ST STTH30L06C User Manual
®
TURBO 2 ULTRAFAST HIGH VOLTAGE RECTIFIER
Table 1: Main Product Characteristics
I
F(AV)
V
RRM
T
j
VF (typ)
(max)
t
rr
Up to 2 x 20 A
600 V
175°C
0.95 V
55 ns
STTH30L06C
A1
K
A2
FEATURES AND BENEFITS
■ Ultrafast switching
■ Low reverse current
■ Low thermal resistance
■ Reduces switching & conduction losses
K
A1
TO-220AB
STTH30L06CT
K
TO-247
STTH30L06CW
A1
K
A2
DESCRIPTION
The STTH30L06, which is using ST Turbo 2 600V
technology, is specially suited for use in switching
power supplies, and industrial applications, as
rectification and discontinuous mode PFC boost
diode.
D2PA K
STTH30L06CG
A2
A1
Table 2: Order Codes
Part Number Marking
STTH30L06CT STTH30L06CT
STTH30L06CW STTH30L06CW
Part Number Marking
STTH30L06CG STTH30L06CG
STTH30L06GG-TR STTH30L06CG
Table 3: Absolute Ratings (limiting values, per diode)
Symbol Parameter Value Unit
V
RRM
I
F(RMS)
I
F(AV)
I
FSM
T
T
Repetitive peak reverse voltage 600 V
RMS forward voltage 30 A
Average forward current
δ = 0.5
Tc = 140°C
Tc = 125°C
Tc = 120°C
Tc = 110°C
Per diode
Per device
Per diode
Per device
Surge non repetitive forward current tp = 10ms sinusoidal 130 A
Storage temperature range -65 to + 175 °C
stg
Maximum operating junction temperature 175 °C
j
15
30
20
40
A2
A
September 2004 REV. 1
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STTH30L06C
Table 4: Thermal Resistance
Symbol Parameter Value (max). Unit
R
th(j-c)
R
th(c)
When the diodes 1 and 2 are used simultaneously:
∆ Tj(diode 1) = P(diode 1) x R
Table 5: Static Electrical Characteristics (per diode)
Symbol Parameter Test conditions Min. Typ Max. Unit
IR * Reverse leakage current Tj = 25°C VR = V
VF ** Forward voltage drop Tj = 25°C IF = 15A 1.55 V
Pulse test: * tp = 5 ms, δ < 2%
To evaluate the conduction losses use the following equation: P = 0.94 x I
Table 6: Dynamic Characteristics (per diode)
Junction to case Per diode 1.7 °C/W
Total 1.15
Coupling 0.6 °C/W
(Per diode) + P(diode 2) x R
th(j-c)
th(c)
RRM
15 µA
Tj = 150°C 40 400
Tj = 150°C 0.95 1.2
Tj = 25°C IF = 30A 1.76
Tj = 150°C 1.15 1.45
** tp = 380 µs,
δ < 2%
F(AV)
+ 0.017 I
F2(RMS)
Symbol Parameter Test conditions Min. Typ Max. Unit
V
I
RM
t
t
Reverse recovery
rr
time
Reverse recovery
current
Forward recovery
fr
time
Forward recovery
FP
voltage
Tj = 25°C IF = 0.5A Irr = 0.25A IR =1A 55 ns
IF = 1A dIF/dt = 50 A/µs VR =30V 60 85
Tj = 125°C IF = 15A VR = 400V
8.5 12 A
dIF/dt = 100 A/µs
Tj = 25°C IF = 15A dIF/dt = 100 A/µs
VFR = 1.1 x V
Fmax
Tj = 25°C IF = 15A dIF/dt = 100 A/µs
VFR = 1.1 x V
Fmax
300 ns
3.0 V
2/8
STTH30L06C
Figure 1: Conduction losses versus average
forward current (per diode)
P(W)
24
22
20
18
16
14
12
10
8
6
4
2
0
02468101214161820
δ = 0.05
δ = 0.1
δ = 0.2
I (A)
F(AV)
δ = 0.5
δ
=tp/T
δ = 1
T
tp
Figure 3: Relative variation of thermal
impedance junction to case versus pulse
duration
Z/R
th(j-c) th(j-c)
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
Single pulse
0.1
0.0
1.E-03 1.E-02 1.E-01 1.E+00
t (s)
p
δ
=tp/T
T
tp
Figure 2: Forward voltage drop versus forward
current (per diode)
I (A)
FM
100
T =150°C
90
80
70
60
50
40
30
20
10
0
0.0 0.5 1.0 1.5 2.0 2.5 3.0
(maximum values)
T =150°C
j
(typical values)
j
T =25°C
j
(maximum values)
V (V)
FM
Figure 4: Peak reverse recovery current versus
dIF/dt (typical values, per diode)
I (A)
RM
35
V =400V
R
T =125°C
j
30
25
20
15
10
5
0
0 50 100 150 200 250 300 350 400 450 500
I =0.5 x I
FF(AV)
I=I
dI /dt(A/µs)
F
FF(AV)
I =2 x I
FF(AV)
Figure 5: Reverse recovery time versus dIF/dt
(typical values, per diode)
t (ns)
rr
800
700
600
I =2 x I
500
400
300
200
100
0
FF(AV)
I=I
FF(AV)
0 50 100 150 200 250 300 350 400 450 500
I =0.5 x I
F F(AV)
dI /dt(A/µs)
F
V =400V
R
T =125°C
j
Figure 6: Reverse recovery charges versus
dIF/dt (typical values, per diode)
Q (nC)
rr
1800
V =400V
R
T =125°C
j
1600
1400
1200
1000
800
600
400
200
0
0 100 200 300 400 500
I =2 x I
FF(AV)
I=I
FF(AV)
I =0.5 x I
FF(AV)
dI /dt(A/µs)
F
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