The STTH3R04 series uses ST's new 400 V
planar Pt doping technology. The STTH3R04 is
specially suited for switching mode base drive and
transistor circuits.
Packaged in axial and surface mount packages,
this device is intended for use in low voltage, high
frequency inverters, free wheeling and polarity
protection.
KA
DO-15
STTH3R04Q
Band indicates cathode side.
SMB
STTH3R04U
Table 1.Device summary
I
F(AV)
V
RRM
T
j (max)
V
F (typ)
t
rr (typ)
DO-201AD
STTH3R04
SMC
STTH3R04S
3 A
400 V
175 °C
0.9 V
18 ns
May 2008 Rev 11/10
www.st.com
Page 2
CharacteristicsSTTH3R04
1 Characteristics
Table 2.Absolute ratings (limiting values at 25 °C, unless otherwise specified)
SymbolParameterValueUnit
V
RRM
I
F(AV)
I
FSM
T
1. On infinite heatsink with 10 mm lead length
Table 3.Thermal parameters
SymbolParameterValueUnit
Repetitive peak reverse voltage400V
Average forward current, δ = 0.5
DO-15T
DO-201ADT
SMBT
SMCT
= 70 °C
lead
= 80 °C
lead
= 70 °C
lead
= 100 °C
lead
Surge non repetitive forward current tp = 10 ms Sinusoidal60A
Storage temperature range-65 to +175 °C
stg
Maximum operating junction temperature
T
j
(1)
3.0A
175 °C
R
th(j-l)
Junction to lead
Lead length = 10 mm
on infinite heatsink
DO-1525
DO-201AD22
°C/W
SMB25
R
th(j-l)
Table 4.Static electrical characteristics
Junction to lead
SMC17
SymbolParameterTest conditionsMinTypMaxUnit
(1)
I
V
1. Pulse test: tp = 5 ms, δ < 2 %
2. Pulse test: tp = 380 µs, δ < 2 %
Reverse leakage current
R
(2)
Forward voltage drop
F
= 25 °C
j
= 125 °C550
T
j
T
= 25 °C
j
T
= 150 °C0.91.15
j
= V
V
R
= 3.0 A
I
F
RRM
5
1.5
T
To evaluate the conduction losses use the following equation:
P = 0.9 x I
+ 0.083 x I
F(AV)
F2(RMS)
µA
VTj = 100 °C1.01.25
2/10
Page 3
STTH3R04Characteristics
Table 5.Dynamic characteristics (Tj = 25 °C unless otherwise stated)
SymbolParameter
Test conditions
I
= 1 A, dIF/dt = -50 A/µs,
F
VR = 30 V, Tj = 25 °C
t
I
RM
t
V
Figure 1.Conduction losses versus
P(W)
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
0.00.51.01.52.02.53.03.54.0
Reverse recovery time
rr
Reverse recovery current
Forward recovery time
fr
Forward recovery voltage
FP
average forward current
= 1 A, dIF/dt = -100 A/µs,
I
F
= 30 V, Tj = 25 °C
V
R
= 3.0 A, dIF/dt = -200 A/µs,
I
F
VR = 320 V, Tj = 125 °C
I
= 3.0 A dIF/dt = 100 A/µs
F
VFR = 1.1 x V
= 3.0 A dIF/dt = 100 A/µs
I
F
δ=0.05δ=0.1δ=0.2δ=0.5δ=1
T
=tp/T
I
(A)
F(AV)
δ
, Tj = 25 °C
Fmax
Figure 2.Forward voltage drop versus
forward current
IFM(A)
50
45
40
35
30
25
20
15
10
tp
5
0
0.00.40.81.21.62.02.42.83.2
TJ=150°C
TJ=150°C
(Maximum values)
(Maximum values)
TJ=150°C
TJ=150°C
(Typicalvalues)
(Typical values)
MinTypMaxUnit
35
ns
1825
45.5 A
75ns
2.5V
TJ=25°C
TJ=25°C
(Maximum values)
(Maximum values)
VFM(V)
Figure 3.Relative variation of thermal
impedance junction to lead versus
pulse duration, DO-15 (epoxy FR4,
copper thickness = 35 µm)
Z
th(j-l)/Rth(j-l)
1.0
DO-15
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
=10mm
L
leads
Single pulse
1.E-011.E+001.E+011.E+021.E+03
tP(s)
Figure 4.Relative variation of thermal
impedance junction to ambient
versus pulse duration, DO-201AD
(epoxy FR4, copper
thickness = 35 µm)
Z
th(j-a)/Rth(j-a)
1.0
DO-201AD
=10mm
L
0.9
leads
0.8
0.7
0.6
0.5
0.4
0.3
0.2
Single pulse
0.1
0.0
1.E-011.E+001.E+011.E+021.E+03
tP(s)
3/10
Page 4
CharacteristicsSTTH3R04
Figure 5.Relative variation of thermal
impedance junction to ambient
versus pulse duration, SMB (epoxy
FR4, copper thickness = 35 µm)
Z
th(j-a)/Rth(j-a)
1.0
SMB
=1cm²
S
0.9
Cu
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
Single pulse
0.0
1.E-011.E+001.E+011.E+021.E+03
tP(s)
Figure 7.Junction capacitance versus
reverse voltage applied
(typical values)
C(pF)
100
10
1
1101001000
VR(V)
V
F=1MHz
OSC
Tj=25°C
=30mV
Figure 9.Reverse recovery time versus
dI
/dt (typical values)
F
tRR(ns)
100
90
80
70
60
50
40
30
20
10
0
101001000
Tj=125 °C
Tj=25 °C
dIF/dt(A/µs)
IF= 3 A
V
R
=320 V
Figure 6.Relative variation of thermal
impedance junction to ambient
versus pulse duration, SMC
Z
th(j-a)/Rth(j-a)
1.0
SMC
0.9
=1cm²
S
Cu
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
Single pulse
0.0
1.E-011.E+001.E+011.E+021.E+03
tP(s)
Figure 8.Reverse recovery charges versus
dI
/dt (typical values)
F
QRR(nC)
100
IF= 3 A
90
V
=320 V
RMS
R
80
70
60
50
40
30
20
10
0
101001000
Tj=125 °C
Tj=25 °C
dIF/dt(A/µs)
Figure 10. Peak reverse recovery current
versus dIF/dt (typical values)
IRM(A)
8
IF= 3 A
=320 V
V
R
7
6
5
4
3
2
1
0
101001000
Tj=125 °C
Tj=25 °C
dIF/dt(A/µs)
4/10
Page 5
STTH3R04Characteristics
Figure 11. Relative variations of dynamic
parameters versus junction
Figure 12. Transient peak forward voltage
versus dI
/dt (typical values)
F
temperature
QRR;IRM[Tj]/QRR;IRM[Tj=125°C]
1.4
IF= 3 A
V
=320 V
R
1.2
1.0
I
RM
0.8
Q
0.6
RR
0.4
0.2
0.0
255075100125150
Tj(°C)
Figure 13. Forward recovery time versus
dI
/dt (typical values)
F
tFR(ns)
130
120
110
100
90
80
70
60
50
40
30
20
10
0
050100150 200250300 350400450 500
dIF/dt(A/µs)
T
j
IF=3 A
=125 °C
VFp(V)
25
IF=3 A
T
=125 °C
j
20
15
10
5
0
050100150200250300350400450500
dIF/dt(A/µs)
Figure 14. Thermal resistance versus
lead length, DO-15
R
(°C/W)
th(j-a)
120
100
80
60
40
20
L
(mm)
0
0.00.51.01.52.02.53.03.54.04.55.0
leads
DO-15
Figure 15. Thermal resistance junction to
ambient versus copper surface
under each lead, DO-201AD (epoxy
FR4, copper thickness = 35 µm)
R
(°C/W)
th(j-a)
80
70
60
50
40
30
20
10
0
0.00.51.01.52.02.53.03.54.04.55.0
SCu(cm²)
DO-201AD
Figure 16. Thermal resistance versus lead
length, DO-201AD
Rth(°C/W)
100
90
80
70
60
50
40
30
20
10
0
5 10152025
R
th(j-a)
R
th(j-l)
L
(mm)
leads
5/10
DO-201AD
Page 6
Package informationSTTH3R04
Figure 17. Thermal resistance junction to ambient versus copper surface under
In order to meet environmental requirements, ST offers these devices in ECOPACK
packages. These packages have a lead-free second level interconnect. The category of
second level interconnect is marked on the package and on the inner box label, in
compliance with JEDEC Standard JESD97. The maximum ratings related to soldering
conditions are also marked on the inner box label. ECOPACK is an ST trademark.
ECOPACK specifications are available at www.st.com.
Table 6.DO201AD dimensions
SMB
SCU(cm²)
®
BB
Note 1Note 1
ØD
A
EE
Note 2
ØC
6/10
Dimensions
Ref.
MillimetersInches
Min.Max.Min.Max.
A9.500.374
B25.401.000
C5.300.209
D1.300.051
E1.25 0.049
Notes 1 - The lead diameter ø D is not
controlled over zone E
2 - The minimum length which must stay
straight between the right angles after
bending is 0.59"(15mm)
Page 7
STTH3R04Package information
Table 7.DO-15 dimensions
Dimensions
CC
D
Table 8.SMB dimensions
E1
E
C
A
B
D
L
Ref.
MillimetersInches
Min.Max.Min.Max.
A6.056.750.2380.266
B2.953.530.1160.139
C26311.0241.220
D0.710.880.0280.035
Dimensions
Ref.
MillimetersInches
Min.Max.Min.Max.
A11.902.450.0750.096
A20.050.200.0020.008
b1.952.200.0770.087
c0.150.400.0060.016
A1
A2
b
D3.303.950.1300.156
E5.105.600.2010.220
E14.054.600.1590.181
L0.751.500.0300.059
Figure 18. Footprint, dimensions in mm (inches)
2.60
1.62
(0.064) (0.102)
5.84
(0.300)
1.62
(0.064)
2.18
(0.086)
7/10
Page 8
Package informationSTTH3R04
Table 9.SMC dimensions
Dimensions
Ref.
E1
A11.902.450.0750.096
D
A20.050.200.0020.008
b2.903.200.1140.126
E
c0.150.400.0060.016
D5.556.250.2180.246
A1
C
LE2
A2
b
E7.758.150.3050.321
E16.607.150.2600.281
E24.404.700.1730.185
L0.751.500.0300.059
Figure 19. Footprint, dimensions in mm (inches)
(0.061)(0.201)
MillimetersInches
Min.Max.Min.Max.
1.545.111.54
(0.061)
3.14
(0.124)
8.19
(0.322)
8/10
Page 9
STTH3R04Ordering information
3 Ordering information
Table 10.Ordering information
Order codeMarkingPackageWeightBase qty Delivery mode
STTH3R04STTH3R04DO-201AD1.16 g600Ammopack
STTH3R04RLSTTH3R04DO-201AD1.16g1900Tape and reel
STTH3R04QSTTH3R04QDO-150.4 g1000Ammopack
STTH3R04QRLSTTH3R04QDO-150.4 g6000Tape and reel
STTH3R04SR4SSMC0.243 g2500Tape and reel
STTH3R04U3R4USMB0.12 g2500Tape and reel
4 Revision history
Table 11.Document revision history
DateRevisionDescription of changes
30-May-20081First issue
9/10
Page 10
STTH3R04
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