SBL830
DIODES SBL830, SBL835, SBL840, SBL845, SBL850 Datasheet
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Features
Schottky Barrier Chip
·
Guard Ring for Transient Protection
·
Low Power Loss, High Efficiency
·
High Current Capability, Low V
·
High Surge Capability
·
For Use in Low Voltage, High Frequency
·
Inverters, Free Wheeling, and Polarity
Protection Applications
Plastic Material: UL Flammability
·
Classification Rating 94V-0
Mechanical Data
Case: Molded Plastic
·
Terminals: Plated Leads, Solderable per
·
MIL-STD-202, Method 208
Polarity: See Diagram
·
· Weight: 2.3 grams (approx.)
· Mounting Position: Any
· Marking: Type Number
SBL830 - SBL860
8.0A SCHOTTKY BARRIER RECTIFIER
F
C
K
Pin 1 Pin 2
J
B
D
E
R
Pin 1
Pin 2
L
M
A
G
N
P
Case
TO-220AC
Dim Min Max
14.22 15.88
A
9.65 10.67
B
2.54 3.43
C
5.84 6.86
D
E
G
J
K
L
M
N
P
R
All Dimensions in mm
¾ 6.35
12.70 14.73
0.51 1.14
3.53Æ 4.09Æ
3.56 4.83
1.14 1.40
0.30 0.64
2.03 2.92
4.83 5.33
Maximum Ratings and Electrical Characteristics
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
Characteristic Symbol
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
RMS Reverse Voltage
Average Rectified Output Current
(Note 1) @ T
Non-Repetitive Peak Forward Surge Current 8.3ms
single half sine-wave superimposed on rated load
(JEDEC Method)
Forward Voltage @ IF= 8A, TC= 25°C
Peak Reverse Current @TC= 25°C
at Rated DC Blocking Voltage @ T
Typical Junction Capacitance (Note 2)
Typical Thermal Resistance Junction to Case (Note 1)
Operating and Storage Temperature Range
Notes: 1. Thermal resistance junction to case mounted on heatsink.
2. Measured at 1.0MHz and Applied Reverse Voltage of 4.0V DC.
= 95°C
C
= 100°C
C
V
V
V
R(RMS)
I
V
I
R
T
j,TSTG
RRM
RWM
V
R
I
O
FSM
FM
RM
C
qJC
j
@ TA= 25°C unless otherwise specified
SBL
830
30 35 40 45 50 60 V
21 24.5 28 31.5 35 42 V
SBL
835
SBL
840
0.55 0.70 V
-65 to +150 °C
SBL
845
8A
200 A
0.5
50
700 pF
6.9 °C/W
SBL
850
SBL
860
Unit
mA
DS23044 Rev. C-2 1 of 2 SBL830-SBL860
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