Datasheet STTH312 Datasheet (ST)

STTH312

Ultrafast recovery - 1200 V diode

Main product characteristics

I

F(AV)

V

RRM

T

j

V

(typ) 1.15 V

F

(typ) 55 ns

t

rr

3 A

1200 V

175° C

Features and benefits

■ Ultrafast, soft recovery

■ Very low conduction and switching losses

■ High frequency and/or high pulsed current

operation

■ High reverse voltage capability

■ High junction temperature

Description

The high quality design of this diode has
produced a device with low leakage current,
regularly reproducible characteristics and intrinsic
ruggedness. These characteristics make it ideal
for heavy duty applications that demand long term
reliability.

Such demanding applications include industrial
power supplies, motor control, and similar
mission-critical systems that require rectification
and freewheeling. These diodes also fit into
auxiliary functions such as snubber, bootstrap,
and demagnetization applications.

KA

K

A

NC

DPAK

STTH312B

Order codes

Part Number Marking

STTH312B STTH312B

STTH312B-TR STTH312B

The improved performance in low leakage
current, and therefore thermal runaway guard
band, is an immediate competitive advantage for
this device.

March 2006 Rev 1 1/8

www.st.com

8

Characteristics STTH312

1 Characteristics

Table 1. Absolute ratings (limiting values at 25° C, unless otherwise specified)

Symbol Parameter Value Unit

V

RRM

I

F(RMS)

I

F(AV)

I

FRM

I

FSM

T

Table 2. Thermal parameter

Repetitive peak reverse voltage 1200 V

RMS forward current 6 A

Average forward current, δ = 0.5 Tc = 150° C 3 A

Repetitive peak forward current tp = 5 µs, F = 5 kHz square 35 A

Surge non repetitive forward current tp = 10 ms Sinusoidal 35 A

Storage temperature range -65 to + 175 °C

stg

T

Maximum operating junction temperature 175 °C

j

Symbol Parameter Value Unit

R

th(j-c)

Table 3. Static electrical characteristics

Junction to case 3.8 °C/W

Symbol Parameter Test conditions Min. Typ Max. Unit

T

= 25° C

(1)

I

R

Reverse leakage current

j

Tj = 125° C 2 100

= V

V

R

RRM

10

µA

(2)

V

1. Pulse test: tp = 5 ms, δ < 2 %

2. Pulse test: t

Forward voltage drop

F

= 380 µs, δ < 2 %

p

To evaluate the conduction losses use the following equation: P = 1.4 x I

= 25° C

T

j

I

= 3 A

F

2

Tj = 150° C 1.15 1.65

+ 0.1 I

F(AV)

VTj = 125° C 1.20 1.7

F2(RMS)

2/8

STTH312 Characteristics

Table 4. Dynamic characteristics

Symbol Parameter

t

Reverse recovery time

rr

I

Reverse recovery current

RM

S Softness factor

Forward recovery time

t

fr

V

Forward recovery voltage

FP

Figure 1. Conduction losses versus

average current

P(W)

7

δ = 0.2

6

5

4

3

2

1

0

0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5

δ = 0.05

δ = 0.1

I (A)

F(AV)

δ = 0.5

δ

=tp/T

Figure 3. Relative variation of thermal

impedance junction to case
versus pulse duration

Z/R

th(j-c) th(j-c)

1.0

0.9

0.8

0.7

0.6

0.5

0.4

Single pulse

0.3

0.2

0.1

0.0

1.E-03 1.E-02 1.E-01 1.E+00

t (s)

p

Test conditions

IF = 1 A, dIF/dt = -50 A/µs,
V

= 30 V, Tj = 25° C

R

= 1 A, dIF/dt = -100 A/µs,

I

F

= 30 V, Tj = 25° C

V

R

= 3 A, dIF/dt = -200 A/µs,

I

F

= 600 V, Tj = 125° C

V

R

= 3 A, dIF/dt = -200 A/µs,

I

F

V

= 600 V, Tj = 125° C

R

= 3 A dIF/dt = 50 A/µs

I

F

= 1.5 x V

V

FR

I

= 3 A, dIF/dt = 50 A/µs,

F

T

= 25° C

j

, Tj = 25° C

Fmax

Figure 2. Forward voltage drop versus

I (A)

FM

50

45

40

δ = 1

T

tp

35

30

25

20

15

10

5

0

0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0

Figure 4. Peak reverse recovery current

I (A)

RM

24

V =600V

R

22

T=125°C

j

20

18

16

14

12

I =0.5 x I

10

F F(AV)

8

6

4

2

0

0 50 100 150 200 250 300 350 400 450 500

Min. Typ Max. Unit

forward current

T=150°C

j

(maximum values)

T=150°C

j

(typical values)

versus dI

/dt (typical values)

F

I=I

FF(AV)

dI /dt(A/µs)

F

55 80

9.5 14 A

2

12 V

T=25°C

j

(maximum values)

V (V)

FM

I =2 x I

FF(AV)

115

ns

350 ns

3/8

Characteristics STTH312

Figure 5. Reverse recovery time versus

dI

/dt (typical values)

F

t (ns)

rr

400

350

I =2 x I

300

250

200

150

100

50

0

0 50 100 150 200 250 300 350 400 450 500

FF(AV)

I=I

FF(AV)

dI /dt(A/µs)

F

I =0.5 x I

FF(AV)

V =600V

R

T=125°C

j

Figure 7. Softness factor versus

dI

/dt (typical values)

F

S factor

3.5

3.0

2.5

2.0

1.5

1.0

dI /dt(A/µs)

0.5

0 50 100 150 200 250 300 350 400 450 500

F

I 2xI

≤

FF(AV)

V =600V

R

T=125°C

j

Figure 9. Transient peak forward voltage

versus dI

V (V)

FP

60

I=I

FF(AV)

55

T=125°C

j

50

45

40

35

30

25

20

15

10

5

0

0 25 50 75 100 125 150 175 200 225 250 275 300

/dt (typical values)

F

dI /dt(A/µs)

F

Figure 6. Reverse recovery charges versus

dIF/dt (typical values)

Q (nC)

rr

1200

V =600V

R

T=125°C

j

1000

800

600

400

200

0

0 50 100 150 200 250 300 350 400 450 500

I =2 x I

F F(AV)

I=I

FF(AV)

I =0.5 x I

FF(AV)

dI /dt(A/µs)

F

Figure 8. Relative variations of dynamic

parameters versus junction
temperature

2.50

2.25

2.00

1.75

1.50

1.25

1.00

0.75

0.50

0.25

0.00

25 50 75 100 125

S factor

t

rr

I

RM

Q

RR

T (°C)

j

Figure 10. Forward recovery time versus dI

I=I

FF(AV)

V =600V

R

Reference:T =125°C

j

F

(typical values)

t (ns)

fr

700

600

500

400

300

200

100

0

0 100 200 300 400 500

dI /dt(A/µs)

F

I=I

F F(AV)

V =1.5 x V max.

FR F

T=125°C

j

/dt

4/8

STTH312 Characteristics

Figure 11. Junction capacitance versus

reverse voltage applied (typical
values)

C(pF)

100

10

V (V)

1

1 10 100 1000

R

F=1MHz

V =30mV

OSC RMS

T=25°C

j

Figure 12. Thermal resistance junction to

ambient versus copper surface
under tab (printed circuit board
FR4, e

R (°C/W)

th(j-a)

100

90

80

70

60

50

40

30

20

10

0

0 5 10 15 20 25 30 35 40

= 35 µm)

cu

S (cm²)

CU

5/8

Package mechanical data STTH312

2 Package mechanical data

Epoxy meets UL94, V0

Cooling method: by conduction (C)

Table 5. DPAK dimensions

DIMENSIONS

REF.

Millimeters Inches

Min. Max Min. Max.

E

B2

L2

A

C2

A 2.20 2.40 0.086 0.094

A1 0.90 1.10 0.035 0.043

A2 0.03 0.23 0.001 0.009

B 0.64 0.90 0.025 0.035

D

H

L4

B

G

R

A1

R

C

B2 5.20 5.40 0.204 0.212

C 0.45 0.60 0.017 0.023

C2 0.48 0.60 0.018 0.023

D 6.00 6.20 0.236 0.244

E 6.40 6.60 0.251 0.259

G 4.40 4.60 0.173 0.181

H 9.35 10.10 0.368 0.397

L2 0.80 typ. 0.031 typ.

0.60 MIN.

A2

V2

L4 0.60 1.00 0.023 0.039

V2 0° 8° 0° 8°

Figure 13. DPAK footprint (dimensions in mm)

6.7 3 3

6.7

In order to meet environmental requirements, ST offers these devices in ECOPACK®
packages. These packages have a Lead-free second level interconnect . The category of
second level interconnect is marked on the package and on the inner box label, in
compliance with JEDEC Standard JESD97. The maximum ratings related to soldering
conditions are also marked on the inner box label. ECOPACK is an ST trademark.
ECOPACK specifications are available at: www.st.com.

6/8

1.6

2.3

2.3

1.6

STTH312 Ordering information

3 Ordering information

Part Number Marking Package Weight Base qty Delivery mode

STTH312B STTH312B DPAK 0.30 g 75 Tube

STTH312B-TR STTH312B DPAK 0.30 g 2500 Tape & reel

4 Revision history

Date Revision Description of Changes

02-Mar-2006 1 First issue.

7/8

STTH312

Please Read Carefully:

Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the
right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any
time, without notice.

All ST products are sold pursuant to ST’s terms and conditions of sale.

Purchasers are solely responsible for the choice, selection and use of the ST products and services described herein, and ST assumes no
liability whatsoever relating to the choice, selection or use of the ST products and services described herein.

No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted under this document. If any part of this
document refers to any third party products or services it shall not be deemed a license grant by ST for the use of such third party products
or services, or any intellectual property contained therein or considered as a warranty covering the use in any manner whatsoever of such
third party products or services or any intellectual property contained therein.

UNLESS OTHERWISE SET FORTH IN ST’S TERMS AND CONDITIONS OF SALE ST DISCLAIMS ANY EXPRESS OR IMPLIED
WARRANTY WITH RESPECT TO THE USE AND/OR SALE OF ST PRODUCTS INCLUDING WITHOUT LIMITATION IMPLIED
WARRANTIES OF MERCHANTABILITY, FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS
OF ANY JURISDICTION), OR INFRINGEMENT OF ANY PATENT, COPYRIGHT OR OTHER INTELLECTUAL PROPERTY RIGHT.

UNLESS EXPRESSLY APPROVED IN WRITING BY AN AUTHORIZE REPRESENTATIVE OF ST, ST PRODUCTS ARE NOT DESIGNED,
AUTHORIZED OR WARRANTED FOR USE IN MILITARY, AIR CRAFT, SPACE, LIFE SAVING, OR LIFE SUSTAINING APPLICATIONS,
NOR IN PRODUCTS OR SYSTEMS, WHERE FAILURE OR MALFUNCTION MAY RESULT IN PERSONAL INJURY, DEATH, OR
SEVERE PROPERTY OR ENVIRONMENTAL DAMAGE.

Resale of ST products with provisions different from the statements and/or technical features set forth in this document shall immediately void
any warranty granted by ST for the ST product or service described herein and shall not create or extend in any manner whatsoever, any
liability of ST.

ST and the ST logo are trademarks or registered trademarks of ST in various countries.

Information in this document supersedes and replaces all information previously supplied.

The ST logo is a registered trademark of STMicroelectronics. All other names are the property of their respective owners.

© 2006 STMicroelectronics - All rights reserved

STMicroelectronics group of companies

Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan -

Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America

www.st.com

8/8