DCR5980Z
DCR5980Z
Phase Control Thyristor
Target Information
DS5482-1.1 February 2002
FEATURES |
KEY PARAMETERS |
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■ Double Side Cooling |
VDRM |
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1800V |
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■ High Surge Capability |
IT(AV) |
(max) |
5985A |
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ITSM |
(max) |
98000A |
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■ Low Inductance Internal Construction |
dV/dt |
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1000V/ s |
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dI/dt |
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250A/ s |
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APPLICATIONS
■High Power Converters
■DC Motor Control
■High Voltage Power Supplies
VOLTAGE RATINGS |
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Part and Ordering |
Repetitive Peak |
Conditions |
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Number |
Voltages |
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VDRM and VDRM |
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V |
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DCR5980Z18 |
1800 |
Tvj = 0˚ to 125˚C, |
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DCR5980Z16 |
1600 |
IDRM = IRRM = 500mA, |
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DCR5980Z14 |
1400 |
VDRM, VRRM tp = 10ms, |
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Outline type code: Z |
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DCR5980Z12 |
1200 |
VDSM & VRSM = |
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VDRM & VRRM + 100V |
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(See Package Details for further information) |
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respectively |
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Lower voltage grades available. |
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Fig. 1 Package outline |
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ORDERING INFORMATION
When ordering, select the required part number shown in the
Voltage Ratings selection table.
For example:
DCR5980Z14
Note: Please use the complete part number when ordering and quote this number in any future correspondance relating to your order.
1/9
www.dynexsemi.com
DCR5980Z
CURRENT RATINGS
Tcase = 60˚C unless stated otherwise.
Symbol |
Parameter |
Test Conditions |
Max. |
Units |
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Double Side Cooled |
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IT(AV) |
Mean on-state current |
Half wave resistive load |
5985 |
A |
IT(RMS) |
RMS value |
- |
9400 |
A |
IT |
Continuous (direct) on-state current |
- |
8400 |
A |
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Single Side Cooled |
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IT(AV) |
Mean on-state current |
Half wave resistive load |
3820 |
A |
IT(RMS) |
RMS value |
- |
6000 |
A |
IT |
Continuous (direct) on-state current |
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4920 |
A |
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Tcase = 80˚C unless stated otherwise. |
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Symbol |
Parameter |
Test Conditions |
Max. |
Units |
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Double Side Cooled |
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IT(AV) |
Mean on-state current |
Half wave resistive load |
4650 |
A |
IT(RMS) |
RMS value |
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7300 |
A |
IT |
Continuous (direct) on-state current |
- |
6360 |
A |
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Single Side Cooled |
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IT(AV) |
Mean on-state current |
Half wave resistive load |
2910 |
A |
IT(RMS) |
RMS value |
- |
4570 |
A |
IT |
Continuous (direct) on-state current |
- |
3630 |
A |
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2/9
www.dynexsemi.com
DCR5980Z
SURGE RATINGS
Symbol |
Parameter |
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Test Conditions |
Max. |
Units |
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ITSM |
Surge (non-repetitive) on-state current |
10ms half sine, Tcase = 125˚C |
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78.0 |
kA |
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I2t |
I2t for fusing |
V |
R |
= 50% V - 1/4 sine |
30.4 x 106 |
A2s |
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RRM |
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ITSM |
Surge (non-repetitive) on-state current |
10ms half sine, Tcase = 125˚C |
98.0 |
kA |
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I2t |
I2t for fusing |
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VR = 0 |
48 x 106 |
A2s |
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DYNAMIC CHARACTERISTICS
Symbol |
Parameter |
Test Conditions |
Min. |
Max. |
Units |
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IRRM/IRRM |
Peak reverse and off-state current |
At VRRM/VDRM, Tcase = 125˚C |
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500 |
mA |
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dV/dt |
Max. linear rate of rise of off-state voltage |
To 67% VDRM, Tj = 125˚C |
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1000 |
V/µ |
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dI/dt |
Rate of rise of on-state current |
From 67% VDRM to 1100A |
Repetitive 50Hz |
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250 |
A/µ |
s |
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Gate source 1A, |
Non-repetitive |
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500 |
A/µ |
s |
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tr = 0.5µ s, Tj = 125˚C |
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VT(TO) |
Threshold voltage |
At Tvj = 125˚C |
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0.77 |
V |
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rT |
On-state slope resistance |
At Tvj = 125˚C |
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0.05 |
mΩ |
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tgd |
Delay time |
VD = 67% VDRM, gate source 20V, 10Ω |
1.0 |
1.5 |
µ s |
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tr = 0.5µ s, Tj = 25˚C |
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IL |
Latching current |
Tj = 25˚C, VD = 5V |
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150 |
750 |
mA |
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IH |
Holding current |
Tj = 25˚C, VG–K = ∞ |
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40 |
200 |
mA |
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3/9
www.dynexsemi.com
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