DYNEX DNB6125, DNB6124, DNB6122, DNB6120, DNB6118 Datasheet

1/7

www.dynexsemi.com

DNB61

FEATURES

■ Double Side Cooling

■ High Surge Capability

APPLICATIONS

■ Rectification

■ Freewheel Diode

■ DC Motor Control

■ Power Supplies

■ Welding

■ Battery Chargers

VOLTAGE RATINGS

ORDERING INFORMATION

When ordering, select the required part number shown in the

Voltage Ratings selection table, e.g.:

DNB61 24

Note: Please use the complete part number when ordering

and quote this number in any future correspondance relating

to your order.

KEY PARAMETERS

V

RRM

2500V

I

F(AV)

3438A

I

FSM

32000A

DNB61

Rectifier Diode

Replaces January 2000 version, DS4178-4.0 DS4178-5.0 July 2001

2500

2400

2200

2000

1800

1600

DNB61 25

DNB61 24

DNB61 22

DNB61 20

DNB61 18

DNB61 16

Conditions

V

RSM

= V

RRM

+ 100V

Lower voltage grades available.

Type Number Repetitive Peak

Reverse Voltage

V

RRM

V

Outline type code: DO200AD

See Package Details for further information.

Fig. 1 Package outline

2/7

www.dynexsemi.com

DNB61

CURRENT RATINGS

T

case

= 75

o

C unless otherwise stated

Symbol Parameter Conditions

Double Side Cooled

I

F(AV)

Mean forward current

I

F(RMS)

RMS value

I

F

Continuous (direct) forward current

Single Side Cooled (Anode side)

I

F(AV)

Mean forward current

I

F(RMS)

RMS value

I

F

Continuous (direct) forward current

UnitsMax.

Half wave resistive load 3438 A

- 5401 A

- 4997 A

Half wave resistive load 2589 A

- 4066 A

- 3586 A

T

case

= 100

o

C unless otherwise stated

Symbol Parameter Conditions

Double Side Cooled

I

F(AV)

Mean forward current

I

F(RMS)

RMS value

I

F

Continuous (direct) forward current

Single Side Cooled (Anode side)

I

F(AV)

Mean forward current

I

F(RMS)

RMS value

I

F

Continuous (direct) forward current

UnitsMax.

Half wave resistive load 2880 A

- 4520 A

- 4100 A

Half wave resistive load 1870 A

- 2940 A

- 2550 A

3/7

www.dynexsemi.com

DNB61

SURGE RATINGS

Conditions

10ms half sine; T

case

= 175

o

C

V

R

= 50% V

RRM

- 1/4 sine

10ms half sine; T

case

= 175

o

C

V

R

= 0

Max. Units

Symbol

Parameter

I

FSM

Surge (non-repetitive) forward current

I

2

tI

2

t for fusing

I

FSM

Surge (non-repetitive) forward current

I

2

t

I

2

t for fusing 5.12 x 10

6

A

2

s

32.0 kA

3.25 x 10

6

A

2

s

25.5 kA

THERMAL AND MECHANICAL DATA

dc

Conditions Min. Max. Units

o

C/W- 0.025Anode dc

Clamping force 45.0kN

with mounting compound

Thermal resistance - case to heatsink

R

th(c-h)

0.003

Double side

-

T

vj

Virtual junction temperature

T

stg

Storage temperature range

Single side

-

Thermal resistance - junction to case

R

th(j-c)

Single side cooled

Symbol

Parameter

–55 200

o

C

Forward (conducting) -

o

C

- 0.006

o

C/W

o

C/W

Cathode dc

- 0.027

o

C/W

Double side cooled

- 0.013

o

C/W

Clamping force

40.0 48.0 kN

175

Reverse (blocking) -

o

C

185