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®
TURBO 2 ULTRAFAST HIGH VOLTAGE RECTIFIER
Table 1: Main Product Characteristics
I
F(AV)
V
RRM
T
j
VF (typ)
(max)
t
rr
Up to 2 x 40 A
600 V
175°C
1.0 V
65 ns
STTH60L06C
A1
K
A2
FEATURES AND BENEFITS
■ Ultrafast switching
■ Low reverse current
■ Low thermal resistance
■ Reduces switching & conduction losses
TO-247
STTH60L06CW
A1
A2
K
DESCRIPTION
The STTH60L06, which is using ST Turbo 2 600V
technology, is specially suited for use in switching
power supplies, and industrial applications, as
rectification and discontinuous mode PFC boost
diode.
Table 2: Order Codes
Part Number Marking
STTH60L06CW STTH60L06CW
Table 3: Absolute Ratings (limiting values, per diode)
Symbol Parameter Value Unit
V
RRM
I
F(RMS)
I
F(AV)
I
FSM
T
T
Repetitive peak reverse voltage 600 V
RMS forward voltage 60 A
Average forward current
δ = 0.5
Tc = 125°C
Tc = 110°C
Tc = 100°C
Tc = 80°C
Per diode
Per device
Per diode
Per device
Surge non repetitive forward current tp = 10ms sinusoidal 210 A
Storage temperature range -65 to + 175 °C
stg
Maximum operating junction temperature 175 °C
j
30
60
40
80
A
September 2004 REV. 1
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STTH60L06C
Table 4: Thermal Resistance
Symbol Parameter Value (max). Unit
R
th(j-c)
R
th(c)
When the diodes 1 and 2 are used simultaneously:
∆ Tj(diode 1) = P(diode 1) x R
Table 5: Static Electrical Characteristics (per diode)
Symbol Parameter Test conditions Min. Typ Max. Unit
IR * Reverse leakage current Tj = 25°C VR = V
VF ** Forward voltage drop Tj = 25°C IF = 30A 1.55 V
Pulse test: * tp = 5 ms, δ < 2%
To evaluate the conduction losses use the following equation: P = 0.95 x I
Table 6: Dynamic Characteristics (per diode)
Junction to case Per diode 1.05 °C/W
Total 0.68
Coupling 0.3 °C/W
(Per diode) + P(diode 2) x R
th(j-c)
th(c)
RRM
25 µA
Tj = 150°C 80 800
Tj = 150°C 1.0 1.25
Tj = 25°C IF =60A 1.78
Tj = 150°C 1.24 1.55
** tp = 380 µs,
δ < 2%
F(AV)
+ 0.010 I
F2(RMS)
Symbol Parameter Test conditions Min. Typ Max. Unit
V
I
RM
t
t
Reverse recovery
rr
time
Reverse recovery
current
Forward recovery
fr
time
Forward recovery
FP
voltage
Tj = 25°C IF = 0.5A Irr = 0.25A IR =1A 65 ns
IF = 1A dIF/dt = 50 A/µs VR =30V 65 90
Tj = 125°C IF = 30A VR = 400V
11.5 16 A
dIF/dt = 100 A/µs
Tj = 25°C IF = 30A dIF/dt = 100 A/µs
VFR = 1.1 x V
Fmax
Tj = 25°C IF = 30A dIF/dt = 100 A/µs
VFR = 1.1 x V
Fmax
500 ns
2.5 V
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STTH60L06C
Figure 1: Conduction losses versus average
forward current (per diode)
P(W)
80
70
60
50
40
30
20
10
0
0 1020304050
δ = 0.1
δ = 0.05
δ = 0.2
I (A)
F(AV)
δ = 0.5
δ
=tp/T
δ = 1
T
tp
Figure 3: Relative variation of thermal
impedance junction to case versus pulse
duration
Z/R
th(j-c) th(j-c)
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
Single pulse
0.1
0.0
1.E-03 1.E-02 1.E-01 1.E+00
t (s)
p
δ
=tp/T
T
tp
Figure 2: Forward voltage drop versus forward
current (per diode)
I (A)
FM
100
90
80
70
60
50
40
30
20
10
0
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2
(typical values)
T =150°C
j
T =150°C
j
(maximum values)
V (V)
FM
T =25°C
j
(maximum values)
Figure 4: Peak reverse recovery current versus
dIF/dt (typical values, per diode)
I (A)
RM
45
V =400V
R
T =125°C
j
40
35
30
25
20
15
10
5
0
0 50 100 150 200 250 300 350 400 450 500
I =0.5 x I
F F(AV)
I=I
dI /dt(A/µs)
F
FF(AV)
I =2 x I
FF(AV)
Figure 5: Reverse recovery time versus dIF/dt
(typical values, per diode)
t (ns)
rr
800
700
600
I =2 x I
500
400
300
200
100
0
0 50 100 150 200 250 300 350 400 450 500
FF(AV)
I=I
FF(AV)
dI /dt(A/µs)
F
I =0.5 x I
FF(AV)
V =400V
R
T =125°C
j
Figure 6: Reverse recovery charges versus
dIF/dt (typical values, per diode)
Q (nC)
rr
3500
V =400V
R
T =125°C
j
3000
2500
2000
1500
1000
500
0
0 100 200 300 400 500
I =2 x I
FF(AV)
I=I
FF(AV)
I =0.5 x I
FF(AV)
dI /dt(A/µs)
F
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STTH60L06C
Figure 7: Reverse recovery softness factor
versus dIF/dt (typical values, per diode)
S factor
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
0 50 100 150 200 250 300 350 400 450 500
dI /dt(A/µs)
F
I< 2 xI
FF(AV)
V =400V
R
T =125°C
j
Figure 9: Transient peak forward voltage
versus dIF/dt (typical values, per diode)
V (V)
FP
10
I=I
FF(AV)
9
T =125°C
j
8
7
6
5
4
3
2
1
0
0 50 100 150 200 250 300 350 400 450 500
dI /dt(A/µs)
F
Figure 8: Relative variations of dynamic
parameters versus junction temperature
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
25 50 75 100 125
Q
RR
t
rr
S factor
I=I
FF(AV)
V =400V
R
Reference:T =125°C
I
RM
T (°C)
j
j
Figure 10: Forward recovery time versus dIF/dt
(typical values, per diode)
t (ns)
fr
450
400
350
300
250
200
150
100
50
0
0 100 200 300 400 500
dI /dt(A/µs)
F
I=I
FF(AV)
V =1.1 x V max.
FR F
T =125°C
j
Figure 11: Junction capacitance versus
reverse voltage applied (typical values, per
diode)
C(pF)
1000
100
V (V)
10
1 10 100 1000
R
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F=1MHz
V =30mV
OSC RMS
T =25°C
j
Page 5
Figure 12: TO-247 Package Mechanical Data
V
V
H
L5
L
F1
V2
F(x3)
= =
F4
G
Dia.
A
L4L2
F2
L1
F3
L3
D
ME
STTH60L06C
DIMENSIONS
REF.
A 4.85 5.15 0.191 0.203
D 2.20 2.60 0.086 0.102
E 0.40 0.80 0.015 0.031
F 1.00 1.40 0.039 0.055
F1 3.00 0.118
F2 2.00 0.078
F3 2.00 2.40 0.078 0.094
F4 3.00 3.40 0.118 0.133
G 10.90 0.429
H 15.45 15.75 0.608 0.620
L 19.85 20.15 0.781 0.793
L1 3.70 4.30 0.145 0.169
L2 18.50 0.728
L3 14.20 14.80 0.559 0.582
L4 34.60 1.362
L5 5.50 0.216
M 2.00 3.00 0.078 0.118
V5° 5°
V2 60° 60°
Dia. 3.55 3.65 0.139 0.143
Millimeters Inches
Min. Typ. Max. Min. Typ. Max.
Table 7: Ordering Information
Ordering type Marking Package Weight Base qty Delivery mode
STTH60L06CW STTH60L06CW TO-247 4.46 g 50 Tube
■ Epoxy meets UL94, V0
■ Cooling method: by conduction (C)
■ Recommended torque value: 0.8 m.N.
■ Maximum torque value: 1.0 m.N.
Table 8: Revision History
Date Revision Description of Changes
07-Sep-2004 1 First issue
5/6
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STTH60L06C
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences
of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted
by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject
to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not
authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
The ST logo is a registered trademark of STMicroelectronics.
All other names are the property of their respective owners
© 2004 STMicroelectronics - All rights reserved
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