DYNEX DSF11060SG60, DSF11060SG58, DSF11060SG56, DSF11060SG55 Datasheet

DSF11060SG

DSF11060SG

Fast Recovery Diode

Replaces March 1998 version, DS4217-2.4

DS4548 - 3.2 January 2000

APPLICATIONS

■ Snubber Diode For GTO Circuits

FEATURES

■Double Side Cooling

■High Surge Capability

■Low Recovery Charge

VOLTAGE RATINGS

Type Number	Repetitive Peak	Conditions
	Reverse Voltage
	VRRM
	V
DSF11060SG60	6000	VRSM = VRRM + 100V
DSF11060SG58	5800
DSF11060SG56	5600
DSF11060SG55	5500

Lower voltage grades available.

KEY PARAMETERS

VRRM

6000V

IF(AV)

400A

IFSM

4200A

Qr

700μC

trr

6.0μs

Outline type code: M779b.

See Package Details for further information.

CURRENT RATINGS

Symbol	Parameter			Conditions			Max.	Units
Double Side Cooled
I	Mean forward current	Half wave resistive load, T			case	= 65oC	400	A
F(AV)
I	RMS value	T	case	= 65oC			631	A
F(RMS)
I	Continuous (direct) forward current	T	case	= 65oC			585	A
F
Single Side Cooled (Anode side)
IF(AV)	Mean forward current	Half wave resistive load, Tcase = 65oC					265	A
I	RMS value	T	case	= 65oC			420	A
F(RMS)
I	Continuous (direct) forward current	T	case	= 65oC			365	A
F

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DSF11060SG

SURGE RATINGS

	Symbol	Parameter	Conditions	Max.	Units
	IFSM	Surge (non-repetitive) forward current	10ms half sine; with 0% VRRM, Tj = 150oC	4.2	kA
	I2t	I2t for fusing		88 x 103	A2s
	IFSM	Surge (non-repetitive) forward current	10ms half sine; with 50% VRRM, Tj = 150oC	3.4	kA
	I2t	I2t for fusing		57.8 x 103	A2s

THERMAL AND MECHANICAL DATA

	Symbol	Parameter	Conditions		Min.	Max.	Units
			Double side cooled	dc	-	0.032	oC/W
	R	Thermal resistance - junction to case		Anode dc	-	0.064	oC/W
	th(j-c)		Single side cooled
				Cathode dc	-	0.064	oC/W
			Clamping force 12kN	Double side	-	0.008	oC/W
	Rth(c-h)	Thermal resistance - case to heatsink
			with mounting compound	Single side	-	0.016	oC/W
	Tvj	Virtual junction temperature	Forward (conducting)		-	135	oC
	Tstg	Storage temperature range			-55	125	oC
	-	Clamping force			10.8	13.2	kN

CHARACTERISTICS

Symbol		Parameter				Conditions		Typ.	Max.	Units
V		Forward voltage	At 600A peak, T			case	= 25oC	-	3.8	V
	FM
I	RRM	Peak reverse current	At V	RRM	, T = 125oC			-	70	mA
					case
	trr	Reverse recovery time						6.0	-	μs
QRA1		Recovered charge (50% chord)	IF = 1000A, diRR/dt = 100A/μs					-	1000	μC
IRM		Reverse recovery current	Tcase = 125oC, VR = 100V					350	-	A
	K	Soft factor						1.7	-	-
VTO		Threshold voltage	At Tvj = 125oC					-	1.5	V
	rT	Slope resistance	At Tvj = 125oC					-	2.9	mΩ
V		Forward recovery voltage	di/dt = 1000A/μs, T = 100oC					-	400	V
	FRM						j

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