DYNEX DCR1660Y65, DCR1660Y64, DCR1660Y63, DCR1660Y62, DCR1660Y61 Datasheet

DCR1660Y

DCR1660Y

Phase Control Thyristor

Target Information

DS5499-1.2 February 2002

	FEATURES	KEY PARAMETERS
	■ Double Side Cooling	VDRM		6500V
	■ High Surge Capability	IT(AV)		1665A
		ITSM	(max)	28000A
	■ Low Inductance Internal Construction	dV/dt		1000V/ s
		dI/dt		300A/ s

APPLICATIONS

■High Power Converters

■DC Motor Control

■High Voltage Power Supplies

VOLTAGE RATINGS
Part and Ordering	Repetitive Peak	Conditions
Number	Voltages
	VDRM and VDRM
	V
DCR1660Y65	6500	Tvj = 0˚ to 125˚C,
DCR1660Y64	6400	IDRM = IRRM = 150mA,
DCR1660Y63	6300	VDRM, VRRM tp = 10ms,	Outline type code: Y
DCR1660Y62	6200	VDSM & VRSM =
DCR1660Y61	6100	VDRM & VRRM + 100V
DCR1660Y60	6000	respectively	(See Package Details for further information)
Lower voltage grades available.			Fig. 1 Package outline

ORDERING INFORMATION

When ordering, select the required part number shown in the

Voltage Ratings selection table.

For example:

DCR1660Y63

Note: Please use the complete part number when ordering and quote this number in any future correspondance relating to your order.

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DCR1660Y

CURRENT RATINGS

Tcase = 60˚C unless stated otherwise.

Symbol	Parameter	Test Conditions	Max.	Units
Double Side Cooled
IT(AV)	Mean on-state current	Half wave resistive load	1665	A
IT(RMS)	RMS value	-	2600	A
IT	Continuous (direct) on-state current	-	2478	A
Single Side Cooled
IT(AV)	Mean on-state current	Half wave resistive load	1112	A
IT(RMS)	RMS value	-	1746	A
IT	Continuous (direct) on-state current	-	1556	A
Tcase = 80˚C unless stated otherwise.
Symbol	Parameter	Test Conditions	Max.	Units
Double Side Cooled
IT(AV)	Mean on-state current	Half wave resistive load	1323	A
IT(RMS)	RMS value	-	2077	A
IT	Continuous (direct) on-state current	-	1944	A
Single Side Cooled
IT(AV)	Mean on-state current	Half wave resistive load	876	A
IT(RMS)	RMS value	-	1376	A
IT	Continuous (direct) on-state current	-	1196	A

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DCR1660Y

SURGE RATINGS

Symbol	Parameter			Test Conditions		Max.	Units
ITSM	Surge (non-repetitive) on-state current	10ms half sine, Tcase = 125˚C				22.0	kA
I2t	I2t for fusing	V	R	= 50% V - 1/4 sine		2.4 x 106	A2s
				RRM
ITSM	Surge (non-repetitive) on-state current	10ms half sine, Tcase = 125˚C				28.0	kA
I2t	I2t for fusing			VR = 0		3.92 x 106	A2s

DYNAMIC CHARACTERISTICS

Symbol	Parameter	Test Conditions		Min.	Max.	Units
IRRM/IRRM	Peak reverse and off-state current	At VRRM/VDRM, Tcase = 125˚C		-	300	mA
dV/dt	Max. linear rate of rise of off-state voltage	To 67% VDRM, Tj = 125˚C		-	1000	V/µ	s
dI/dt	Rate of rise of on-state current	From 67% VDRM,	Repetitive 50Hz	-	150	A/µ	s
		Gate source 30V, 15Ω ,
			Non-repetitive	-	300	A/µ	s
		tr ≤ 0.5µ s, Tj = 125˚C
VT(TO)	Threshold voltage	At Tvj = 125˚C		-	1.2	V
rT	On-state slope resistance	At Tvj = 125˚C		-	0.61	mΩ
tgd	Delay time	VD = 67% VDRM, gate source 30V, 15Ω		0.5	1.5	µ s
		tr = 0.5µ s, Tj = 25˚C
tq	Turn-off time	IT = 1000A, tp = 1ms, Tj =125˚C,		1500	-	µ s
		VR = 100V, dIRR/dt = 10A/µ s,
		VDR = 67% VDRM,
		dVDR/dt = 25V/µ s linear
IL	Latching current	Tj = 25˚C, VD = 10V		-	600	mA
IH	Holding current	Tj = 25˚C, VG–K = ∞		-	200	mA

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