DYNEX DK1308FWM, DK1308FWK, DK1308FMM, DK1308FMK, DK1306FWM Datasheet
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DK13..FW
DK13..FW
Fast Switching Thyristor
Replaces January 2000 version, DS4267-3.0 |
DS4267-4.0 July 2001 |
FEATURES
■Low Switching Losses At High Frequency.
■Fully Characterised For Operation Up To 20kHz.
APPLICATIONS
■High Power Inverters And Choppers.
■UPS.
■AC Motor Drives.
■Induction Heating.
■Cycloconverters.
VOLTAGE RATINGS
Type Number |
Repetitive Peak |
Conditions |
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Voltages |
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VDRM VRRM |
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V |
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DK13 08FW K or M |
800 |
VRSM = VRRM + 100V |
DK13 06FW K or M |
600 |
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IDRM = IRRM = 15mA |
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at VRRM or VDRM & Tvj |
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ORDERING INFORMATION
When ordering, select the required part number shown in the Voltage Ratings selection table, then:-
Add K to type number for 1/2" 20 UNF thread, e.g. DK13 06FWK
or
Add M to type number for M12 thread, e.g. DK13 06FM.
Note: Please use the complete part number when ordering and quote this number in any future correspondance relating to your order.
KEY PARAMETERS
VDRM |
800V |
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IT(RMS) |
110A |
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ITSM |
1200A |
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dVdt |
200V/ |
s |
dI/dt |
200A/ |
s |
tq |
10 s |
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Outline type code: TO94
See Package Details for further information.
Fig. 1 Package outline
1/13
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DK13..FW
CURRENT RATINGS
Symbol |
Parameter |
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Conditions |
Max. |
Units |
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I |
T(AV) |
Mean on-state current |
Half wave resistive load, T = 80oC |
70 |
A |
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case |
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I |
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RMS value |
T |
case |
= 80oC |
110 |
A |
T(RMS) |
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SURGE RATINGS
Symbol |
Parameter |
Conditions |
Max. |
Units |
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ITSM |
Surge (non-repetitive) on-state current |
tp = 10ms half sine; Tcase = 125oC |
1.2 |
kA |
I2t |
I2t for fusing |
VR = 0% VRRM - 1/4 sine |
7.2 x 103 |
A2s |
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THERMAL AND MECHANICAL DATA
Symbol |
Parameter |
Conditions |
Min. |
Max. |
Units |
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R |
Thermal resistance - junction to case |
dc |
- |
0.24 |
oC/W |
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th(j-c) |
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Rth(c-h) |
Thermal resistance - case to heatsink |
Mounting torque 15.0Nm |
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0.08 |
oC/W |
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with mounting compound |
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On-state (conducting) |
- |
125 |
oC |
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Tvj |
Virtual junction temperature |
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Reverse (blocking) |
- |
125 |
oC |
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Tstg |
Storage temperature range |
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-40 |
150 |
oC |
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Mounting torque |
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12.0 |
15.0 |
Nm |
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MEASUREMENT OF RECOVERED CHARGE - QRA1
Measurement of QRA1 : QRA1 = IRR x tRR
2
ITM
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QRA1 |
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tp |
= 1ms |
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0.5x IRR |
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dIR/dt |
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IRR |
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DK13..FW
DYNAMIC CHARACTERISTICS
Symbol |
Parameter |
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Conditions |
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Min. |
Max. |
Units |
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VTM |
Maximum on-state voltage |
At 300A peak, Tcase = 25oC |
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- |
2.35 |
V |
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I |
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/I |
Peak reverse and off-state current |
At V |
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/V |
, T |
= 125oC |
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- |
15 |
mA |
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RRM |
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DRM |
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RRM DRM |
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case |
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dV/dt |
Maximum linear rate of rise of off-state voltage |
Linear to 60% V T = 125oC, Gate open circuit |
- |
200 |
V/µ |
s |
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DRM |
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dI/dt |
Rate of rise of on-state current |
Gate source 20V, 20Ω |
Repetitive 50Hz |
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500 |
A/µ |
s |
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tr < 0.5µ s, Tj |
= 125˚C |
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Non-repetitive |
- |
800 |
A/µ |
s |
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V |
T(TO) |
Threshold voltage |
At T |
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= 125oC |
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- |
1.65 |
V |
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vj |
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r |
T |
On-state slope resistance |
At T |
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= 125oC |
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3.5 |
mΩ |
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vj |
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tgd |
Delay time |
Tj = 25˚C, IT = 50A, |
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3 |
µ s |
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VD = 300V, IG = 1A, |
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t(ON)TOT |
Total turn-on time |
dI/dt =50A/µ |
s, dIG/dt = 1A/µ s |
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1.5 |
µ s |
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IH |
Holding current |
Tj = 25oC, ITM = 1A, VD = 12V |
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60* |
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mA |
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Tj = 125˚C, IT = 100A, VR = 50V, |
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t code: W |
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10 |
µ s |
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t |
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Turn-off time |
dV/dt = 200V/µ |
s (Linear to 60% VDRM), |
q |
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q |
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dIR/dt = 30A/µ |
s, Gate open circuit |
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*Typical value. |
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GATE TRIGGER CHARACTERISTICS AND RATINGS |
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Symbol |
Parameter |
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Conditions |
Typ. |
Max. |
Units |
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V |
GT |
Gate trigger voltage |
V |
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= 12V, T |
= 25oC, R |
L |
= 6Ω |
- |
3.0 |
V |
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DRM |
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case |
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I |
GT |
Gate trigger current |
V |
DRM |
= 12V, T |
= 25oC, R |
L |
= 6Ω |
- |
200 |
mA |
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case |
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V |
GD |
Gate non-trigger voltage |
At V |
DRM |
T |
case |
= 125oC, R |
L |
= 1kΩ |
- |
0.2 |
V |
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VRGM |
Peak reverse gate voltage |
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5.0 |
V |
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IFGM |
Peak forward gate current |
Anode positive with respect to cathode |
- |
4 |
A |
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PGM |
Peak gate power |
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16 |
W |
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PG(AV) |
Mean gate power |
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3.0 |
W |
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3/13
www.dynexsemi.com
DK13..FW
CURVES
Fig.2 Maximum (limit) on-state characteristics |
Fig.3 Gate characteristics |
Fig.4 Typical recovered charge (for a device rated VDRM = 600V, tq = 10 s)
4/13
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