DYNEX DK2414FCM, DK2414FCK, DK2420FCM, DK2420FCK, DK2418FCM Datasheet

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DK24..FC

DK24..FC

Fast Switching Thyristor

Replaces January 2000 version, DS4268-3.0

DS4268-4.0 July 2001

FEATURES

Low Switching Losses At High Frequency

Fully Characterised For Operation Up To 20kHz

APPLICATIONS

High Power Inverters And Choppers

UPS

AC Motor Drives

Induction Heating

Cycloconverters

VOLTAGE RATINGS

Type Number

Repetitive Peak

Conditions

 

Voltages

 

 

VDRM VRRM

 

 

V

 

 

 

 

DK24 20FC K or M

2000

VRSM = VRRM + 100V

DK24 18FC K or M

1800

 

DK24 16FC K or M

1600

IDRM = IRRM = 25mA

DK24 14FC K or M

1400

 

 

 

at VRRM or VDRM & Tvj

ORDERING INFORMATION

When ordering, select the required part number shown in the Voltage Ratings selection table, then:-

Add K to type number for 3/4" 16 UNF thread, e.g. DK24 16FCK

or

Add M to type number for M16 thread, e.g. DK24 14FCM.

Note: Please use the complete part number when ordering and quote this number in any future correspondance relating to your order.

KEY PARAMETERS

VDRM

2000V

 

IT(RMS)

260A

 

ITSM

4000A

 

dVdt

200V/

s

dI/dt

500A/

s

tq

50 s

 

Outline type code: TO93

See Package Details for further information.

Fig. 1 Package outline

1/13

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DK24..FC

CURRENT RATINGS

Symbol

Parameter

 

 

Conditions

Max.

Units

 

 

 

 

 

 

I

T(AV)

Mean on-state current

Half wave resistive load, T = 80oC

165

A

 

 

 

 

case

 

 

 

 

 

 

 

 

 

 

I

 

RMS value

T

case

= 80oC

260

A

T(RMS)

 

 

 

 

 

SURGE RATINGS

Symbol

Parameter

 

 

 

Conditions

Max.

Units

 

 

 

 

 

 

 

 

 

I

TSM

Surge (non-repetitive) on-state current

t

p

10ms half sine; T = 125oC

4.0

kA

 

 

 

 

case

 

 

 

 

 

 

 

 

VR = 0% VRRM - 1/4 sine

 

 

 

I2t

I2t for fusing

 

 

 

80.0 x 103

A2s

 

 

 

 

 

 

 

 

 

THERMAL AND MECHANICAL DATA

Symbol

Parameter

Conditions

Min.

Max.

Units

 

 

 

 

 

 

R

Thermal resistance - junction to case

dc

-

0.13

oC/W

th(j-c)

 

 

 

 

 

 

 

 

 

 

 

Rth(c-h)

Thermal resistance - case to heatsink

Mounting torque 35.0Nm

-

0.06

oC/W

 

 

with mounting compound

 

 

 

 

 

 

 

 

 

 

 

On-state (conducting)

-

125

oC

Tvj

Virtual junction temperature

 

 

 

 

Reverse (blocking)

-

125

oC

 

 

 

 

 

 

 

 

Tstg

Storage temperature range

 

-40

150

oC

-

Mounting torque

 

30.0

35.0

Nm

 

 

 

 

 

 

MEASUREMENT OF RECOVERED CHARGE - QRA1

Measurement of QRA1 : QRA1 = IRR x tRR

2

ITM

 

 

 

 

QRA1

 

 

 

 

 

 

 

 

 

 

 

 

 

tp

= 1ms

 

 

0.5x IRR

 

 

dIR/dt

 

 

 

IRR

 

 

 

 

 

2/13

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DK24..FC

DYNAMIC CHARACTERISTICS

Symbol

Parameter

 

 

 

Conditions

 

 

 

Min.

Max.

Units

 

 

 

 

 

 

 

 

 

 

VTM

Maximum on-state voltage

At 450A peak, Tcase = 25oC

 

 

 

-

2.0

V

 

I

 

/I

Peak reverse and off-state current

At V

 

/V

, T

= 125oC

 

 

 

-

25

mA

RRM

 

DRM

 

 

RRM DRM

case

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

dV/dt

Maximum linear rate of rise of off-state voltage

Linear to 60% V T = 125oC, Gate open circuit

-

200

V/µ

s

 

 

 

 

 

 

 

 

DRM

j

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

dI/dt

Rate of rise of on-state current

Gate source 20V, 20Ω

Repetitive 50Hz

-

500

A/µ

s

 

 

 

 

 

 

 

 

 

 

 

 

tr < 0.5µ s, Tj

= 125˚C

Non-repetitive

-

800

A/µ

s

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

V

T(TO)

Threshold voltage

At T

 

= 125oC

 

 

 

 

-

1.25

V

 

 

 

vj

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

r

T

On-state slope resistance

At T

 

= 125oC

 

 

 

 

-

1.66

mΩ

 

 

 

 

 

vj

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

tgd

Delay time

Tj = 25˚C, IT = 50A,

 

 

 

1.5*

-

µ s

 

 

 

 

 

VD = 300V, IG = 1A,

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

t(ON)TOT

Total turn-on time

dI/dt = 30A/µ

s, dIG/dt = 1A/µ s

 

 

3*

-

µ s

 

IH

Holding current

Tj = 25oC, ITM = 1A, VD = 12V

 

 

 

-

70

mA

 

 

 

 

 

 

 

 

 

 

tq

Turn-off time

Tj = 125˚C, IT = 200A, VR = 50V,

 

t code: C

-

50

µ s

 

 

 

 

 

dV/dt = 200V/µ s (Linear to 60% V

),

q

 

 

 

 

 

 

 

 

 

dIR/dt = 30A/µ

 

 

DRM

 

 

 

 

 

 

 

 

 

 

s, Gate open circuit

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

*Typical value.

 

 

 

 

 

 

 

 

 

 

 

 

GATE TRIGGER CHARACTERISTICS AND RATINGS

 

 

 

 

 

 

 

 

 

Symbol

Parameter

 

 

 

 

 

 

Conditions

Typ.

Max.

Units

 

 

 

 

 

 

 

 

 

 

 

 

 

V

GT

Gate trigger voltage

V

 

= 12V, T

= 25oC, R

L

= 6Ω

-

3.0

V

 

 

 

 

DRM

 

 

 

case

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

I

GT

Gate trigger current

V

DRM

= 12V, T

= 25oC, R

L

= 6Ω

-

200

mA

 

 

 

 

 

 

case

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

V

GD

Gate non-trigger voltage

At V

DRM

T

case

= 125oC, R

L

= 1kΩ

-

0.2

V

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

VRGM

Peak reverse gate voltage

 

 

 

 

 

 

 

 

 

 

 

 

 

-

5.0

V

IFGM

Peak forward gate current

Anode positive with respect to cathode

-

4

A

PGM

Peak gate power

 

 

 

 

 

 

 

 

 

 

 

 

 

-

16

W

PG(AV)

Mean gate power

 

 

 

 

 

 

 

 

 

 

 

 

 

-

3.0

W

3/13

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DYNEX DK2414FCM, DK2414FCK, DK2420FCM, DK2420FCK, DK2418FCM Datasheet

DK24..FC

CURVES

Fig.2 Maximum (limit) on-state characteristics

Fig.3 Gate characteristics

Fig.4 Typical recovered charge (for a device rated VDRM = 1000V, tq = 50 s)

4/13

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