Datasheet STTH2R02 Datasheet (ST)

Main product characteristics

STTH2R02

Ultrafast recovery diode

I

F(AV)

V

RRM

T

(max) 175° C

j

(typ) 0.7 V

V

F

(typ) 15 ns

t

rr

2 A

200 V

Features and benefits

■ Very low conduction losses

■ Negligible switching losses

■ Low forward and reverse recovery times

■ High junction temperature

Description

The STTH2R02 uses ST's new 200 V planar Pt
doping technology, and it is specially suited for
switching mode base drive and transistor circuits.

Packaged in DO-15, SMA, and SMB, this device
is intended for use in low voltage, high frequency
inverters, free wheeling and polarity protection.

K

K

SMA

STTH2R02A

STTH2R02Q

A

KA

A

DO-15

A

K

SMB

STTH2R02U

Order codes

Part Number Marking

STTH2R02Q STTH2R02

STTH2R02QRL STTH2R02

STTH2R02A R2A

STTH2R02U R2U

October 2006 Rev 2 1/9

www.st.com

Characteristics STTH2R02

1 Characteristics

Table 1. Absolute ratings (limiting values at T

= 25° C, unless otherwise specified)

j

Symbol Parameter Value Unit

V

I

RRM

FRM

Repetitive peak reverse voltage 200 V

(1)

Repetitive peak forward current

DO-15

tp = 5 µs, F = 5 kHz

60 A

SMA, SMB

DO-15

I

F(RMS)

I

F(AV)

I

FSM

T

1. On infinite heatsink with 10 mm lead length

Table 2. Thermal parameters

RMS forward current

SMA, SMB

Average forward current, δ = 0.5

DO-15 T

SMA, SMB T

= 90° C

lead

= 90° C

c

Surge non repetitive forward current tp = 10 ms Sinusoidal 75 A

Storage temperature range -65 to + 175 ° C

stg

Maximum operating junction temperature 175 ° C

T

j

60 A

2A

Symbol Parameter Value Unit

Junction to lead Lead Length = 10 mm on infinite heatsink DO-15 45

R

th(j-c)

Junction to case SMA, SMB 30

° C/W

Table 3. Static electrical characteristics

Symbol Parameter Test conditions Min. Typ Max. Unit

(1)

I

R

V

1. Pulse test: tp = 5 ms, δ < 2 %

2. Pulse test: t

Reverse leakage current

(2)

Forward voltage drop

F

= 380 µs, δ < 2 %

p

= 25° C

j

= 125° C 2 20

T

j

= 25° C IF = 6 A 1.20

T

j

T

= 25° C

j

Tj = 100° C 0.76 0.85

= 150° C 0.70 0.80

T

j

V

R

= 2 A

I

F

= V

RRM

0.89 1.0

3

T

To evaluate the conduction losses use the following equation:
P = 0.68 x I

F(AV)

+ 0.06 I

F2(RMS)

µA

V

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STTH2R02 Characteristics

Table 4. Dynamic characteristics

Symbol Parameter

t

rr

I

RM

t

fr

V

FP

Reverse recovery time

Reverse recovery current

Forward recovery time

Forward recovery voltage

Test conditions

I

= 1 A, dIF/dt = -50 A/µs,

F

VR = 30 V, Tj = 25° C

= 1 A, dIF/dt = -100 A/µs,

I

F

= 30 V, Tj = 25° C

V

R

= 2 A, dIF/dt = -200 A/µs,

I

F

VR = 160 V, Tj = 125° C

I

= 2 A, dIF/dt = 100 A/µs

F

VFR = 1.1 x V

, Tj = 25° C

Fmax

IF = 2 A, dIF/dt = 100 A/µs,

= 25° C

T

j

Min. Typ Max. Unit

23 30

15 20

34 A

40 ns

2.0 V

Figure 1. Peak current versus duty cycle Figure 2. Forward voltage drop versus

forward current (typical values)

100

IM(A)

T

T

I

I

M

M

80

60

d

δ

=tp/T

=tp/T

tp

tp

IFM(A)

50

40

30

ns

40

20

P = 5 WP = 5 W

P = 2 WP = 2 W

P = 1 WP = 1 W

δ

0

0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0

Figure 3. Forward voltage drop versus

forward current (maximum values)

IFM(A)

50

40

30

20

10

0

0.0 0.5 1.0 1.5 2.0 2.5

Tj=150°C

Tj=25°C

VFM(V)

20

10

0

0.0 0.5 1.0 1.5 2.0 2.5

Tj=150°C

Tj=25°C

VFM(V)

Figure 4. Relative variation of thermal

impedance junction to case versus
pulse duration (SMA)

Z

th(j-a)/Rth(j-a)

1.0

SMA

S

=1cm²

0.9

cu

0.8

0.7

0.6

0.5

0.4

0.3

0.2

Single pulse

0.1

0.0

1.E-02 1.E-01 1.E+00 1.E+01 1.E+02 1.E+03

tP(s)

3/9

Characteristics STTH2R02

Figure 5. Relative variation of thermal

impedance junction to case versus
pulse duration (SMB)

Z

th(j-a)/Rth(j-a)

1.0

SMB

S

=1cm²

0.9

cu

0.8

0.7

0.6

0.5

0.4

0.3

0.2

Single pulse

0.1

0.0

1.E-03 1.E-02 1.E-01 1.E+00 1.E+01 1.E+02 1.E+03

tP(s)

Figure 7. Junction capacitance versus

reverse applied voltage (typical
values)

C(pF)

100

10

V

osc

F=1MHz

=30mV

Tj=25°C

Figure 6. Relative variation of thermal

impedance junction to case versus
pulse duration (DO-15)

Z

th(j-a)/Rth(j-a)

1.0

DO-15

Lleads=10mm

0.9

0.8

0.7

0.6

0.5

0.4

0.3

0.2

0.1

Single pulse

0.0

1.E-03 1.E-02 1.E-01 1.E+00 1.E+01 1.E+02 1.E+03

tP(s)

Figure 8. Reverse recovery charges versus

dI

/dt (typical values)

F

QRR(nC)

60

RMS

IF=2A

V

=160V

R

50

40

30

Tj=125°C

1

1 10 100 1000

VR(V)

Figure 9. Reverse recovery time versus dIF/dt

(typical values)

tRR(ns)

60

50

40

30

20

10

0

10 100 1000

Tj=125°C

Tj=25°C

IF=2A

VR=160V

dIF/dt(A/µs)

20

10

0

10 100 1000

Tj=25°C

dIF/dt(A/µs)

Figure 10. Peak reverse recovery current

versus dI

IRM(A)

6

IF=2A

V

=160V

R

5

4

3

2

1

0

10 100 1000

/dt (typical values)

F

Tj=125°C

Tj=25°C

dIF/dt(A/µs)

4/9

STTH2R02 Ordering information scheme

Figure 11. Dynamic parameters versus

junction temperature

QRR;IRM[Tj]/QRR;IRM[Tj=125°C]

1.4

IF=2A

=160V

V

R

1.2

1.0

I

0.8

0.6

0.4

0.2

0.0

25 50 75 100 125 150

L

RM

Q

RR

Tj(°C)

Figure 13. Thermal resistance, junction to

ambient, versus copper surface
under each lead DO-15
(epoxy FR4, e

R

(°C/W)

th(j-a)

100

90

80

70

60

50

40

30

20

10

0

0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0

= 35 µm)

cu

DO-15

SCU(cm²)

Figure 12. Thermal resistance, junction to

ambient, versus copper surface
under each lead - SMA/SMB
(epoxy FR4, e

R

(°C/W)

th(j-a)

120

100

SMA

80

SMB

60

40

20

0

0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0

= 35 µm)

cu

SCU(cm²)

2 Ordering information scheme

STTH 2 R 02 XXX

Ultrafast switching diode

Average forward current

2 = 2 A

Model R

Repetitive peak reverse voltage

02 = 200 V

Packag e

Q = DO-15 in Ammopack
QRL = DO-15 in Tape and reel
A = SMA in Tape and reel
U = SMB in Tape and reel

5/9

Package information STTH2R02

3 Package information

Epoxy meets UL94, V0

Table 5. DO-15 Dimensions

CC

D

Table 6. SMA dimensions

A

B

REF.

Millimeters Inches

Min. Max. Min. Max.

A 6.05 6.75 0.238 0.266

B 2.95 3.53 0.116 0.139

C 26 31 1.024 1.220

D 0.71 0.88 0.028 0.035

DIMENSIONS

DIMENSIONS

Figure 14. SMA footprint (dimensions in mm)

1.73 1.48 1.73

REF.

Millimeters Inches

Min. Max. Min. Max.

A1 1.90 2.03 0.075 0.080

A2 0.05 0.20 0.002 0.008

b 1.25 1.65 0.049 0.065

c 0.15 0.41 0.006 0.016

E 4.80 5.60 0.189 0.220

E1 3.95 4.60 0.156 0.181

D 2.25 2.95 0.089 0.116

L 0.75 1.60 0.030 0.063

1.67

6/9

4.94

STTH2R02 Package information

Table 7. SMB dimensions

DIMENSIONS

E1

REF.

Millimeters Inches

Min. Max. Min. Max.

D

E

A1

c

L

A2

b

A1 1.90 2.15 2.45 0.075 0.085 0.096

A2 0.05 0.15 0.20 0.002 0.006 0.008

E1 4.05 4.30 4.60 0.159 0.169 0.181

Figure 15. SMB footprint (dimensions in mm)

5.25

b 1.95 2.20 0.077 0.087

c 0.15 0.41 0.006 0.016

E 5.10 5.40 5.60 0.201 0.213 0.220

D 3.30 3.60 3.95 0.130 0.142 0.156

L 0.75 1.15 1.60 0.030 0.045 0.063

2.22

1.751.751.75

In order to meet environmental requirements, ST offers these devices in ECOPACK®
packages. These packages have a lead-free second level interconnect. The category of
second level interconnect is marked on the package and on the inner box label, in
compliance with JEDEC Standard JESD97. The maximum ratings related to soldering
conditions are also marked on the inner box label. ECOPACK is an ST trademark.
ECOPACK specifications are available at: www.st.com.

7/9

Ordering information STTH2R02

4 Ordering information

Part Number Marking Package Weight Base qty Delivery mode

STTH2R02Q STTH2R02 DO-15 0.4 g 1000 Ammopack

STTH2R02QRL STTH2R02 DO-15 0.4 g 6000 Tape and reel

STTH2R02A R2A SMA 0.068 g 5000 Tape and reel

STTH2R02U R2U SMB 0.12 g 2500 Tape and reel

5 Revision history

Date Revision Description of Changes

03-May-2006 1 First issue

13-Oct-2006 2 Maximum Tj set to 175° C for all packages in Table 1.

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STTH2R02

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