 

 

Note : MB88152A-100 and MB88152A-110 do not have FREQ pin.

Frequency setting

 

 

 

 

 

FREQ1

 

FREQ0

 

Frequency

 

 

 

 

 

 

L

 

L

16.6 MHz to 40 MHz

 

 

 

 

 

 

 

 

L

 

H

33 MHz to 67 MHz

 

MB88152A-100, MB88152A-110

 

 

 

 

 

 

H

 

L

40 MHz to 80 MHz

 

 

 

 

 

 

 

 

 

 

H

 

H

66 MHz to 134 MHz

 

 

 

 

 

 

 

 

 

Note : MB88152A-101, MB88152A-111, MB88152A-102 and MB88152A-112 have neither FREQ0 pin nor FREQ1 pin.

6

MB88152A

• Center spread

Spectrum is spread (modulated) by centering on the input frequency.

3.0% modulation width

Radiation level

 

−1.5%

+1.5%

 

Frequency

Input frequency

Center spread example of

± 1.5% Modulation rate

• Down spread

Spectrum is spread (modulated) below the input frequency.

3.0% modulation width

 

Radiation level

 

−3.0%

 

 

Frequency

Input frequency

Down spread example of

− 3.0% Modulation rate

7

MB88152A

ABSOLUTE MAXIMUM RATINGS

Parameter

Symbol

Rating

Unit

 

 

Min

Max

 

 

 

 

 

 

 

 

Power supply voltage*

VDD

− 0.5

+ 4.0

V

 

 

 

 

 

Input voltage*

VI

VSS − 0.5

VDD + 0.5

V

 

 

 

 

 

Output voltage*

VO

VSS − 0.5

VDD + 0.5

V

 

 

 

 

 

Storage temperature

TST

− 55

+ 125

°C

 

 

 

 

 

Operation junction temperature

TJ

− 40

+ 125

°C

 

 

 

 

 

Output current

IO

− 14

+ 14

mA

 

 

 

 

 

Overshoot

VIOVER

 

VDD + 1.0 (tOVER ≤ 50 ns)

V

 

 

 

 

 

Undershoot

VIUNDER

VSS − 1.0 (tUNDER ≤ 50 ns)

 

V

 

 

 

 

 

* : The parameter is based on VSS = 0.0 V.

WARNING: Semiconductor devices can be permanently damaged by application of stress (voltage, current, temperature, etc.) in excess of absolute maximum ratings. Do not exceed these ratings.

Overshoot/Undershoot

 

 

 

 

 

tUNDER ≤ 50 ns

 

 

 

 

 

VIOVER ≤ VDD + 1.0 V

 

 

 

 

 

VDD

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Input pin

 

 

 

 

 

VSS

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

tOVER ≤ 50 ns

VIUNDER ≤ VSS − 1.0 V

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