Surge non repetitive forward current tp = 10 ms Sinusoidal330A
Storage temperature range-65 to +175 ° C
stg
T
Maximum operating junction temperature175° C
j
TOP3I
Per device Tc = 125° C
Per diode T
Per device T
= 120° C
c
= 105° C
c
60
30
60
SymbolParameterValueUnit
Per diode1.2
TO-247
Total0.8
R
th(j-c)
Junction to case
TOP3I
Per diode1.8
° C/W
Total1.20
TO-2470.4
R
th(c)
Coupling
TOP3I0.6
A
When the two diodes 1 and 2 are used simultaneously:
∆Tj(diode 1) = P (diode 1) X R
2/9
(Per diode) + P (diode 2) x R
th(j-c)
th(c)
Page 3
STTH6002CCharacteristics
Table 3.Static electrical characteristics
SymbolParameterTest conditionsTypMax.Unit
(1)
I
R
V
F
Reverse leakage current
(2)
Forward voltage drop
1. Pulse test: tp = 5 ms, δ < 2 %
2. Pulse test: t
= 380 µs, δ < 2 %
p
= 25° C
T
j
Tj = 125° C30300
= 25° C
T
j
V
= V
R
RRM
I
= 30 A1.05
F
I
= 60 A1.18
F
IF = 30 A0.750.84
Tj = 150° C
I
= 60 A
F
0.90.99
30
To evaluate the conduction losses use the following equation:
P = 0.69 x I
Table 4.Dynamic characteristics
SymbolParameter
t
rr
I
RM
t
fr
V
FP
Reverse recovery time
Reverse recovery current
Forward recovery time
Forward recovery voltage
Figure 1.Peak current versus duty cycle
(per diode)
IM(A)
200
180
160
140
120
100
80
60
40
20
0
0.00.10.20.30.40.50.60.70.80.91.0
P = 20WP = 20 W
P = 10WP = 10 W
F(AV)
+ 0.005 I
I
I
P = 5WP = 5 W
F2(RMS)
M
M
=tp/T
=tp/T
d
δ
Test conditions
= 1 A, dIF/dt = 200 A/µs,
I
F
= 30 V, Tj = 25 °C
V
R
IF = 30 A, dIF/dt = 200 A/µs,
V
= 160 V, Tj = 125 °C
R
= 30 A, dIF/dt = 200 A/µs
I
F
= 1.1 x V
V
FR
Fmax
IF = 30 A, dIF/dt = 200 A/µs,
T
= 25 °C
j
Figure 2.Forward voltage drop versus
IFM(A)
T
T
tp
tp
δ
300
250
200
150
100
50
0
0.00.20.40.60.81.01.21.41.61.82.0
TypMa x.U nit
, Tj = 25 °C
forward current (per diode)
Tj=150°C
(typ values)
Tj=150°C
(max values)
2227ns
7.69.5A
220ns
2.5V
Tj=25°C
(max values)
VFM(V)
µA
V
3/9
Page 4
CharacteristicsSTTH6002C
Figure 3.Relative variation of thermal
impedance junction to case versus
pulse duration
Z
th(j-c)/Rth(j-c)
1.0
Single pulse
0.1
1.E-031.E-021.E-011.E+00
tp(s)
Figure 5.Reverse recovery charges
versus dI
QRR(nC)
350
IF= 30 A
V
=160V
R
300
250
200
150
100
50
0
101001000
/dt (typical values)
F
Tj=125 °C
Tj=25 °C
dIF/dt(A/µs)
Figure 4.Junction capacitance versus
reverse applied voltage (typical
values)
C(pF)
1000
100
1101001000
V
F=1MHz
=30mV
osc
Tj=25°C
RMS
VR(V)
Figure 6.Reverse recovery time versus dI
(typical values)
tRR(ns)
100
90
80
70
60
50
40
30
20
10
0
101001000
Tj=125 °C
Tj=25 °C
IF= 30A
=160V
V
R
dIF/dt(A/µs)
F
/dt
Figure 7.Peak reverse recovery current
versus dI
IRM(A)
16
IF= 30A
V
=160V
R
14
12
10
8
6
4
2
0
101001000
4/9
/dt (typical values)
F
Tj=125 °C
Tj=25 °C
dIF/dt(A/µs)
Figure 8.Dynamic parameters versus
junction temperature
QRR;IRM[Tj]/QRR;IRM[Tj=125°C]
1.4
IF=30A
V
=160V
R
1.2
1.0
I
0.8
0.6
0.4
0.2
0.0
255075100125150
RM
Q
RR
Tj(°C)
Page 5
STTH6002COrdering information scheme
2 Ordering information scheme
STTH 60 02 Cxx
Ultrafast switching diode
Average forward current
60 = 60 A
Repetitive peak reverse voltage
02 = 200 V
Package
CW = TO-247
CPI = TOP3I
5/9
Page 6
Package informationSTTH6002C
3 Package information
Epoxy meets UL94, V0
Cooling method: by conduction (C)
Recommended torque value: 0.8 Nm
Maximum torque value: 1.0 Nm
Table 5.TO-247 Dimensions
DIMENSIONS
REF.
MillimetersInches
Min. Typ Max.Min. TypMax.
A4.855.150.1910.203
D2.202.600.0860.102
V
V
Dia.
E0.400.800.0150.031
F1.001.400.0390.055
F13.000.118
H
A
F22.000.078
F32.002.400.0780.094
L5
L
L4L2
F2
F1
F(x3)
V2
G
= =
L1
F3
L3
F4
D
ME
F43.003.400.1180.133
G10.900.429
H15.4515.75 0.6080.620
L19.8520.15 0.7810.793
L13.704.300.1450.169
L218.500.728
L314.2014.80 0.5590.582
L434.601.362
L55.500.216
6/9
M2.003.000.0780.118
V5°5°
V260°60°
Dia.3.553.650.1390.143
Page 7
STTH6002CPackage information
Table 6.TOP3I dimensions
DIMENSIONS
REF
H
R
ØL
K
G
F
A
A4.44.60.1730.181
B
B1.451.550.0570.061
C14.3515.600.5650.614
D0.50.70.0200.028
MillimetersInches
Min.Max.Min.Max.
E2.72.90.1060.114
F15.816.50.6220.650
P
C
G20.421.10.8150.831
H15.115.50.5940.610
J5.45.650.2130.222
JJ
D
E
K3.43.650.1340.144
ØL4.084.170.1610.164
P1.201.400.0470.055
R4.60 Typ.0.181 Typ.
In order to meet environmental requirements, ST offers these devices in ECOPACK®
packages. These packages have a lead-free second level interconnect. The category of
second level interconnect is marked on the package and on the inner box label, in
compliance with JEDEC Standard JESD97. The maximum ratings related to soldering
conditions are also marked on the inner box label. ECOPACK is an ST trademark.
ECOPACK specifications are available at: www.st.com.
7/9
Page 8
Ordering informationSTTH6002C
4 Ordering information
Part NumberMarkingPackageWeightBase qtyDelivery mode
STTH6002CWSTTH6002CTO-2474.46 g30Tube
STTH6002CPISTTH6002CTOP3I4.7 g30Tube
5 Revision history
DateRevisionDescription of Changes
Feb-20041First issue
05-Apr-20062Reformatted to current template. Package TOP3I added.
8/9
Page 9
STTH6002C
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