DYNEX DF68545, DF68544, DF68543, DF68542, DF68541 Datasheet
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DF685
DF685
Fast Recovery Diode
Replaces March 1998 version, DS4303-1.3 |
DS4303-2.0 January 2000 |
APPLICATIONS
■ Snubber Diode For GTO Applications
FEATURES
■Double Side Cooling
■High Surge Capability
■Low Recovery Charge
VOLTAGE RATINGS
Type Number |
Repetitive Peak |
Conditions |
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Reverse Voltage |
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VRRM |
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V |
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DF685 45 |
4500 |
VRSM = VRRM + 100V |
DF685 44 |
4400 |
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DF685 43 |
4300 |
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DF685 42 |
4200 |
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DF685 41 |
4100 |
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DF685 40 |
4000 |
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Lower voltage grades available.
KEY PARAMETERS
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VRRM |
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4500V |
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IF(AV) |
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445A |
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IFSM |
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4500A |
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Qr |
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650μC |
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trr |
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5μs |
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Outline type code: M779b.
See Package Details for further information.
CURRENT RATINGS
Symbol |
Parameter |
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Conditions |
Max. |
Units |
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Double Side Cooled |
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I |
Mean forward current |
Half wave resistive load, T |
case |
= 65oC |
445 |
A |
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F(AV) |
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I |
RMS value |
T |
case |
= 65oC |
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700 |
A |
F(RMS) |
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I |
Continuous (direct) forward current |
T |
case |
= 65oC |
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610 |
A |
F |
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Single Side Cooled (Anode side) |
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IF(AV) |
Mean forward current |
Half wave resistive load, Tcase = 65oC |
280 |
A |
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I |
RMS value |
T |
case |
= 65oC |
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440 |
A |
F(RMS) |
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I |
Continuous (direct) forward current |
T |
case |
= 65oC |
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365 |
A |
F |
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1/8
DF685
SURGE RATINGS
Symbol |
Parameter |
Conditions |
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Max. |
Units |
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IFSM |
Surge (non-repetitive) forward current |
10ms half sine; with 0% VRRM, Tj = 150oC |
4.5 |
kA |
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I2t |
I2t for fusing |
101.25x103 |
A2s |
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IFSM |
Surge (non-repetitive) forward current |
10ms half sine; with 50% VRRM, Tj = 150oC |
3.6 |
kA |
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I2t |
I2t for fusing |
64.8x103 |
A2s |
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IFSM |
Surge (non-repetitive) forward current |
10ms half sine; with 100% V |
T |
= 150oC |
- |
kA |
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I2t |
I2t for fusing |
RRM, |
j |
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A2s |
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THERMAL AND MECHANICAL DATA
Symbol |
Parameter |
Conditions |
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Min. |
Max. |
Units |
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Double side cooled |
dc |
- |
0.045 |
oC/W |
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R |
Thermal resistance - junction to case |
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Anode dc |
- |
0.086 |
oC/W |
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th(j-c) |
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Single side cooled |
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Cathode dc |
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0.095 |
oC/W |
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Clamping force 10kN |
Double side |
- |
0.01 |
oC/W |
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Rth(c-h) |
Thermal resistance - case to heatsink |
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with mounting compound |
Single side |
- |
0.02 |
oC/W |
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Tvj |
Virtual junction temperature |
On-state (conducting) |
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150 |
oC |
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Tstg |
Storage temperature range |
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-55 |
150 |
oC |
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Clamping force |
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9.0 |
11.0 |
kN |
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CHARACTERISTICS
Symbol |
Parameter |
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Conditions |
Typ. |
Max. |
Units |
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VFM |
Forward voltage |
At 1500A peak, Tcase = 25oC |
- |
4.8 |
V |
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I |
Peak reverse current |
At V |
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case |
= 150oC |
- |
80 |
mA |
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RRM |
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RRM |
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trr |
Reverse recovery time |
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5 |
- |
μs |
QRA1 |
Recovered charge (50% chord) |
IF = 1000A, diRR/dt = 100A/μs |
- |
650 |
μC |
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IRM |
Reverse recovery current |
Tcase = 150oC, VR = 100V |
270 |
- |
A |
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K |
Soft factor |
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1.8 |
- |
- |
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VTO |
Threshold voltage |
At Tvj = 150oC |
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2.0 |
V |
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r |
Slope resistance |
At T |
vj |
= 150oC |
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1.76 |
mΩ |
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T |
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V |
Forward recovery voltage |
di/dt = 1000A/μs, T |
= 125oC |
- |
220 |
V |
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FRM |
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j |
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2/8
DF685
DEFINITION OF K FACTOR AND QRA1
QRA1 = 0.5x IRR(t1 + t2)
dIR/dt |
t2 |
k = t1/t2 |
t1 |
τ |
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0.5x IRR |
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IRR |
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CURVES
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3000 |
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2500 |
- (A) |
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F |
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I |
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currentforward |
2000 |
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Instantaneous |
1500 |
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1000
500
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Measured under pulse conditions
Tj = 150˚C
Tj = 25˚C
2.0 4.0 6.0 8.0
Instantaneous forward voltage VF - (V)
Fig. 1 Maximum (limit) forward characteristics
3/8
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