Datasheet STTH20002TV Datasheet (ST)

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TURBO 2 ULTRAFAST HIGH VOLTAGE RECTIFIER

MAIN PRODUCT CHARACTERISTICS

F(AV)

RRM

VF (typ)

(typ)

FEATURES AND BENEFITS

■ Suited for SMPS

■ Very Low Forward Losses

■ Low recovery time

■ High surge current capability

■ Insulated:

Insulating voltage=2500V Capacitance = 55pF

Up to 2 x 120 A

200 V

150°C

0.75 V

41 ns

RMS

STTH20002TV

A1 K1

A2 K2

ISOTOP

STTH20002TV1

DESCRIPTION

Dual rectifier suited for welding equipment, high power industrial application. Packaged in Isotop, this device is intended for use in the secondary rectification of the applications.

ABSOLUTE RATINGS (limiting values, per diode)

Symbol Parameter Value Unit

RRM

F(RMS)

F(AV)

FSM

Repetitive peak reverse voltage 200 V

RMS forward voltage 170 A

Average forward current δ = 0.5

Tc = 95°C Per diode 100 A

Tc = 80°C Per diode 120

Surge non repetitive forward current tp = 10ms sinusoidal 1000 A

Storage temperature range -55 to + 150 °C

stg

Maximum operating junction temperature 150 °C

Order Codes

Part Number Marking

STTH20002TV1 STTH20002TV1

July 2004 REV. 2

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STTH20002TV

THERMAL RESISTANCE

Symbol Parameter Maximum Unit

th(j-c)

th(c)

When the diodes 1 and 2 are used simultaneously:

∆ Tj(diode 1) = P(diode 1) x R

STATIC ELECTRICAL CHARACTERISTICS (per diode)

Symbol Parameter Test conditions Min. Typ Max. Unit

IR * Reverse leakage current Tj = 25°C VR = V

VF ** Forward voltage drop Tj = 25°C IF = 100A 1.05 V

Pulse test: * tp = 5 ms, δ < 2%

To evaluate the conduction losses use the following equation: P = 0.65 x I

DYNAMIC CHARACTERISTICS (per diode)

Junction to case Per diode 0.52 °C/W

Total 0.31

Coupling 0.1 °C/W

(Per diode) + P(diode 2) x R

th(j-c)

th(c)

RRM

100 µA

Tj = 125°C 80 800

IF = 200A 1.20

Tj = 150°C IF = 100A 0.75 0.85

IF = 200A 1.05

** tp = 380 µs,

δ < 2%

F(AV)

+ 0.002 I

F2(RMS)

Symbol Parameter Test conditions Min. Typ Max. Unit

Reverse recovery

time

Reverse recovery current

Forward recovery

time

Forward recovery

Tj = 25°C IF = 1A dIF/dt = 200 A/µs

41 50 ns

VR =30V

Tj = 125°C IF = 100A VR = 160V

11.5 15 A

dIF/dt = 200 A/µs

Tj = 25°C IF = 100A dIF/dt = 200 A/µs

= 1.1 x V

Fmax

800 ns

Tj = 25°C IF = 100A dIF/dt = 200 A/µs 2.5 V

voltage

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STTH20002TV

Fig. 1: Peak current versus duty cycle (per diode). Fig. 2-1: Forward voltage drop versus forward

current (typical values, per diode).

I (A)

600

500

400

300

200

100

0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0

P = 80W

P = 120W

=tp/T

P = 160W

I (A)

200

180

160

140

120

100

0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2

T =150°C

V (V)

T =25°C

Fig. 2-2: Forward voltage drop versus forward current (maximum values, per diode).

I (A)

200

180

160

140

120

100

0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4

T =150°C

V (V)

T =25°C

Fig. 4: Junction capacitance versus reverse voltage applied (typical values, per diode).

C(pF)

10000

1000

V (V)

100

1 10 100 1000

F=1MHz

V =30mV

OSC RMS

T =25°C

Fig. 3: Relative variation of thermal impedance junction to case versus pulse duration.

Z/R

th(j-c) th(j-c)

1.0

Single pulse

t (s)

0.1

1.E-03 1.E-02 1.E-01 1.E+00 1.E+01

Fig. 5: Reverse recovery charges versus dIF/dt

(typical values, per diode).

Q (nC)

1000

I =100A

V =160V

900

800

700

600

500

400

300

200

100

10 100 1000

dI /dt(A/µs)

T =125°C

T =25°C

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STTH20002TV

Fig. 6: Reserve recovery time versus dIF/dt

(typical values, per diode).

t (ns)

120

I =100A

V =160V

100

10 100 1000

dI /dt(A/µs)

T =125°C

T =25°C

Fig. 8: Dynamic parameters versus junction

temperature.

Q;I ] /

1.4

1.2

1.0

0.8

0.6

0.4

[T Q ; I [T =125°C]

RR RM j RR RM j

I =100A

V =160V

Fig. 7: Peak reverse recovery current versus dIF/dt (typical values, per diode).

I (A)

I =100A

V =160V

10 100 1000

T =125°C

dI /dt(A/µs)

T =25°C

0.2

T (°C)

0.0

25 50 75 100 125 150

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STTH20002TV

PACKAGE MECHANICAL DATA

ISOTOP

REF. DIMENSIONS

Millimeters Inches

Min. Max. Min. Max.

A 11.80 12.20 0.465 0.480

A1 8.90 9.10 0.350 0.358

B 7.8 8.20 0.307 0.323

C 0.75 0.85 0.030 0.033

C2 1.95 2.05 0.077 0.081

D 37.80 38.20 1.488 1.504

D1 31.50 31.70 1.240 1.248

E 25.15 25.50 0.990 1.004 E1 23.85 24.15 0.939 0.951 E2 24.80 typ. 0.976 typ.

G 14.90 15.10 0.587 0.594 G1 12.60 12.80 0.496 0.504 G2 3.50 4.30 0.138 0.169

F 4.10 4.30 0.161 0.169 F1 4.60 5.00 0.181 0.197

P 4.00 4.30 0.157 0.69 P1 4.00 4.40 0.157 0.173

S 30.10 30.30 1.185 1.193

ORDERING INFORMATION

Ordering type Marking Package Weight Base qty

27 g

STTH20002TV1 STTH20002TV1 ISOTOP

(without screws)

■ Epoxy meets UL94, V0

■ Cooling method: by conduction (C)

(with

screws)

Delivery

mode

Tube

REVISION HISTORY

Table 1: Revision history

Date Revision Description of Changes

26-May-2004 1 First issue

13-Jul-2004 2 Figure 6 legend corrected: “Forward” changed to “Reverse”

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