Datasheet STTH212 Datasheet (ST) [en, no]

STTH212

High voltage ultrafast diode

Main product characteristics

I

F(AV)

V

V

F

t

(max)

rr

RRM

T

j

(typ)

2 A

1200 V

175°C

1.0 V

75 ns

Features and benefits

■ Low forward voltage drop

■ High reliability

■ High surge current capability

■ Soft switching for reduced EMI disturbances

■ Planar technology

Description

The STTH212, which is using ST ultrafast high
voltage planar technology, is specially suited for
free-wheeling, clamping, snubbering,
demagnetization in power supplies and other
power switching applications.

Housed in axial, SMB, and SMC packages, this
diode will reduce the losses in high switching
freqency operations.

DO-201AD

STTH212

SMB

STTH212U

Order codes

Part Number Marking

STTH212 STTH212

STTH212RL STTH212

STTH212U U22

STTH212S S12

KA

SMC

STTH212S

Rev 1

June 2005 1/9

www.st.com

9

1 Electrical characteristics STTH212

1 Electrical characteristics

Table 1. Absolute Ratings (limiting values)

Symbol Parameter Value Unit

V

RRM

V

(RMS)

I

F(AV)

I

F(RMS)

I

FSM

T

Repetitive peak reverse voltage 1200 V

RMS voltage 850 V

= 105°C

DO-201AD

Average forward current
δ = 0.5

SMC

T

l

= 90°C

T

l

Tl = 105°C

RMS forward current DO-201AD, SMB, SMC 10 A

Forward surge current tp = 8.3ms

Storage temperature range -50 to + 175 °C

stg

T

Maximum operating junction temperature 175 °C

j

DO-201AD, SMB, SMC 40 A

2ASMB

Table 2. Thermal parameters

Symbol Parameter Value Unit

L = 10 mm DO-201AD 20

R

th(j-l)

Junction to lead

SMC 20

R

th(j-a)

Junction to ambient L = 10 mm DO-201AD 75 °C/W

Table 3. Static Electrical Characteristics

°C/WSMB 25

Symbol Parameter Test conditions Min. Typ Max. Unit

= 25°C

T

I

Reverse leakage current

R

j

= 125°C

T

j

= V

V

R

RRM

Tj = 25°C

V

Forward voltage drop

F

= 125°C

T

j

T

= 150°C

j

I

F

= 2A

To evaluate the conduction losses use the following equation: P = 1.26 x I

1.07 1.50

1.0 -

F(AV)

10

100

1.75

+ 0.12 I

F2(RMS)

2/9

µA

V

STTH212 1 Electrical characteristics

Table 4. Dynamic Electrical Characteristics

Symbol Parameter Test conditions Min. Typ Max. Unit

t

Reverse recovery

rr

time

Forward recovery

t

fr

time

V

Forward recovery

FP

voltage

Tj = 25°C IF = 1A dIF/dt = -100 A/µs VR =30V

I

= 2A dIF/dt = 50 A/µs

Tj = 25°C

F

VFR = 1.1 x V

Fmax

75 ns

500 ns

30 V

Figure 1. Conduction losses versus average

forward current

P(W)

4.0

3.5

3.0

2.5

2.0

1.5

1.0

0.5

0.0

0.00 0.25 0.50 0.75 1.00 1.25 1.50 1.75 2.00 2.25 2.50

δ = 0.05

δ = 0.1

I (A)

F(AV)

δ = 0.2

δ = 0.5

δ

=tp/T

δ = 1

T

tp

Figure 3. Relative variation of thermal

impedance junction to ambient
versus pulse duration (Epoxy
printed circuit board FR4,
L

Z

th(j-a)/Rth(j-a)

1.0

DO-201AD

0.9

=10mm

L

leads

0.8

0.7

0.6

0.5

0.4

0.3

0.2

0.1

0.0

1.E-01 1.E+00 1.E+01 1.E+02 1.E+03

Leads

= 10mm)

tp(s)

Figure 2. Forward voltage drop versus

forward current

I (A)

FM

50

45

40

35

30

25

20

15

10

5

0

0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5

T=125°C

j

(typical values)

T=125°C

j

(maximum values)

V (V)

FM

T=25°C

j

(maximum values)

Figure 4. Relative variation of thermal

impedance junction to ambient
versus pulse duration (Epoxy
printed circuit board FR4,

S

=1cm2)

CU

Z

th(j-a)/Rth(j-a)

1.0

SMB

0.9

S

=1cm²

Cu

0.8

0.7

0.6

0.5

0.4

0.3

0.2

0.1

0.0

1.E-01 1.E+00 1.E+01 1.E+02 1.E+03

tp(s)

3/9

1 Electrical characteristics STTH212

Figure 5. Relative variation of thermal

impedance junction to ambient
versus pulse duration (Epoxy
printed circuit board FR4,
S

=1cm2)

CU

Z

th(j-a)/Rth(j-a)

1.0

SMC

0.9

=1cm²

S

Cu

0.8

0.7

0.6

0.5

0.4

0.3

0.2

0.1

0.0

1.E-01 1.E+00 1.E+01 1.E+02 1.E+03

tp(s)

Figure 7. Reverse recovery time versus dI

(typical values)

trr(ns)

900

800

700

600

500

IF=2 x I

F(AV)

F(AV)

IF=I

F(AV)IF=IF(AV)

dl /dt(A/µs)

F

400

300

200

IF=0.5 x I

100

0

0 50 100 150 200 250 300 350 400 450 500

VR=600V
Tj=125°C

Figure 6. Reverse recovery current versus

/dt (typical values)

dI

F

I (A)

RM

11

VR=600V

10

T

=125°C

j

9

8

7

6

5

4

3

2

1

0

0 20 40 60 80 100 120 140 160 180 200

/dt

Figure 8. Reverse recovery charges versus

F

Qrr(nC)

1400

VR=600V
T

1200

1000

800

600

400

200

0

0 50 100 150 200 250 300 350 400 450 500

IF=0.5 xI

IF=0.5 xI

dI

/dt (typical values)

F

=125°C

j

IF=I

)

)

F(AV

F(AV

IF=2 x I

F(AV)

IF=I

F(AV)

IF=0.5 x I

dl /dt(A/µs)

F

IF=2 x I

=2 x I

F(AV)IF

F(AV)

F(AV)IF=IF(AV)

dl /dt(A/µs)

F

F(AV)

Figure 9. Softness factor versus dI

F

/dt

(typical values)

S

FACTOR

6.0

IF=I

5.5

5.0

4.5

4.0

3.5

3.0

2.5

2.0

1.5

1.0

0.5

0.0

4/9

F(AV)

VR=600V
T

=125°C

j

dl /dt(A/µs)

F

0 25 50 75 100 125 150 175 200 225 250

Figure 10. Relative variations of dynamic

parameters versus junction
temperature

1.0

0.9

0.8

0.7

0.6

0.5

0.4

0.3

0.2

0.1

0.0

S

FAC TOR

I

RM

Q

RR

IF=I

F(AV)

Tj(°C)

25 50 75 100 125

VR=600V

Reference:T

=125°C

j

STTH212 1 Electrical characteristics

Figure 11. Transient peak forward voltage

versus dI

V (V)

FP

30
28

IF=I

F(AV)

Tj=125°C

26
24
22
20
18
16
14
12
10

8
6
4
2
0

0 102030405060708090100

/dt (typical values)

F

dl /dt(A/µs)

F

Figure 13. Junction capacitance versus

reverse voltage applied (typical
values)

C(pF)

100

10

V (V)

1

1 10 100 1000

R

V

F=1MHz

osc

Tj=25°C

=30mV

RMS

Figure 12. Forward recovery time versus dI

(typical values)

t (ns)

FR

420

400

380

360

340

320

300

280

260

240

220

200

0 20 40 60 80 100

dl /dt(A/µs)

F

IF=I

F(AV)

VFR=1.1 x VFmax.

T

=125°C

j

Figure 14. Thermal resistance versus lead

length

R (°C/W)

th(j-a)

100

90

80

70

60

50

40

30

20

10

0

5 10152025

R

L (mm)

Leads

th(j-a)

R

th(j-l)

DO201-AD

F

/dt

Figure 15. Thermal resistance junction to

ambient versus copper surface
under each lead (Epoxy printed
circuit board FR4, e

R (°C/W)

th(j-a)

80

70

60

50

40

30

20

10

0

012345678910

S (cm )

Cu

2

= 35µm)

CU

DO-201AD

Figure 16. Thermal resistance junction to

ambient versus copper surface
under each lead (Epoxy printed
circuit board FR4, e

R (°C/W)

th(j-a)

110

100

90

80

70

60

50

40

30

20

10

0

0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0

5/9

SMC

SMB

S (cm )

Cu

2

= 35 µm)

cu

2 Package mechanical data STTH212

2 Package mechanical data

Table 5. SMB dimensions

DIMENSIONS

REF.

Millimeters Inches

Min. Max. Min. Max.

A1 1.90 2.45 0.075 0.096

A2 0.05 0.20 0.002 0.008

b 1.95 2.20 0.077 0.087

c 0.15 0.41 0.006 0.016

E 5.10 5.60 0.201 0.220

E1 4.05 4.60 0.159 0.181

D 3.30 3.95 0.130 0.156

L 0.75 1.60 0.030 0.063

Figure 17. SMB references to dimensions

table

E1

D

Figure 18. SMB footprint dimensions

(in millimetres)

2.23

1.64

2.23

E

A1

C

L

A2

b

6/9

2.30

6.10

STTH212 2 Package mechanical data

Table 6. SMC dimensions

DIMENSIONS

REF.

Millimeters Inches

Min. Max. Min. Max.

A1 1.90 2.45 0.075 0.096

A2 0.05 0.20 0.002 0.008

b 2.90 3.2 0.114 0.126

c 0.15 0.41 0.006 0.016

E 7.75 8.15 0.305 0.321

E1 6.60 7.15 0.260 0.281

E2 4.40 4.70 0.173 0.185

D 5.55 6.25 0.218 0.246

L 0.75 1.60 0.030 0.063

Figure 19. SMC references to dimensions

table

E1

D

E

Figure 20. SMC footprint dimensions

(in millimetres)

2.20

4.25

2.20

3.30

A1

C

LE2

A2

b

8.65

Table 7. DO-201AD dimensions

DIMENSIONS

BB

Note 1 Note 1

A

EE

REF.

Millimeters Inches

Min. Max. Min. Max.

ØD

ØC

Note 2

A - 9.5 - 0.37

B 25.4 - 1.00 -

C - 5.3 - 0.21

D - 1.3 - 0.051

E - 1.25 - 0.048

Note: 1 The lead diameter D is not controlled over zone E.

2 The minimum length which must stay straight between the right angles after bending is 15 mm

(0.59 inch).

7/9

3 Ordering information STTH212

3 Ordering information

Part Number Marking Package Weight Base qty Delivery mode

STTH212 STTH212

STTH212RL STTH212 1900 Tape & reel

STTH212U U22 SMB 0.11 g 2500 Tape & reel

STTH212S S12 SMC 0.243 g 2500 Tape & reel

4 Revision history

Date Revision Description of Changes

28-Jun-2005 1 First issue.

DO-201AD 1.12 g

600 Ammopack

8/9

STTH212 4 Revision history

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